Peter Stallinga


AuthID: R-000-F4C

Confirmed Publications: 40



31
TITLE: Electronic transport in field-effect transistors of sexithiophene  Full Text
AUTHORS: Stallinga, P ; Gomes, HL ; Biscarini, F; Murgia, M; de Leeuw, DM;
PUBLISHED: 2004, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 96, ISSUE: 9
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID
32
TITLE: Tetracene-based organic light-emitting transistors: optoelectronic properties and electron injection mechanism  Full Text
AUTHORS: Santato, C; Capelli, R; Loi, MA; Murgia, M; Cicoira, F; Roy, VAL; Stallinga, P ; Zamboni, R; Rost, C; Karg, SE; Muccini, M;
PUBLISHED: 2004, SOURCE: Symposium on Organic Field-Effect Transistors - Towards Molecular Scale held at the 2004 Annual E-MRS Spring Meeting in SYNTHETIC METALS, VOLUME: 146, ISSUE: 3
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID
33
TITLE: Interface state mapping in a Schottky barrier of the organic semiconductor terrylene  Full Text
AUTHORS: Stallinga, P ; Gomes, HL ; Murgia, M; Mullen, K;
PUBLISHED: 2002, SOURCE: ORGANIC ELECTRONICS, VOLUME: 3, ISSUE: 1
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID
34
TITLE: Electrical characterization of CVD diamond-n(+) silicon junctions  Full Text
AUTHORS: Rodrigues, AM; Gomes, HL ; Stallinga, P ; Pereira, L; Pereira, E;
PUBLISHED: 2001, SOURCE: 11th European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide (Diamond 2000) in DIAMOND AND RELATED MATERIALS, VOLUME: 10, ISSUE: 3-7
INDEXED IN: Scopus WOS CrossRef: 13
IN MY: ORCID
35
TITLE: Electrical characterization of pn-junctions of PPV and silicon  Full Text
AUTHORS: Stallinga, P ; Gomes, HL ; Charas, A ; Morgado, J ; Alcacer, L ;
PUBLISHED: 2001, SOURCE: 16th International Conference on Science and Technology of Synthetic Metals (ICSM 2000) in SYNTHETIC METALS, VOLUME: 121, ISSUE: 1-3
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID
36
TITLE: Minority-carrier effects in poly-phenylenevinylene as studied by electrical characterization  Full Text
AUTHORS: Stallinga, P ; Gomes, HL ; Rost, H; Holmes, AB; Harrison, MG; Friend, RH;
PUBLISHED: 2001, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 89, ISSUE: 3
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID
37
TITLE: Electronic levels in MEH-PPV  Full Text
AUTHORS: Stallinga, P ; Gomes, HL ; Rost, H; Holmes, AB; Harrison, MG; Friend, RH;
PUBLISHED: 2000, SOURCE: 2nd International Conference on Electroluminescene of Molecular Materials and Related Phenomena (ICEL-2) in SYNTHETIC METALS, VOLUME: 111
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID
38
TITLE: Analysis of deep levels in a phenylenevinylene polymer by transient capacitance methods  Full Text
AUTHORS: Gomes, HL ; Stallinga, P ; Rost, H; Holmes, AB; Harrison, MG; Friend, RH;
PUBLISHED: 1999, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 74, ISSUE: 8
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID
39
TITLE: Determination of deep and shallow levels in conjugated polymers by electrical methods  Full Text
AUTHORS: Stallinga, P ; Gomes, HL ; Rost, H; Holmes, AB; Harrison, MG; Friend, RH; Biscarini, F; Taliani, C; Jones, GW; Taylor, DM;
PUBLISHED: 1999, SOURCE: 20th International Conference on Defects in Semiconductors (ICDS-20) in PHYSICA B-CONDENSED MATTER, VOLUME: 273-4
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID
40
TITLE: Electrical study of impurity states in conjugated polymers  Full Text
AUTHORS: Stallinga, P ; Gomes, HL ; Jones, GW; Taylor, DM;
PUBLISHED: 1999, SOURCE: International Conference on Science and Technology of Synthetic Metals (ICSM 98) in SYNTHETIC METALS, VOLUME: 101, ISSUE: 1-3
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID
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