João Pedro Estrela Rodrigues Conde


AuthID: R-000-7DS

Confirmed Publications: 208



171
TITLE: Post-deposition annealing and hydrogenation of hot-wire amorphous and microcrystalline silicon films
AUTHORS: Conde, JP ; Brogueira, P ; Chu, V ;
PUBLISHED: 1997, SOURCE: Symposium Q on Advances in Microcrystalline and Nanocrystalline Semiconductors - 1996, at the 1996 MRS Fall Meeting in ADVANCES IN MICROCRYSTALLINE AND NANOCRYSTALLINE SEMICONDUCTORS - 1996, VOLUME: 452
INDEXED IN: Scopus WOS
IN MY: ORCID
172
173
TITLE: Amorphous silicon-carbon alloys deposited by electron-cyclotron resonance PECVD
AUTHORS: Chu, V ; Conde, JP ;
PUBLISHED: 1996, SOURCE: 14th Symposium on Amorphous Silicon Technology, at the 1996 MRS Spring Meeting in AMORPHOUS SILICON TECHNOLOGY - 1996, VOLUME: 420
INDEXED IN: Scopus WOS
IN MY: ORCID
174
TITLE: In-plane photoconductivity in amorphous silicon doping multilayers
AUTHORS: Conde, JP ; Silva, M; Chu, V ; Gleskova, H; Vasanth, K; Wagner, S; Shen, DS; Popovic, P; Grebner, S; Schwarz, R;
PUBLISHED: 1996, SOURCE: PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, VOLUME: 74, ISSUE: 4
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID
175
TITLE: Photoconductive analysis of defect density of hydrogenated amorphous silicon during room-temperature plasma posthydrogenation, light soaking, and thermal annealing
AUTHORS: Condo, JP ; Goncalves, M; Brogueira, P ; Schotten, V; Chu, V ;
PUBLISHED: 1996, SOURCE: PHYSICAL REVIEW B, VOLUME: 53, ISSUE: 4
INDEXED IN: Scopus WOS
IN MY: ORCID
176
TITLE: Study of doped-intrinsic interfaces in amorphous semiconductors using doping multilayers
AUTHORS: Conde, JP ; Silva, M; Chu, V ;
PUBLISHED: 1996, SOURCE: 7th International Conference on Intergranular and Interphase Boundaries in Materials (iib95) in INTERGRANULAR AND INTERPHASE BOUNDARIES IN MATERIALS, PT 2, VOLUME: 207-2, ISSUE: PART 2
INDEXED IN: Scopus WOS
IN MY: ORCID
177
TITLE: The influence of hydrogen dilution and substrate temperature in hot-wire deposition of amorphous and microcrystalline silicon with filament temperatures between 1900 and 2500 degrees C
AUTHORS: Conde, JP ; Brogueira, P ; Castanha, R; Chu, V ;
PUBLISHED: 1996, SOURCE: 14th Symposium on Amorphous Silicon Technology, at the 1996 MRS Spring Meeting in AMORPHOUS SILICON TECHNOLOGY - 1996, VOLUME: 420
INDEXED IN: Scopus WOS
IN MY: ORCID
178
TITLE: Amorphous-to-microcrystalline silicon transition in hot-wire chemical vapor deposition
AUTHORS: Brogueira, P ; Chu, V; Conde, JP ;
PUBLISHED: 1995, SOURCE: Proceedings of the 1995 MRS Spring Meeting in Materials Research Society Symposium - Proceedings, VOLUME: 377
INDEXED IN: Scopus
IN MY: ORCID
179
TITLE: LOW FILAMENT TEMPERATURE DEPOSITION OF A-SI-H BY HOT-WIRE CHEMICAL-VAPOR-DEPOSITION  Full Text
AUTHORS: BROGUEIRA, P ; CONDE, JP ; AREKAT, S; CHU, V ;
PUBLISHED: 1995, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 78, ISSUE: 6
INDEXED IN: Scopus WOS
IN MY: ORCID
180
TITLE: Optoelectronic properties of high-gap amorphous silicon-carbon alloys
AUTHORS: Chu, V; Conde, JP ; Brogueira, P ; Micaelo, P; Jarego, JP; da Silva, MF; Soares, JC ;
PUBLISHED: 1995, SOURCE: Proceedings of the 1995 MRS Spring Meeting in Materials Research Society Symposium - Proceedings, VOLUME: 377
INDEXED IN: Scopus
IN MY: ORCID
Page 18 of 21. Total results: 208.

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