Teresa Maria Fernandes Rodrigues Cabral Monteiro


AuthID: R-000-H53

Confirmed Publications: 153



141
TITLE: Strain relaxation in GaN films as a function of growth direction and buffer layer measured by Raman spectroscopy  Full Text
AUTHORS: Seitz, R; Monteiro, T ; Pereira, E; Di Forte Poisson, M;
PUBLISHED: 1999, SOURCE: Proceedings of the 1999 3rd International Conference on Nitride Semiconductors (ICNS'99) in Physica Status Solidi (A) Applied Research, VOLUME: 176, ISSUE: 1
INDEXED IN: Scopus CrossRef
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142
TITLE: Time resolved photoluminescence of cubic Mg doped GaN
AUTHORS: Seitz, R; Gaspar, C; Monteiro, T ; Pereira, E; Schoettker, B; Frey, T; As, DJ; Schikora, D; Lischka, K;
PUBLISHED: 1999, SOURCE: Symposium on Wide-Bandgap Semiconductors for High-Power, High-Frequency and High-Temperature Applications-1999 at the 1999 MRS Spring Meeting in WIDE-BANDGAP SEMICONDUCTORS FOR HIGH-POWER, HIGH-FREQUENCY AND HIGH-TEMPERATURE APPLICATIONS-1999, VOLUME: 572
INDEXED IN: Scopus WOS
IN MY: ORCID | ResearcherID
143
TITLE: Time resolved spectroscopy of mid-band-gap emissions in Si-doped GaN  Full Text
AUTHORS: Seitz, R; Gaspar, C; Monteiro, T ; Pereira, E; Leroux, M; Beaumont, B; Gibart, P;
PUBLISHED: 1998, SOURCE: 2nd International Conference on Nitride Semiconductors (ICNS 97) in JOURNAL OF CRYSTAL GROWTH, VOLUME: 189
INDEXED IN: Scopus WOS CrossRef: 7
IN MY: ORCID | ResearcherID
144
TITLE: Blue emission in Mg doped GaN studied by time resolved spectroscopy
AUTHORS: Seitz, R; Gaspar, C; Monteiro, T ; Pereira, E; Leroux, M; Beaumont, B; Gibart, P;
PUBLISHED: 1997, SOURCE: 19th International Conference on Defects in Semiconductors (ICDS-19) in DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3, VOLUME: 258-2, ISSUE: PART 2
INDEXED IN: Scopus WOS
IN MY: ORCID | ResearcherID
145
TITLE: Broad emission band in GaN epitaxial layers grown on 6H-SiC and sapphire  Full Text
AUTHORS: Monteiro, T ; Pereira, E; Correia, MR ; Xavier, C; Hofmann, DM; Meyer, BK; Fischer, S; Cremades, A; Piqueras, J;
PUBLISHED: 1997, SOURCE: 1996 International Conference on luminescence and Optical Spectroscopy of Condensed Matter (ICL 96) in JOURNAL OF LUMINESCENCE, VOLUME: 72-4
INDEXED IN: Scopus WOS CrossRef: 10
IN MY: ORCID | ResearcherID
146
TITLE: Temperature behaviour of the yellow emission in GaN
AUTHORS: Seitz, R; Gaspar, C; Monteiro, T ; Pereira, E; Leroux, M; Beaumont, B; Gibart, P;
PUBLISHED: 1997, SOURCE: MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, VOLUME: 2, ISSUE: 33-41
INDEXED IN: Scopus WOS
IN MY: ORCID | ResearcherID
147
TITLE: Cathodoluminescence study of GaN epitaxial layers  Full Text
AUTHORS: Cremades, A; Piqueras, J; Xavier, C; Monteiro, T ; Pereira, E; Meyer, BK; Hofmann, DM; Fischer, S;
PUBLISHED: 1996, SOURCE: 4th International Workshop on Beam Injection Assessment of Defects in Semiconductors (BIADS 96) in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 42, ISSUE: 1-3
INDEXED IN: Scopus WOS CrossRef: 24
IN MY: ORCID | ResearcherID
148
TITLE: PHOTOLUMINESCENCE STUDIES OF HEAT-TREATED GAP-S SAMPLES
AUTHORS: MONTEIRO, T ; PEREIRA, E; DOMINGUEZADAME, F; PIQUERAS, J;
PUBLISHED: 1993, SOURCE: JOURNAL OF THE ELECTROCHEMICAL SOCIETY, VOLUME: 140, ISSUE: 12
INDEXED IN: Scopus WOS
IN MY: ORCID | ResearcherID
149
TITLE: SPATIAL-DISTRIBUTION OF MN-RELATED EMISSION IN GAP STUDIED BY CATHODOLUMINESCENCE AND PHOTOLUMINESCENCE  Full Text
AUTHORS: PIQUERAS, J; DOMINGUEZADAME, F; MONTEIRO, T ; PEREIRA, E;
PUBLISHED: 1993, SOURCE: MATERIALS CHEMISTRY AND PHYSICS, VOLUME: 35, ISSUE: 2
INDEXED IN: Scopus WOS
IN MY: ORCID | ResearcherID
150
TITLE: LOW-TEMPERATURE BEHAVIOR OF A COMPLEX LUMINESCENCE IN MN-DOPED GAP IN THE REGION OF 1.7-1.8 EV  Full Text
AUTHORS: MONTEIRO, T ; PEREIRA, E;
PUBLISHED: 1992, SOURCE: 8TH INTERNATIONAL CONF ON DYNAMICAL PROCESSES IN EXCITED STATES OF SOLIDS ( DPC 91 ) in JOURNAL OF LUMINESCENCE, VOLUME: 53, ISSUE: 1-6
INDEXED IN: Scopus WOS
IN MY: ORCID | ResearcherID
Page 15 of 16. Total results: 153.

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