Maria do Rosário Pimenta Correia


AuthID: R-000-B8B

Confirmed Publications: 60



51
TITLE: Compositional pulling effects in InxGa1-x/GaN layers: A combined depth-resolved cathodoluminescence and Rutherford backscattering/channeling study
AUTHORS: Pereira, S ; Correia, MR ; Pereira, E; O'Donnell, KP; Trager Cowan, C; Sweeney, F; Alves, E ;
PUBLISHED: 2001, SOURCE: PHYSICAL REVIEW B, VOLUME: 64, ISSUE: 20
INDEXED IN: Scopus WOS CrossRef: 128
IN MY: ORCID | ResearcherID
52
TITLE: Depth resolved studies of indium content and strain in InGaN layers  Full Text
AUTHORS: Pereira, S ; Correia, MR ; Pereira, E; O'Donnell, KP; Trager Cowan, C; Sweeney, F; Alves, E ; Sequeira, AD; Franco, N; Watson, IM;
PUBLISHED: 2001, SOURCE: 4th International Conference on Nitride Semiconductors (ICNS-4) in PHYSICA STATUS SOLIDI B-BASIC RESEARCH, VOLUME: 228, ISSUE: 1
INDEXED IN: Scopus WOS CrossRef: 3
IN MY: ORCID | ResearcherID
53
TITLE: Green, red and infrared Er-related emission in implanted GaN : Er and GaN : Er,O samples  Full Text
AUTHORS: Monteiro, T ; Soares, J; Correia, MR ; Alves, E ;
PUBLISHED: 2001, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 89, ISSUE: 11
INDEXED IN: Scopus WOS CrossRef: 28
IN MY: ORCID | ResearcherID
54
TITLE: Indium content determination related with structural and optical properties of InGaN layers  Full Text
AUTHORS: Pereira, S ; Correia, MR ; Monteiro, T ; Pereira, E; Soares, MR ; Alves, E ;
PUBLISHED: 2001, SOURCE: 4th European Workshop on Gallium Nitride in JOURNAL OF CRYSTAL GROWTH, VOLUME: 230, ISSUE: 3-4
INDEXED IN: Scopus WOS CrossRef: 8
IN MY: ORCID | ResearcherID
55
TITLE: Interpretation of double x-ray diffraction peaks from InGaN layers  Full Text
AUTHORS: Pereira, S ; Correia, MR ; Pereira, E; O'Donnell, KP; Alves, E ; Sequeira, AD; Franco, N;
PUBLISHED: 2001, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 79, ISSUE: 10
INDEXED IN: Scopus WOS CrossRef: 46
IN MY: ORCID | ResearcherID
56
TITLE: Raman spectroscopy studies in InGaN/GaN wurtzite epitaxial films
AUTHORS: Correia, MR ; Pereira, S ; Monteiro, T; Pereira, E; Alves, E ;
PUBLISHED: 2001, SOURCE: GaN and Related Alloys 2000 in Materials Research Society Symposium - Proceedings, VOLUME: 639
INDEXED IN: Scopus
IN MY: ORCID
57
TITLE: Strain and compositional analysis of InGaN/GaN layers
AUTHORS: Pereira, S ; Correia, MR ; Pereira, E; Trager Cowan, C; Sweeney, F; Edwards, PR; O'Donnell, KP; Alves, E ; Sequeira, AD; Franco, N;
PUBLISHED: 2001, SOURCE: GaN and Related Alloys 2000 in Materials Research Society Symposium - Proceedings, VOLUME: 639
INDEXED IN: Scopus
IN MY: ORCID
58
TITLE: Steady-state and time-resolved luminescence in InGaN layers  Full Text
AUTHORS: Seitz, R; Gaspar, C; Correia, M ; Monteiro, T ; Pereira, E; Heuken, M; Schoen, O;
PUBLISHED: 2000, SOURCE: International Conference on Luminescence and Optical Spectroscopy of Condensed Matter in JOURNAL OF LUMINESCENCE, VOLUME: 87-9
INDEXED IN: Scopus WOS CrossRef: 1
IN MY: ORCID
59
TITLE: Distribution of 1.68 eV emission from diamond films  Full Text
AUTHORS: Correia, MR ; Monteiro, I; Pereira, E; Costa, LC ;
PUBLISHED: 1998, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 84, ISSUE: 4
INDEXED IN: Scopus WOS CrossRef: 4
IN MY: ORCID | ResearcherID
60
TITLE: Broad emission band in GaN epitaxial layers grown on 6H-SiC and sapphire  Full Text
AUTHORS: Monteiro, T ; Pereira, E; Correia, MR ; Xavier, C; Hofmann, DM; Meyer, BK; Fischer, S; Cremades, A; Piqueras, J;
PUBLISHED: 1997, SOURCE: 1996 International Conference on luminescence and Optical Spectroscopy of Condensed Matter (ICL 96) in JOURNAL OF LUMINESCENCE, VOLUME: 72-4
INDEXED IN: Scopus WOS CrossRef: 10
IN MY: ORCID | ResearcherID
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