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Elvira Maria Correia Fortunato
AuthID:
R-000-4M5
Publications
Confirmed
To Validate
Document Source:
All
Document Type:
All Document Types
Article (402)
Proceedings Paper (96)
Editorial Material (5)
Correction (2)
Book (1)
Book Chapter (1)
Review (1)
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Order:
Year Dsc
Year Asc
Cit. WOS Dsc
IF WOS Dsc
Cit. Scopus Dsc
IF Scopus Dsc
Title Asc
Title Dsc
Results:
10
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Confirmed Publications: 508
391
TITLE:
Properties presented by tin oxide thin films deposited by spray pyrolysis
AUTHORS:
Nunes, P;
Fortunato, E
;
Vilarinho, P
;
Martins, R
;
PUBLISHED:
2001
,
SOURCE:
6th International Conference on Polycrystalline Semiconductors
in
POLYCRYSTALLINE SEMICONDUCTORS IV MATERIALS, TECHNOLOGIES AND LARGE AREA ELECTRONICS,
VOLUME:
80-81
INDEXED IN:
Scopus
WOS
CrossRef
IN MY:
ORCID
392
TITLE:
Role of ion bombardment and plasma impedance on the performances presented by undoped a-Si : H films
Full Text
AUTHORS:
Martins, R
;
Aguas, H
;
Ferreira, I
;
Silva, V
; Cabrita, A;
Fortunato, E
;
PUBLISHED:
2001
,
SOURCE:
3rd Symposium O on Thin Film Materials for Large Area Electronics of the E-MRS 2000 Spring Meeting
in
THIN SOLID FILMS,
VOLUME:
383,
ISSUE:
1-2
INDEXED IN:
Scopus
WOS
CrossRef
IN MY:
ORCID
|
ResearcherID
393
TITLE:
Role of ion bombardment on the properties of a-Si : H films
Full Text
AUTHORS:
Aguas, H
;
Martins, R
;
Fortunato, E
;
PUBLISHED:
2001
,
SOURCE:
6th European Vacuum Conference
in
VACUUM,
VOLUME:
60,
ISSUE:
1-2
INDEXED IN:
WOS
IN MY:
ResearcherID
394
TITLE:
Role of the gas pressure and hydrogen dilution on the properties of large area nanocrystalline p-type silicon films produced by hot wire technique
Full Text
AUTHORS:
Ferreira, I
;
Cabrita, A
;
Fernandes, FB
;
Fortunato, E
;
Martins, R
;
PUBLISHED:
2001
,
SOURCE:
MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS,
VOLUME:
15,
ISSUE:
1-2
INDEXED IN:
Scopus
WOS
CrossRef
IN MY:
ORCID
|
ResearcherID
395
TITLE:
Silicon carbide alloys produced by hot wire, hot wire plasma-assisted and plasma-enhanced CVD techniques
Full Text
AUTHORS:
Ferreira, I
;
Costa, MEV
;
Pereira, L
;
Fortunato, E
;
Martins, R
;
Ramos, AR
;
Silva, MF
;
PUBLISHED:
2001
,
SOURCE:
Spring Meeting of the European-Materials-Research-Society
in
APPLIED SURFACE SCIENCE,
VOLUME:
184,
ISSUE:
1-4
INDEXED IN:
Scopus
WOS
CrossRef
:
16
IN MY:
ORCID
|
ResearcherID
396
TITLE:
Silicon carbide photodiodes: Schottky and PINIP structures
Full Text
AUTHORS:
Cabrita, A
;
Pereira, L
; Brida, D;
Lopes, A
;
Marques, A
;
Ferreira, I
;
Fortunato, E
;
Martins, R
;
PUBLISHED:
2001
,
SOURCE:
Spring Meeting of the European-Materials-Research-Society
in
APPLIED SURFACE SCIENCE,
VOLUME:
184,
ISSUE:
1-4
INDEXED IN:
Scopus
WOS
CrossRef
IN MY:
ORCID
|
ResearcherID
397
TITLE:
Silicon films produced by PECVD under powder formation conditions
AUTHORS:
Martins, R
;
Aguas, H
;
Silva, V
;
Ferreira, I
; Cabrita, A;
Fortunato, E
;
PUBLISHED:
2001
,
SOURCE:
4th European Workshop on Dusty and Colloidal Plasmas
in
Materials Science Forum,
VOLUME:
382
INDEXED IN:
Scopus
IN MY:
ORCID
398
TITLE:
Thin film combustible gas sensors based on zinc oxide
AUTHORS:
Nunes, P;
Fortunato, E
;
Martins, R
;
PUBLISHED:
2001
,
SOURCE:
Transport and Microstructural Phenomena in Oxide Electronics
in
Materials Research Society Symposium - Proceedings,
VOLUME:
666
INDEXED IN:
Scopus
IN MY:
ORCID
399
TITLE:
Thin film metal oxide semiconductors deposited on polymeric substrates
AUTHORS:
Fortunato, E
; Nunes, P; Marques, A; Costa, D;
Aguas, H
;
Ferreira, I
;
Costa, MEV
;
Martins, R
;
PUBLISHED:
2001
,
SOURCE:
2001 MRS Spring Meeting
in
Materials Research Society Symposium Proceedings,
VOLUME:
685
INDEXED IN:
Scopus
CrossRef
IN MY:
ORCID
400
TITLE:
Thin film position sensitive detectors based on pin amorphous silicon carbide structures
Full Text
AUTHORS:
Cabrita, A
;
Figueiredo, J
;
Pereira, L
;
Aguas, H
;
Silva, V
; Brida, D;
Ferreira, I
;
Fortunato, E
;
Martins, R
;
PUBLISHED:
2001
,
SOURCE:
Spring Meeting of the European-Materials-Research-Society
in
APPLIED SURFACE SCIENCE,
VOLUME:
184,
ISSUE:
1-4
INDEXED IN:
Scopus
WOS
CrossRef
IN MY:
ORCID
|
ResearcherID
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