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Rodrigo Ferrao Paiva Martins
AuthID:
R-000-FKV
Publications
Confirmed
To Validate
Document Source:
All
Document Type:
All Document Types
Article (384)
Proceedings Paper (100)
Editorial Material (4)
Correction (2)
Book (1)
Book Chapter (1)
Review (1)
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Cit. WOS Dsc
IF WOS Dsc
Cit. Scopus Dsc
IF Scopus Dsc
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Results:
10
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Confirmed Publications: 493
111
TITLE:
Crystallization of amorphous indium zinc oxide thin films produced by radio-frequency magnetron sputtering
Full Text
AUTHORS:
Goncalves, G;
Barquinha, P
; Raniero, L;
Martins, R
;
Fortunato, E
;
PUBLISHED:
2008
,
SOURCE:
Symposium on Advances in Transparents Electronics held at the European-Materials-Research-Society Meeting
in
THIN SOLID FILMS,
VOLUME:
516,
ISSUE:
7
INDEXED IN:
Scopus
WOS
IN MY:
ORCID
|
ResearcherID
112
TITLE:
Effect of annealing on molybdenum doped indium oxide thin films RF sputtered at room temperature
Full Text
AUTHORS:
Elangovan, E; Marques, A;
Pimentel, A
;
Martins, R
;
Fortunato, E
;
PUBLISHED:
2008
,
SOURCE:
5th Iberian Vacuum Meeting
in
VACUUM,
VOLUME:
82,
ISSUE:
12
INDEXED IN:
Scopus
WOS
CrossRef
IN MY:
ORCID
|
ResearcherID
113
TITLE:
Effect of annealing on the properties of N-doped ZnO films deposited by RF magnetron sputtering
Full Text
AUTHORS:
Jinzhong Z Wang
;
Elangovan Elamurugu
; Vincent Sallet;
Francois Jomard
;
Alain Lusson
;
Ana Botelho B do Rego
;
Pedro Barquinha
;
Goncalo Goncalves
;
Rodrigo Martins
;
Elvira Fortunato
;
PUBLISHED:
2008
,
SOURCE:
APPLIED SURFACE SCIENCE,
VOLUME:
254,
ISSUE:
22
INDEXED IN:
Scopus
WOS
CrossRef
IN MY:
ORCID
|
ResearcherID
114
TITLE:
Effect of annealing on the properties of RF sputtered indium molybdenum oxide thin films
Full Text
AUTHORS:
Elangovan, E;
Martins, R
;
Fortunato, E
;
PUBLISHED:
2008
,
SOURCE:
22nd International Conference on Amorphous and Nanocrystalline Semiconductors
in
JOURNAL OF NON-CRYSTALLINE SOLIDS,
VOLUME:
354,
ISSUE:
19-25
INDEXED IN:
Scopus
WOS
CrossRef
IN MY:
ORCID
|
ResearcherID
115
TITLE:
Effect of post-annealing on the properties of copper oxide thin films obtained from the oxidation of evaporated metallic copper
Full Text
AUTHORS:
Figueiredo, V; Elangovan, E;
Goncalves, G
;
Barquinha, P
;
Pereira, L
;
Franco, N
;
Alves, E
;
Martins, R
;
Fortunato, E
;
PUBLISHED:
2008
,
SOURCE:
APPLIED SURFACE SCIENCE,
VOLUME:
254,
ISSUE:
13
INDEXED IN:
Scopus
WOS
CrossRef
IN MY:
ORCID
|
ResearcherID
116
TITLE:
Electron transport in single and multicomponent n-type oxide semiconductors
Full Text
AUTHORS:
Martins, R
;
Barquinha, P
;
Pimentel, A
;
Pereira, L
;
Fortunato, E
; Kang, D; Song, I; Kim, C; Park, J; Park, Y;
PUBLISHED:
2008
,
SOURCE:
Symposium on Advances in Transparents Electronics held at the European-Materials-Research-Society Meeting
in
THIN SOLID FILMS,
VOLUME:
516,
ISSUE:
7
INDEXED IN:
Scopus
WOS
CrossRef
IN MY:
ORCID
|
ResearcherID
117
TITLE:
Fabrication and characterization of hybrid solar cells based on copper phthalocyanine/porous silicon
Full Text
AUTHORS:
Prabakaran, R;
Fortunato, E
;
Martins, R
;
Ferreira, I
;
PUBLISHED:
2008
,
SOURCE:
22nd International Conference on Amorphous and Nanocrystalline Semiconductors
in
JOURNAL OF NON-CRYSTALLINE SOLIDS,
VOLUME:
354,
ISSUE:
19-25
INDEXED IN:
Scopus
WOS
CrossRef
IN MY:
ORCID
|
ResearcherID
118
TITLE:
Gallium-indium-zinc-oxide-based thin-film transistors: Influence of the source/drain material
AUTHORS:
Pedro Barquinha
; Anna M Vila;
Goncalo Goncalves
;
Rodrigo Martins
;
Joan R Morante
;
Elvira Fortunato
;
Luis Pereira
;
PUBLISHED:
2008
,
SOURCE:
IEEE TRANSACTIONS ON ELECTRON DEVICES,
VOLUME:
55,
ISSUE:
4
INDEXED IN:
Scopus
WOS
CrossRef
IN MY:
ORCID
|
ResearcherID
119
TITLE:
High k dielectrics for low temperature electronics
Full Text
AUTHORS:
Pereira, L
;
Barquinha, P
;
Fortunato, E
;
Martins, R
; Kang, D; Kim, CJ; Lim, H; Song, I; Park, Y;
PUBLISHED:
2008
,
SOURCE:
Symposium on Advances in Transparents Electronics held at the European-Materials-Research-Society Meeting
in
THIN SOLID FILMS,
VOLUME:
516,
ISSUE:
7
INDEXED IN:
Scopus
WOS
CrossRef
IN MY:
ORCID
|
ResearcherID
120
TITLE:
High mobility and low threshold voltage transparent thin film transistors based on amorphous indium zinc oxide semiconductors
Full Text
AUTHORS:
Fortunato, E
;
Barquinha, P
;
Goncalves, G
;
Pereira, L
;
Martins, R
;
PUBLISHED:
2008
,
SOURCE:
3rd International TFT Conference (ITC 07)
in
SOLID-STATE ELECTRONICS,
VOLUME:
52,
ISSUE:
3
INDEXED IN:
Scopus
WOS
CrossRef
IN MY:
ORCID
|
ResearcherID
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