Vitor José Babau Torres


AuthID: R-000-HKG

Confirmed Publications: 64



41
TITLE: Local vibrational modes of Zn-H-As defects in GaAs, ZnSe and ZnTe  Full Text
AUTHORS: Torres, VJB ; Coutinho, J ; Briddon, PR;
PUBLISHED: 2005, SOURCE: Spring Meeting of the European-Materials-Research-Society in COMPUTATIONAL MATERIALS SCIENCE, VOLUME: 33, ISSUE: 1-3
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID
42
TITLE: Local vibrations on hydrogen dimers in dilute SiGe crystalline solutions  Full Text
AUTHORS: Coutinho, J ; Torres, VJB ; Pereira, RN ; Jones, R; Oberg, S; Briddon, PR;
PUBLISHED: 2005, SOURCE: Symposium on Materials Science and Device Issues for Futrue Si-Based Technologies held at the 2005 EMRS Meeting in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 124, ISSUE: SUPPL.
INDEXED IN: Scopus WOS CrossRef: 3
IN MY: ORCID
43
TITLE: Metastable VO2 complexes in silicon: experimental and theoretical modeling studies
AUTHORS: Murin, LI; Lindstrom, J; Markevich, VP; Medvedeva, IF; Torres, VJB ; Coutinho, J ; Jones, R; Briddon, PR;
PUBLISHED: 2005, SOURCE: 11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2005) in GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XI, VOLUME: 108-109
INDEXED IN: Scopus WOS
IN MY: ORCID
44
TITLE: Theoretical investigations of the energy levels of defects in germanium
AUTHORS: Jones, R; Carvalho, A; Coutinho, J ; Torres, VJB ; Oberg, S; Briddon, PR;
PUBLISHED: 2005, SOURCE: 11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2005) in GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XI, VOLUME: 108-109
INDEXED IN: Scopus WOS CrossRef: 5
IN MY: ORCID
45
TITLE: Vibrational properties of elemental hydrogen centres in Si, Ge and dilute SiGe alloys  Full Text
AUTHORS: Balsas, A ; Torres, VJB ; Coutinho, J ; Jones, R; Hourahine, B; Briddon, PR; Barroso, M ;
PUBLISHED: 2005, SOURCE: 1st International Workshop on Coordination Action on Defects Relevent to Engineering Silicon-Based Devices in JOURNAL OF PHYSICS-CONDENSED MATTER, VOLUME: 17, ISSUE: 22
INDEXED IN: WOS
46
TITLE: Vibrational properties of elemental hydrogen centres in Si, Ge and dilute SiGe alloys  Full Text
AUTHORS: Balsas, A ; Torres, VJB ; Coutinho, J ; Jones, R; Hourahine, B; Briddon, PR; Barroso, M ;
PUBLISHED: 2005, SOURCE: Journal of Physics Condensed Matter, VOLUME: 17, ISSUE: 22
INDEXED IN: Scopus CrossRef
IN MY: ORCID
47
TITLE: Calculation of deep states in SiGe alloys: Interstitial carbon-oxygen complexes
AUTHORS: Balsas, A ; Coutinho, J ; Torres, VJB ; Briddon, PR; Barroso, M ;
PUBLISHED: 2004, SOURCE: PHYSICAL REVIEW B, VOLUME: 70, ISSUE: 8
INDEXED IN: Scopus WOS CrossRef: 19
IN MY: ORCID
48
TITLE: Electronic levels of interstitial carbon and carbon-oxygen centers in SiGe alloys  Full Text
AUTHORS: Coutinho, J ; Balsas, A ; Torres, VJB ; Briddom, PR; Barroso, M ;
PUBLISHED: 2004, SOURCE: Symposium on Material Science Issues in Advanced CMOS Source-Drain Engineeing held at the E-MRS 2004 Spring Meeting in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 114, ISSUE: SPEC. ISS.
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID
49
TITLE: Structure and properties of vacancy-oxygen complexes in Si1-xGex alloys
AUTHORS: Markevich, VP; Peaker, AR; Coutinho, J ; Jones, R; Torres, VJB ; Oberg, S; Briddon, PR; Murin, LI; Dobaczewski, L; Abrosimov, NV;
PUBLISHED: 2004, SOURCE: PHYSICAL REVIEW B, VOLUME: 69, ISSUE: 12
INDEXED IN: Scopus WOS CrossRef: 31
IN MY: ORCID
50
TITLE: Ab initio modeling of Be-H and Zn-H complexes in Si  Full Text
AUTHORS: Coutinho, J ; Torres, VJB ; Briddon, PR;
PUBLISHED: 2003, SOURCE: 22nd International Conference on Defects in Semiconductors (ICDS-22) in PHYSICA B-CONDENSED MATTER, VOLUME: 340
INDEXED IN: Scopus WOS CrossRef: 2
IN MY: ORCID
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