Manuel Antonio dos Santos Barroso


AuthID: R-000-A0V

Confirmed Publications: 20



11
TITLE: Ab initio modeling of interstitial oxygen in crystalline SiGe alloys  Full Text
AUTHORS: Torres, VJB ; Coutinho, J ; Briddon, PR; Barroso, M ;
PUBLISHED: 2006, SOURCE: 21st International Conference on Amorphous and Nanocrystalline Semiconductors in JOURNAL OF NON-CRYSTALLINE SOLIDS, VOLUME: 352, ISSUE: 9-20
INDEXED IN: Scopus WOS CrossRef: 5
IN MY: ORCID | ResearcherID
12
TITLE: Donor-vacancy complexes in Ge: Cluster and supercell calculations
AUTHORS: Coutinho, J ; Oberg, S; Torres, VJB ; Barroso, M ; Jones, R; Briddon, PR;
PUBLISHED: 2006, SOURCE: PHYSICAL REVIEW B, VOLUME: 73, ISSUE: 23
INDEXED IN: Scopus WOS CrossRef: 51
IN MY: ORCID | ResearcherID
13
TITLE: Early SiO2 precipitates in Si: Vacancy-oxygen versus interstitial-oxygen clusters  Full Text
AUTHORS: Torres, VJB ; Coutinho, J ; Jones, R; Barroso, M ; Oberg, S; Briddon, PR;
PUBLISHED: 2006, SOURCE: 23rd International Conference on Defects in Semiconductors in PHYSICA B-CONDENSED MATTER, VOLUME: 376, ISSUE: 1
INDEXED IN: Scopus WOS CrossRef: 11
IN MY: ORCID | ResearcherID
14
TITLE: Electronic structure and Jahn-Teller instabilities in a single vacancy in Ge  Full Text
AUTHORS: Coutinho, J ; Jones, R; Torres, VJB ; Barroso, M ; Oberg, S; Briddon, PR;
PUBLISHED: 2005, SOURCE: JOURNAL OF PHYSICS-CONDENSED MATTER, VOLUME: 17, ISSUE: 48
INDEXED IN: Scopus WOS CrossRef: 54
IN MY: ORCID | ResearcherID
15
TITLE: Vibrational properties of elemental hydrogen centres in Si, Ge and dilute SiGe alloys  Full Text
AUTHORS: Balsas, A ; Torres, VJB ; Coutinho, J ; Jones, R; Hourahine, B; Briddon, PR; Barroso, M ;
PUBLISHED: 2005, SOURCE: Journal of Physics Condensed Matter, VOLUME: 17, ISSUE: 22
INDEXED IN: Scopus CrossRef
IN MY: ORCID
16
TITLE: Vibrational properties of elemental hydrogen centres in Si, Ge and dilute SiGe alloys  Full Text
AUTHORS: Balsas, A ; Torres, VJB ; Coutinho, J ; Jones, R; Hourahine, B; Briddon, PR; Barroso, M ;
PUBLISHED: 2005, SOURCE: 1st International Workshop on Coordination Action on Defects Relevent to Engineering Silicon-Based Devices in JOURNAL OF PHYSICS-CONDENSED MATTER, VOLUME: 17, ISSUE: 22
INDEXED IN: WOS
IN MY: ResearcherID
17
TITLE: Calculation of deep states in SiGe alloys: Interstitial carbon-oxygen complexes
AUTHORS: Balsas, A ; Coutinho, J ; Torres, VJB ; Briddon, PR; Barroso, M ;
PUBLISHED: 2004, SOURCE: PHYSICAL REVIEW B, VOLUME: 70, ISSUE: 8
INDEXED IN: Scopus WOS CrossRef: 19
IN MY: ORCID | ResearcherID
18
TITLE: Electronic levels of interstitial carbon and carbon-oxygen centers in SiGe alloys  Full Text
AUTHORS: Coutinho, J ; Balsas, A ; Torres, VJB ; Briddom, PR; Barroso, M ;
PUBLISHED: 2004, SOURCE: Symposium on Material Science Issues in Advanced CMOS Source-Drain Engineeing held at the E-MRS 2004 Spring Meeting in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 114, ISSUE: SPEC. ISS.
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID | ResearcherID
19
TITLE: Solid-fluid coexistence of the Lennard-Jones system from absolute free energy calculations  Full Text
AUTHORS: Barroso, MA ; Ferreira, AL ;
PUBLISHED: 2002, SOURCE: JOURNAL OF CHEMICAL PHYSICS, VOLUME: 116, ISSUE: 16
INDEXED IN: Scopus WOS CrossRef: 56
IN MY: ORCID | ResearcherID
20
TITLE: Temperature and density extrapolations in canonical ensemble Monte Carlo simulations
AUTHORS: Ferreira, AL ; Barroso, MA ;
PUBLISHED: 2000, SOURCE: PHYSICAL REVIEW E, VOLUME: 61, ISSUE: 2
INDEXED IN: Scopus WOS CrossRef: 5
IN MY: ORCID | ResearcherID
Page 2 of 2. Total results: 20.

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