Sérgio Manuel de Sousa Pereira


AuthID: R-000-GF5

Confirmed Publications: 72



61
TITLE: Strain and composition distributions in wurtzite InGaN/GaN layers extracted from x-ray reciprocal space mapping (vol 80, pg 3913, 2002)  Full Text
AUTHORS: Pereira, S ; Correia, MR ; Pereira, E; O'Donnell, KP; Alves, E ; Sequeira, AD; Franco, N; Watson, IM; Deatcher, CJ;
PUBLISHED: 2002, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 81, ISSUE: 18
INDEXED IN: Scopus WOS CrossRef: 8
IN MY: ORCID
62
TITLE: Strain relaxation and compositional analysis of InGaN/GaN layers by Rutherford backscattering  Full Text
AUTHORS: Alves, E ; Pereira, S ; Correia, MR ; Pereira, E; Sequeira, AD; Franco, N;
PUBLISHED: 2002, SOURCE: 15th International Conference on Ion-Beam Analysis (IBA-15) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 190, ISSUE: 1-4
INDEXED IN: Scopus WOS CrossRef: 8
IN MY: ORCID
63
TITLE: Structural and optical properties of InGaN/GaN layers close to the critical layer thickness  Full Text
AUTHORS: Pereira, S ; Correia, MR ; Pereira, E; Trager Cowan, C; Sweeney, F; O'Donnell, KP; Alves, E ; Franco, N; Sequeira, AD;
PUBLISHED: 2002, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 81, ISSUE: 7
INDEXED IN: Scopus WOS CrossRef: 85
IN MY: ORCID
64
TITLE: Compositional dependence of the strain-free optical band gap in InxGa1-xN layers  Full Text
AUTHORS: Pereira, S ; Correia, MR ; Monteiro, T ; Pereira, E; Alves, E ; Sequeira, AD; Franco, N;
PUBLISHED: 2001, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 78, ISSUE: 15
INDEXED IN: Scopus WOS CrossRef: 81
IN MY: ORCID
65
TITLE: Compositional pulling effects in InxGa1-x/GaN layers: A combined depth-resolved cathodoluminescence and Rutherford backscattering/channeling study
AUTHORS: Pereira, S ; Correia, MR ; Pereira, E; O'Donnell, KP; Trager Cowan, C; Sweeney, F; Alves, E ;
PUBLISHED: 2001, SOURCE: PHYSICAL REVIEW B, VOLUME: 64, ISSUE: 20
INDEXED IN: Scopus WOS CrossRef: 128
IN MY: ORCID
66
TITLE: Depth resolved studies of indium content and strain in InGaN layers  Full Text
AUTHORS: Pereira, S ; Correia, MR ; Pereira, E; O'Donnell, KP; Trager Cowan, C; Sweeney, F; Alves, E ; Sequeira, AD; Franco, N; Watson, IM;
PUBLISHED: 2001, SOURCE: 4th International Conference on Nitride Semiconductors (ICNS-4) in PHYSICA STATUS SOLIDI B-BASIC RESEARCH, VOLUME: 228, ISSUE: 1
INDEXED IN: Scopus WOS CrossRef: 3
IN MY: ORCID
67
TITLE: Indium content determination related with structural and optical properties of InGaN layers  Full Text
AUTHORS: Pereira, S ; Correia, MR ; Monteiro, T ; Pereira, E; Soares, MR ; Alves, E ;
PUBLISHED: 2001, SOURCE: 4th European Workshop on Gallium Nitride in JOURNAL OF CRYSTAL GROWTH, VOLUME: 230, ISSUE: 3-4
INDEXED IN: Scopus WOS CrossRef: 8
IN MY: ORCID
68
TITLE: Indium distribution within InxGa1-xN epitaxial layers: A combined resonant Raman scattering and Rutherford backscattering study  Full Text
AUTHORS: Correia, R; Pereira, S ; Pereira, E; Alves, E ; Gleize, J; Frandon, J; Renucci, MA;
PUBLISHED: 2001, SOURCE: 4th International Conference on Nitride Semiconductors (ICNS-4) in PHYSICA STATUS SOLIDI B-BASIC RESEARCH, VOLUME: 228, ISSUE: 1
INDEXED IN: Scopus WOS CrossRef: 1
IN MY: ORCID
69
TITLE: Interpretation of double x-ray diffraction peaks from InGaN layers  Full Text
AUTHORS: Pereira, S ; Correia, MR ; Pereira, E; O'Donnell, KP; Alves, E ; Sequeira, AD; Franco, N;
PUBLISHED: 2001, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 79, ISSUE: 10
INDEXED IN: Scopus WOS CrossRef: 46
IN MY: ORCID
70
TITLE: Raman spectroscopy studies in InGaN/GaN wurtzite epitaxial films
AUTHORS: Correia, MR ; Pereira, S ; Monteiro, T; Pereira, E; Alves, E ;
PUBLISHED: 2001, SOURCE: GaN and Related Alloys 2000 in Materials Research Society Symposium - Proceedings, VOLUME: 639
INDEXED IN: Scopus
IN MY: ORCID
Page 7 of 8. Total results: 72.

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