511
TITLE: Green, red and infrared Er-related emission in implanted GaN : Er and GaN : Er,O samples  Full Text
AUTHORS: Monteiro, T ; Soares, J; Correia, MR ; Alves, E ;
PUBLISHED: 2001, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 89, ISSUE: 11
INDEXED IN: Scopus WOS CrossRef: 28
512
TITLE: Heavy ion implantation in GaN epilayers  Full Text
AUTHORS: Alves, E ; Marques, JG; Da Silva, MF; Soares, JC; Bartels, J; Vianden, R;
PUBLISHED: 2001, SOURCE: International Conference on Defects in Insulating Materials in RADIATION EFFECTS AND DEFECTS IN SOLIDS, VOLUME: 156, ISSUE: 1-4
INDEXED IN: WOS CrossRef
513
TITLE: High temperature annealing of Er implanted GaN  Full Text
AUTHORS: Alves, E ; Monteiro, T ; Soares, J; Santos, L; da Silva, MF; Soares, JC ; Lojkowski, W; Kolesnikov, D; Vianden, R; Correia, JG ;
PUBLISHED: 2001, SOURCE: Spring Meeting of the European-Materials-Research-Society in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 81, ISSUE: 1-3
INDEXED IN: Scopus WOS CrossRef: 12
514
TITLE: Hyperfine fields of 181Ta in UFe4Al8
AUTHORS: Marques, JG ; Barradas, NP ; Alves, E ; Ramos, AR ; Goncalves, AP ; Da Silva, MF; Soares, JC ;
PUBLISHED: 2001, SOURCE: Hyperfine Interactions, VOLUME: 136-137, ISSUE: 3-8
INDEXED IN: Scopus
IN MY: ORCID
515
TITLE: Hyperfine fields of Ta-181 in UFe4Al8  Full Text
AUTHORS: Marques, JG ; Barradas, NP ; Alves, E ; Ramos, AR ; Goncalves, AP ; Da Silva, MF; Soares, JC ;
PUBLISHED: 2001, SOURCE: 12th International Conference on Hyperfine Interactions in HYPERFINE INTERACTIONS, VOLUME: 136, ISSUE: 3-8
INDEXED IN: Scopus WOS CrossRef: 4
516
TITLE: Indium content determination related with structural and optical properties of InGaN layers  Full Text
AUTHORS: Pereira, S ; Correia, MR ; Monteiro, T ; Pereira, E; Soares, MR ; Alves, E ;
PUBLISHED: 2001, SOURCE: 4th European Workshop on Gallium Nitride in JOURNAL OF CRYSTAL GROWTH, VOLUME: 230, ISSUE: 3-4
INDEXED IN: Scopus WOS CrossRef: 8
517
TITLE: Indium distribution within InxGa1-xN epitaxial layers: A combined resonant Raman scattering and Rutherford backscattering study  Full Text
AUTHORS: Correia, R; Pereira, S ; Pereira, E; Alves, E ; Gleize, J; Frandon, J; Renucci, MA;
PUBLISHED: 2001, SOURCE: 4th International Conference on Nitride Semiconductors (ICNS-4) in PHYSICA STATUS SOLIDI B-BASIC RESEARCH, VOLUME: 228, ISSUE: 1
INDEXED IN: Scopus WOS CrossRef: 1
518
TITLE: Influence of radiotherapy treatments in head and neck oncological patients with biomaterial prostheses
AUTHORS: Pascoal, A; Teixeira, N; Alves, E ;
PUBLISHED: 2001, SOURCE: Topical Meeting on Medical Radiation Physics and Engineering (TM-MeRPE) in PHYSICA MEDICA, VOLUME: 17, ISSUE: SUPPL. 4
INDEXED IN: Scopus WOS
519
TITLE: Interpretation of double x-ray diffraction peaks from InGaN layers  Full Text
AUTHORS: Pereira, S ; Correia, MR ; Pereira, E; O'Donnell, KP; Alves, E ; Sequeira, AD; Franco, N;
PUBLISHED: 2001, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 79, ISSUE: 10
INDEXED IN: Scopus WOS CrossRef: 46
520
TITLE: Microstructure and mechanical properties of nanocomposite (Ti,Si,Al)N coatings  Full Text
AUTHORS: Carvalho, S ; Rebouta, L ; Cavaleiro, A ; Rocha, LA ; Gomes, J ; Alves, E ;
PUBLISHED: 2001, SOURCE: 28th International Conference on Metallurgical Coatings and Thin Films in THIN SOLID FILMS, VOLUME: 398
INDEXED IN: Scopus WOS CrossRef: 86
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