Hugo Manuel Brito Águas


AuthID: R-000-61B

Confirmed Publications: 130



121
TITLE: Role of ion bombardment on the properties of a-Si : H films
AUTHORS: Aguas, H ; Martins, R ; Fortunato, E ;
PUBLISHED: 2000, SOURCE: Vacuum, VOLUME: 60, ISSUE: 1-2
INDEXED IN: Scopus
IN MY: ORCID
122
TITLE: Silicon films produced by PECVD under powder formation conditions
AUTHORS: Martins, R; Aguas, H ; Silva, V; Ferreira, I; Cabrita, A; Fortunato, E ;
PUBLISHED: 2000, SOURCE: 5th European Workshop on Dusty and Collidal Plasmas in PLASMA PROCESSING AND DUSTY PARTICLES, VOLUME: 382
INDEXED IN: WOS
IN MY: ResearcherID
123
TITLE: Study of the effect of different plasma-enhanced chemical vapour deposition reactor configurations on the properties of hydrogenated amorphous silicon thin films
AUTHORS: Aguas, H ; Silva, V; Ferreira, I ; Fortunato, E ; Martins, R ;
PUBLISHED: 2000, SOURCE: International Workshop on Semiconducting and Superconducting Materials in Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties, VOLUME: 80, ISSUE: 4
INDEXED IN: Scopus
IN MY: ORCID
124
TITLE: Study of the effect of different plasma-enhanced chemical vapour deposition reactor configurations on the properties of hydrogenated amorphous silicon thin films
AUTHORS: Aguas, H ; Silva, V; Ferreira, I ; Fortunato, E ; Martins, R ;
PUBLISHED: 2000, SOURCE: International Workshop on Semiconducting and Superconducting Materials in PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, VOLUME: 80, ISSUE: 4
INDEXED IN: WOS
125
TITLE: Towards the improvement of the stability of a-Si : H pin devices  Full Text
AUTHORS: Martins, R ; Aguas, H ; Ferreira, I ; Fortunato, E ; Guimaraes, L;
PUBLISHED: 2000, SOURCE: SOLAR ENERGY, VOLUME: 69, ISSUE: 1-6
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID | ResearcherID
126
TITLE: Two step process for the growth of a thin layer of silicon dioxide for tunnelling effect applications
AUTHORS: Aguas, H ; Cabrita, A; Tonello, P; Nunes, P; Fortunato, E ; Martins, R ;
PUBLISHED: 2000, SOURCE: Symposium on Recent Developments in Oxide and Metal Epitaxy-Theory and Experiment in RECENT DEVELOPMENTS IN OXIDE AND METAL EPITAXY-THEORY AND EXPERIMENT, VOLUME: 619
INDEXED IN: Scopus WOS
IN MY: ORCID | ResearcherID
127
TITLE: Characteristics of a linear array of a-Si : H thin film position sensitive detector  Full Text
AUTHORS: Fortunato, E ; Soares, F; Teodoro, P; Guimaraes, N; Mendes, M; Aguas, H ; Silva, V; Martins, R ;
PUBLISHED: 1999, SOURCE: THIN SOLID FILMS, VOLUME: 337, ISSUE: 1-2
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID | ResearcherID
128
TITLE: Influence of the H2 dilution and filament temperature on the properties of P doped silicon carbide thin films produced by hot-wire technique
AUTHORS: Ferreira, I ; Aguas, H ; Mendes, L; Fernandes, F ; Fortunato, E ; Martins, R ;
PUBLISHED: 1999, SOURCE: Proceedings of the 1998 MRS Spring Meeting in Materials Research Society Symposium - Proceedings, VOLUME: 507
INDEXED IN: Scopus
IN MY: ORCID
129
TITLE: Performances of nano/amorphous silicon films produced by hot wire plasma assisted technique
AUTHORS: Ferreira, I ; Aguas, H ; Mendes, L; Fernandes, F ; Fortunato, E ; Martins, R ;
PUBLISHED: 1999, SOURCE: Proceedings of the 1998 MRS Spring Meeting in Materials Research Society Symposium - Proceedings, VOLUME: 507
INDEXED IN: Scopus
IN MY: ORCID
130
TITLE: Role of the hot wire filament temperature on the structure and morphology of the nanocrystalline silicon p-doped films  Full Text
AUTHORS: Ferreira, I ; Aguas, H ; Mendes, L; Martins, R ;
PUBLISHED: 1999, SOURCE: 14th International Vacuum Congress/10th International Conference on Solid Surfaces/5th International Conference on Nanometre-Scale Science and Technology/10th International Conference on Quantitative Surface Analysis in APPLIED SURFACE SCIENCE, VOLUME: 144-45
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID | ResearcherID
Page 13 of 13. Total results: 130.

A place for researchers and their institutions

Useful Links

Get Help

© 2024 CRACS & Inesc TEC - All Rights Reserved Privacy Policy | Terms of Service