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Eduardo Jorge da Costa Alves
AuthID:
R-000-4EK
Publications
Confirmed
To Validate
Document Source:
All
Document Type:
All Document Types
Article (512)
Proceedings Paper (76)
Correction (4)
Review (2)
Editorial Material (2)
Erratum (1)
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Order:
Year Dsc
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Cit. WOS Dsc
IF WOS Dsc
Cit. Scopus Dsc
IF Scopus Dsc
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Results:
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Confirmed Publications: 597
301
TITLE:
Depth profiling of ion-implanted AlInN using time-of-flight secondary ion mass spectrometry and cathodoluminescence
Full Text
AUTHORS:
Martin, RW
; Rading, D; Kersting, R; Tallarek, E; Nogales, E; Amabile, D; Wang, K; Katchkanov, V; Trager Cowan, C; O'Donnell, KP;
Watson, IM
; Matias, V; Vantomme, A;
Lorenz, K
;
Alves, E
;
PUBLISHED:
2006
,
SOURCE:
6th International Conference on Nitride Semiconductors (ICNS-6)
in
Physica Status Solidi C - Current Topics in Solid State Physics, Vol 3, No 6,
VOLUME:
3,
ISSUE:
6
INDEXED IN:
Scopus
WOS
CrossRef
IN MY:
ORCID
302
TITLE:
Diffusion processes in seeded and unseeded SBT thin films with varied stoichiometry
Full Text
AUTHORS:
Aguilar, GG
;
Wu, A
;
Miguel A. Reis
;
Ramos, AR
;
Salvado, IMM
;
Alves, E
;
Costa, MEV
;
PUBLISHED:
2006
,
SOURCE:
SURFACE SCIENCE,
VOLUME:
600,
ISSUE:
9
INDEXED IN:
Scopus
WOS
CrossRef
:
10
IN MY:
ORCID
|
ResearcherID
303
TITLE:
Effect of annealing temperature on luminescence in Eu implanted GaN
Full Text
AUTHORS:
Bodiou, L
; Oussif, A; Braud, A;
Doualan, JL
;
Moncorge, R
;
Lorenz, K
;
Alves, E
;
PUBLISHED:
2006
,
SOURCE:
Meeting of the European-Materials-Research-Society
in
OPTICAL MATERIALS,
VOLUME:
28,
ISSUE:
6-7
INDEXED IN:
Scopus
WOS
CrossRef
IN MY:
ORCID
|
ResearcherID
304
TITLE:
Effect of the matrix on the 1.5 mu m photoluminescence of Er-doped silicon quantum dots
AUTHORS:
Cerqueira, MF
; Stepikhova, M; Losurdo, M;
Monteiro, T
;
Soares, MJ
;
Peres, M
;
Neves, A
;
Alves, E
;
PUBLISHED:
2006
,
SOURCE:
3rd International Materials Symposium/12th Meeting of the Sociedad-Portuguesa-da-Materials (Materials 2005/SPM)
in
ADVANCED MATERIALS FORUM III, PTS 1 AND 2,
VOLUME:
514-516,
ISSUE:
PART 2
INDEXED IN:
Scopus
WOS
IN MY:
ORCID
|
ResearcherID
305
TITLE:
Failure mechanism of AlN nanocaps used to protect rare earth-implanted GaN during high temperature annealing
Full Text
AUTHORS:
Nogales, E;
Martin, RW
; O'Donnell, KP;
Lorenz, K
;
Alves, E
;
Ruffenach, S
; Briot, O;
PUBLISHED:
2006
,
SOURCE:
APPLIED PHYSICS LETTERS,
VOLUME:
88,
ISSUE:
3
INDEXED IN:
Scopus
WOS
CrossRef
IN MY:
ORCID
|
ResearcherID
306
TITLE:
Hardware and software improvements in the Hotbird
AUTHORS:
Franco, N
;
Alves, E
;
Barradas, NP
;
PUBLISHED:
2006
,
SOURCE:
3rd International Materials Symposium/12th Meeting of the Sociedad-Portuguesa-da-Materials (Materials 2005/SPM)
in
ADVANCED MATERIALS FORUM III, PTS 1 AND 2,
VOLUME:
514-516,
ISSUE:
PART 2
INDEXED IN:
Scopus
WOS
IN MY:
ORCID
307
TITLE:
High temperature annealing of rare earth implanted GaN films: Structural and optical properties
Full Text
AUTHORS:
Lorenz, K
;
Wahl, U
;
Alves, E
; Nogales, E; Dalmasso, S;
Martin, RW
; O'Donnell, KP; Wojdak, M; Braud, A;
Monteiro, T
;
Wojtowicz, T
;
Ruterana, P
;
Ruffenach, S
; Briot, O;
PUBLISHED:
2006
,
SOURCE:
Meeting of the European-Materials-Research-Society
in
OPTICAL MATERIALS,
VOLUME:
28,
ISSUE:
6-7
INDEXED IN:
Scopus
WOS
CrossRef
:
39
IN MY:
ORCID
|
ResearcherID
308
TITLE:
Hydrogenated silicon carbon nitride films obtained by HWCVD, PA-HWCVD and PECVD techniques
Full Text
AUTHORS:
Ferreira, I
;
Fortunato, E
;
Vilarinho, P
;
Viana, AS
;
Ramos, AR
;
Alves, E
;
Martins, R
;
PUBLISHED:
2006
,
SOURCE:
21st International Conference on Amorphous and Nanocrystalline Semiconductors
in
JOURNAL OF NON-CRYSTALLINE SOLIDS,
VOLUME:
352,
ISSUE:
9-20
INDEXED IN:
Scopus
WOS
CrossRef
:
28
IN MY:
ORCID
|
ResearcherID
309
TITLE:
Identification of donor-related impurities in ZnO using photoluminescence and radiotracer techniques
AUTHORS:
Johnston, K; Henry, MO; McCabe, D; McGlynn, E; Dietrich, M;
Alves, E
; Xia, M;
PUBLISHED:
2006
,
SOURCE:
PHYSICAL REVIEW B,
VOLUME:
73,
ISSUE:
16
INDEXED IN:
Scopus
WOS
CrossRef
IN MY:
ORCID
|
ResearcherID
310
TITLE:
Implantation of Er/Yb ions into gallium nitride
AUTHORS:
Prajzler, V;
Jerabek, V
; Huttel, I;
Alves, E
; Buchal, C; Spirkova, J; Oswald, J; Perina, V; Boldyryeva, H; Zavadil, J;
PUBLISHED:
2006
,
SOURCE:
WSEAS Transactions on Electronics,
VOLUME:
3,
ISSUE:
4
INDEXED IN:
Scopus
IN MY:
ORCID
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