91
TITLE: Electrical activity of chalcogen-hydrogen defects in silicon
AUTHORS: Coutinho, J ; Torres, VJB ; Jones, R; Briddon, PR;
PUBLISHED: 2003, SOURCE: PHYSICAL REVIEW B, VOLUME: 67, ISSUE: 3
INDEXED IN: Scopus WOS CrossRef: 72
IN MY: ORCID
92
TITLE: Electronic properties of vacancy-oxygen complexes in SiGe alloys  Full Text
AUTHORS: Markevich, VP; Peaker, AR; Murin, LI; Coutinho, J ; Torres, VJB ; Jones, R; Oberg, S; Briddon, PR; Auret, FD; Abrosimov, NV;
PUBLISHED: 2003, SOURCE: 22nd International Conference on Defects in Semiconductors (ICDS-22) in PHYSICA B-CONDENSED MATTER, VOLUME: 340
INDEXED IN: Scopus WOS CrossRef: 2
IN MY: ORCID
93
TITLE: Electronic structure of divacancy-hydrogen complexes in silicon  Full Text
AUTHORS: Coutinho, J ; Torres, VJB ; Jones, R; Oberg, S; Briddon, PR;
PUBLISHED: 2003, SOURCE: Workshop on the Physics of Group IV Materials in JOURNAL OF PHYSICS-CONDENSED MATTER, VOLUME: 15, ISSUE: 39
INDEXED IN: Scopus WOS CrossRef: 8
IN MY: ORCID
94
TITLE: Interaction between oxygen and single self-interstitials in silicon  Full Text
AUTHORS: Pinho, N; Coutinho, J ; Jones, R; Briddon, PR;
PUBLISHED: 2003, SOURCE: 22nd International Conference on Defects in Semiconductors (ICDS-22) in PHYSICA B-CONDENSED MATTER, VOLUME: 340
INDEXED IN: Scopus WOS CrossRef: 5
IN MY: ORCID
95
TITLE: Shallow donor activity of S-H, Se-H, and Te-H complexes in silicon  Full Text
AUTHORS: Coutinho, J ; Torres, VJB ; Jones, R; Resende, A; Briddon, PR;
PUBLISHED: 2003, SOURCE: International Conference on Shallow-Level Centers in Semiconductors in PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, VOLUME: 235, ISSUE: 1
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID
96
TITLE: Structure and electrical activity of rare-earth dopants in selected III-Vs
AUTHORS: Filhol, JS; Petit, S; Jones, R; Hourahine, B; Th Frauenheim; Overhof, H; Coutinho, J ; Shaw, MJ; Briddon, PR; Oberg, S;
PUBLISHED: 2003, SOURCE: GaN and Related Alloys - 2003 in Materials Research Society Symposium - Proceedings, VOLUME: 798
INDEXED IN: Scopus
97
TITLE: The formation, dissociation and electrical activity of divacancy-oxygen complexes in Si  Full Text
AUTHORS: Coutinho, J ; Jones, R; Oberg, S; Briddon, PR;
PUBLISHED: 2003, SOURCE: 22nd International Conference on Defects in Semiconductors (ICDS-22) in PHYSICA B-CONDENSED MATTER, VOLUME: 340
INDEXED IN: Scopus WOS CrossRef: 12
IN MY: ORCID
98
TITLE: Interstitial carbon-oxygen center and hydrogen related shallow thermal donors in Si
AUTHORS: Coutinho, J ; Jones, R; Briddon, PR; Oberg, S; Murin, LI; Markevich, VP; Lindstrom, JL;
PUBLISHED: 2002, SOURCE: Physical Review B - Condensed Matter and Materials Physics, VOLUME: 65, ISSUE: 1
INDEXED IN: Scopus
99
TITLE: Isotopic effects on vibrational modes of thermal double donors in Si and Ge  Full Text
AUTHORS: Murin, LI; Lindstrom, JL; Markevich, VP; Hallberg, T; Litvinov, VV; Coutinho, J ; Jones, R; Briddon, PR; Oberg, S;
PUBLISHED: 2001, SOURCE: Physica B: Condensed Matter, VOLUME: 308-310
INDEXED IN: Scopus CrossRef: 8
IN MY: ORCID
100
TITLE: Over-coordinated oxygen in the interstitial carbon-oxygen complex  Full Text
AUTHORS: Coutinho, J ; Jones, R; Briddon, PR; Oberg, S; Murin, LI; Markevich, VP; Lindstrom, JL;
PUBLISHED: 2001, SOURCE: Physica B: Condensed Matter, VOLUME: 308-310
INDEXED IN: Scopus CrossRef: 6
IN MY: ORCID
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