Elvira Maria Correia Fortunato


AuthID: R-000-4M5

Confirmed Publications: 508



271
TITLE: Characterization of the density of states of polymorphous silicon films produced at 13.56 and 27.12 MHz using CPM and SCLC techniques  Full Text
AUTHORS: Raniero, L; Pereira, L ; Zhang, SB; Ferreira, I ; Aguas, H ; Fortunato, E ; Martins, R ;
PUBLISHED: 2004, SOURCE: 20th International Conference on Amorphous and Microcrystalline Semiconductors in JOURNAL OF NON-CRYSTALLINE SOLIDS, VOLUME: 338
INDEXED IN: WOS
IN MY: ResearcherID
272
TITLE: Characterization of the density of states of polymorphous silicon films produced at 13.56 and 27.12 MHz using CPM and SCLC techniques  Full Text
AUTHORS: Raniero, L; Pereira, L ; Zhang, S; Ferreira, I ; Aguas, H ; Fortunato, E ; Martins, R ;
PUBLISHED: 2004, SOURCE: Journal of Non-Crystalline Solids, VOLUME: 338-340, ISSUE: 1 SPEC. ISS.
INDEXED IN: Scopus CrossRef
IN MY: ORCID
273
TITLE: Composition, structure and optical characteristics of polymorphous silicon films deposited by PECVD at 27.12 MHz
AUTHORS: Martins, R ; Aguas, H ; Ferreira, I ; Fortunato, E ; Raniero, L; Cabarrocas, PRI;
PUBLISHED: 2004, SOURCE: 2nd International Materials Symposium in ADVANCED MATERIALS FORUM II, VOLUME: 455-456
INDEXED IN: Scopus WOS CrossRef: 1
IN MY: ORCID
274
TITLE: Detection limits of a nip a-Si:H linear array position sensitive detector
AUTHORS: Martins, R ; Costa, D; Aguas, H ; Soares, F; Marques, A; Ferreira, I ; Borges, P; Fortunato, E ;
PUBLISHED: 2004, SOURCE: Amorphous and Nanocrystalline Silicon Science and Technology - 2004 in Materials Research Society Symposium Proceedings, VOLUME: 808
INDEXED IN: Scopus
IN MY: ORCID
275
TITLE: Effect of an interfacial oxide layer in the annealing behaviour of Au/a-Si : H MIS photodiodes  Full Text
AUTHORS: Aguas, H ; Pereira, L ; Ferreira, I ; Ramos, AR ; Viana, AS ; Andreu, J; Vilarinho, P ; Fortunato, E ; Martins, R ;
PUBLISHED: 2004, SOURCE: 20th International Conference on Amorphous and Microcrystalline Semiconductors in JOURNAL OF NON-CRYSTALLINE SOLIDS, VOLUME: 338, ISSUE: 1 SPEC. ISS.
INDEXED IN: Scopus WOS
IN MY: ORCID | ResearcherID
276
TITLE: Effect of annealing on gold rectifying contacts in amorphous silicon
AUTHORS: Aguas, H ; Pereira, L ; Ferreira, I ; Ramos, AR ; Viana, AS ; Andreu, J; Vilarinho, P ; Fortunato, E ; Martins, R ;
PUBLISHED: 2004, SOURCE: 2nd International Materials Symposium in ADVANCED MATERIALS FORUM II, VOLUME: 455-456
INDEXED IN: Scopus WOS
IN MY: ORCID | ResearcherID
277
TITLE: Effect of the discharge frequency and impedance on the structural properties of polymorphous silicon  Full Text
AUTHORS: Aguas, H ; Raniero, L; Pereira, L ; Fortunato, E ; Martins, R ;
PUBLISHED: 2004, SOURCE: Symposium on Thin Film and Nono-Structured Materials for Photovoltaics in THIN SOLID FILMS, VOLUME: 451
INDEXED IN: Scopus WOS
IN MY: ORCID | ResearcherID
278
TITLE: Effect of the tunnelling oxide growth by H2O2 oxidation on the performance of a-Si : H MIS photodiodes  Full Text
AUTHORS: Aguas, H ; Perreira, L; Silva, RJC ; Fortunato, E ; Martins, R ;
PUBLISHED: 2004, SOURCE: Symposium on Functional Metal Oxides - Semiconductor Structures held at the E-MRS 2003 Meeting in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 109, ISSUE: 1-3
INDEXED IN: Scopus WOS
IN MY: ORCID | ResearcherID
279
TITLE: Effect of the tunnelling oxide thickness and density on the performance of MIS photodiodes  Full Text
AUTHORS: Aguas, H ; Goullet, A; Pereira, L ; Fortunato, E ; Martins, R ;
PUBLISHED: 2004, SOURCE: Symposium on Thin Film and Nono-Structured Materials for Photovoltaics in THIN SOLID FILMS, VOLUME: 451
INDEXED IN: Scopus WOS
IN MY: ORCID | ResearcherID
280
TITLE: Effect of thermal treatment on the properties of sol-gel derived Al-doped ZnO thin films
AUTHORS: Musat, V; Teixeira, B; Fortunato, E ; Monteiro, RCC ; Vilarinho, P ;
PUBLISHED: 2004, SOURCE: 2nd International Materials Symposium in ADVANCED MATERIALS FORUM II, VOLUME: 455-456
INDEXED IN: Scopus WOS
IN MY: ORCID | ResearcherID
Page 28 of 51. Total results: 508.

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