Eduardo Jorge da Costa Alves


AuthID: R-000-4EK

Confirmed Publications: 597



501
TITLE: Artificial neural network analysis of RBS data of Er-implanted sapphire  Full Text
AUTHORS: Barradas, NP ; Vieira, A; Alves, E ;
PUBLISHED: 2001, SOURCE: 12th International Conference on Ion Beam Modification of Materials (IBMM2000) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 175
INDEXED IN: Scopus WOS CrossRef
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502
TITLE: Cadmium addition to vacancy doped lanthanum manganites: from metallic to insulator behaviour  Full Text
AUTHORS: Araujo, JP ; Amaral, VS ; Tavares, PB ; Lencart Silva, F; Lourenco, AACS; Alves, E ; Sousa, JB ; Vieira, JM ;
PUBLISHED: 2001, SOURCE: International Conference on Magnetism in JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, VOLUME: 226, ISSUE: PART I
INDEXED IN: Scopus WOS CrossRef: 4
IN MY: ORCID | ResearcherID
503
TITLE: Coherent amorphization of Ge/Si multilayers with ion beams  Full Text
AUTHORS: Alves, E ; Sequeira, AD; Franco, N; da Silva, MF; Soares, JC ; Sobolev, NA; Carmo, MC;
PUBLISHED: 2001, SOURCE: E-MRS Spring Meeting on Materials Science with Ion Beams in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 178, ISSUE: 1-4
INDEXED IN: Scopus WOS CrossRef: 2
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504
TITLE: Compositional dependence of the strain-free optical band gap in InxGa1-xN layers  Full Text
AUTHORS: Pereira, S ; Correia, MR ; Monteiro, T ; Pereira, E; Alves, E ; Sequeira, AD; Franco, N;
PUBLISHED: 2001, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 78, ISSUE: 15
INDEXED IN: Scopus WOS CrossRef: 81
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505
TITLE: Compositional pulling effects in InxGa1-x/GaN layers: A combined depth-resolved cathodoluminescence and Rutherford backscattering/channeling study
AUTHORS: Pereira, S ; Correia, MR ; Pereira, E; O'Donnell, KP; Trager Cowan, C; Sweeney, F; Alves, E ;
PUBLISHED: 2001, SOURCE: PHYSICAL REVIEW B, VOLUME: 64, ISSUE: 20
INDEXED IN: Scopus WOS CrossRef: 128
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506
TITLE: Depth resolved studies of indium content and strain in InGaN layers  Full Text
AUTHORS: Pereira, S ; Correia, MR ; Pereira, E; O'Donnell, KP; Trager Cowan, C; Sweeney, F; Alves, E ; Sequeira, AD; Franco, N; Watson, IM;
PUBLISHED: 2001, SOURCE: 4th International Conference on Nitride Semiconductors (ICNS-4) in PHYSICA STATUS SOLIDI B-BASIC RESEARCH, VOLUME: 228, ISSUE: 1
INDEXED IN: Scopus WOS CrossRef: 3
IN MY: ORCID | ResearcherID
507
TITLE: Doping of GaN by ion implantation
AUTHORS: Alves, EJ ; Liu, C; Da Silva, MF; Soares, JC ; Correia, R; Monteiro, T;
PUBLISHED: 2001, SOURCE: Microstructural Processes in Irradiated Materials-2000 in Materials Research Society Symposium - Proceedings, VOLUME: 650
INDEXED IN: Scopus
IN MY: ORCID
508
TITLE: Elastic properties of (Ti,Al,Si) N nanocomposite films  Full Text
AUTHORS: Carvalho, S ; Vaz, F ; Rebouta, L ; Schneider, D; Cavaleiro, A ; Alves, E ;
PUBLISHED: 2001, SOURCE: 7th International Conference on Plasma Surface Engineering (PSE 2000) in SURFACE & COATINGS TECHNOLOGY, VOLUME: 142
INDEXED IN: Scopus WOS CrossRef: 37
IN MY: ORCID | ResearcherID
509
TITLE: Fe ion implantation in GaN: Damage, annealing, and lattice site location  Full Text
AUTHORS: Liu, C; Alves, E ; Sequeira, AD; Franco, N; da Silva, MF; Soares, JC ;
PUBLISHED: 2001, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 90, ISSUE: 1
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID | ResearcherID
510
TITLE: Green and red emission in Ca implanted GaN samples  Full Text
AUTHORS: Monteiro, T ; Boemare, C; Soares, MJ ; Alves, E ; Liu, C;
PUBLISHED: 2001, SOURCE: 21st International Conference on Defects in Semiconductors in PHYSICA B-CONDENSED MATTER, VOLUME: 308
INDEXED IN: Scopus WOS CrossRef: 3
IN MY: ORCID | ResearcherID
Page 51 of 60. Total results: 597.

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