Rui Nuno Marques Pereira


AuthID: R-000-SVV

Confirmed Publications: 30



11
TITLE: Solution-Processed Networks of Silicon Nanocrystals: The Role of Internanocrystal Medium on Semiconducting Behavior
AUTHORS: Pereira, RN ; Niesar, S; You, WB; da Cunha, AF ; Erhard, N; Stegner, AR; Wiggers, H; G Willinger; Stutzmann, M; Brandt, MS;
PUBLISHED: 2011, SOURCE: JOURNAL OF PHYSICAL CHEMISTRY C, VOLUME: 115, ISSUE: 41
INDEXED IN: Scopus WOS CrossRef: 32
IN MY: ORCID | ResearcherID
12
TITLE: Defect reduction in silicon nanoparticles by low-temperature vacuum annealing  Full Text
AUTHORS: Niesar, S; Stegner, AR; Pereira, RN ; Hoeb, M; Wiggers, H; Brandt, MS; Stutzmann, M;
PUBLISHED: 2010, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 96, ISSUE: 19
INDEXED IN: Scopus WOS CrossRef: 26
IN MY: ORCID | ResearcherID
13
TITLE: Dielectric screening versus quantum confinement of phosphorus donors in silicon nanocrystals investigated by magnetic resonance
AUTHORS: Pereira, RN ; Stegner, AR; Andlauer, T; Klein, K; Wiggers, H; Brandt, MS; Stutzmann, M;
PUBLISHED: 2009, SOURCE: PHYSICAL REVIEW B, VOLUME: 79, ISSUE: 16
INDEXED IN: Scopus WOS CrossRef: 30
IN MY: ORCID | ResearcherID
14
TITLE: Doping efficiency in freestanding silicon nanocrystals from the gas phase: Phosphorus incorporation and defect-induced compensation
AUTHORS: Stegner, AR; Pereira, RN ; Lechner, R; Klein, K; Wiggers, H; Stutzmann, M; Brandt, MS;
PUBLISHED: 2009, SOURCE: PHYSICAL REVIEW B, VOLUME: 80, ISSUE: 16
INDEXED IN: Scopus WOS CrossRef: 86
IN MY: ORCID | ResearcherID
15
TITLE: Effect of Ge doping on the creation of luminescent radiation defects in MBE Si  Full Text
AUTHORS: Ankiewicz, AO; Sobolev, NA; Leitao, JP ; Carmo, MC; Pereira, RN ; Hansen, JL; Larsen, AN;
PUBLISHED: 2006, SOURCE: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 248, ISSUE: 1
INDEXED IN: Scopus WOS CrossRef: 3
IN MY: ORCID | ResearcherID
16
TITLE: Hydrogen self-trapping near silicon atoms in Ge-rich SiGe alloys  Full Text
AUTHORS: Pereira, RN ; Nielsen, BB; Coutinho, J ; Torres, VJB ; Briddon, PR;
PUBLISHED: 2006, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 88, ISSUE: 14
INDEXED IN: Scopus WOS CrossRef: 5
IN MY: ORCID | ResearcherID
17
TITLE: Local modes of hydrogen defects in Si : Ge and Ge : Si  Full Text
AUTHORS: Pereira, RN ; Nielsen, BB; Coutinho, J ;
PUBLISHED: 2006, SOURCE: 23rd International Conference on Defects in Semiconductors in PHYSICA B-CONDENSED MATTER, VOLUME: 376, ISSUE: 1
INDEXED IN: Scopus WOS CrossRef: 1
IN MY: ORCID | ResearcherID
18
TITLE: Theory of anharmonicity on bond-centered hydrogen oscillators in silicon  Full Text
AUTHORS: Coutinho, J ; Torres, VJB ; Pereira, RN ; Nielsen, BB; Jones, R; Briddon, PR;
PUBLISHED: 2006, SOURCE: 23rd International Conference on Defects in Semiconductors in PHYSICA B-CONDENSED MATTER, VOLUME: 376, ISSUE: 1
INDEXED IN: Scopus WOS CrossRef: 1
IN MY: ORCID | ResearcherID
19
TITLE: Anharmonicity and lattice coupling of bond-centered hydrogen and interstitial oxygen defects in monoisotopic silicon crystals
AUTHORS: Pereira, RN ; Nielsen, BB; Coutinho, J ; Torres, VJB ; Jones, R; Ohya, T; Itoh, KM; Briddon, PR;
PUBLISHED: 2005, SOURCE: PHYSICAL REVIEW B, VOLUME: 72, ISSUE: 11
INDEXED IN: Scopus WOS CrossRef: 4
IN MY: ORCID | ResearcherID
20
TITLE: Local vibrations on hydrogen dimers in dilute SiGe crystalline solutions  Full Text
AUTHORS: Coutinho, J ; Torres, VJB ; Pereira, RN ; Jones, R; Oberg, S; Briddon, PR;
PUBLISHED: 2005, SOURCE: Symposium on Materials Science and Device Issues for Futrue Si-Based Technologies held at the 2005 EMRS Meeting in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 124, ISSUE: SUPPL.
INDEXED IN: Scopus WOS CrossRef: 3
IN MY: ORCID | ResearcherID
Page 2 of 3. Total results: 30.

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