31
TITLE: Inducing energy gaps in monolayer and bilayer graphene: Local density approximation calculations
AUTHORS: Ribeiro, RM ; Peres, NMR ; Coutinho, J ; Briddon, PR;
PUBLISHED: 2008, SOURCE: PHYSICAL REVIEW B, VOLUME: 78, ISSUE: 7
INDEXED IN: Scopus WOS CrossRef: 88
IN MY: ORCID
32
TITLE: Interstitial carbon-related defects in Si1-xGex alloys
AUTHORS: Khirunenko, LI; Yu V Pomozov; Sosnin, MG; Duvanskii, A; Torres, VJB ; Coutinho, J ; Jones, R; Briddon, PR; Abrosimov, NV; Riemann, H;
PUBLISHED: 2008, SOURCE: 12th International Autumn Meeting: Gettering and Defect Engineering in Semiconductor Technology, GADEST 2007 in Diffusion and Defect Data Pt.B: Solid State Phenomena, VOLUME: 131-133
INDEXED IN: Scopus
33
TITLE: Limits to n-type doping in Ge: Formation of donor-vacancy complexes
AUTHORS: Coutinho, J ; Janke, C; Carvalho, A; Oberg, S; Torres, VJB ; Jones, R; Briddon, PR;
PUBLISHED: 2008, SOURCE: 3rd International Conference on Diffusion in Solids and Liquids in DIFFUSION IN SOLIDS AND LIQUIDS III, VOLUME: 273-276
INDEXED IN: Scopus WOS CrossRef: 5
IN MY: ORCID
34
TITLE: Role of optical phonon in Ge thermal conductivity  Full Text
AUTHORS: Kazan, M; Pereira, S ; Coutinho, J ; Correia, MR ; Masri, P;
PUBLISHED: 2008, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 92, ISSUE: 21
INDEXED IN: Scopus WOS CrossRef: 17
IN MY: ORCID
35
TITLE: Ab-initio modeling of carbon and carbon-hydrogen defects in InAs  Full Text
AUTHORS: Torres, VJB ; Coutinho, J ; Briddon, PR;
PUBLISHED: 2007, SOURCE: 24th International Conference on Defects in Semiconductors in PHYSICA B-CONDENSED MATTER, VOLUME: 401
INDEXED IN: Scopus WOS CrossRef: 2
IN MY: ORCID
36
TITLE: Ab-initio modeling of defects in germanium
AUTHORS: Jones, R; Coutinho, JA ;
PUBLISHED: 2007, SOURCE: Germanium-Based Technologies
INDEXED IN: Scopus CrossRef: 1
IN MY: ORCID
37
TITLE: Early stage donor-vacancy clusters in germanium  Full Text
AUTHORS: Jose Coutinho ; Vitor J B Torres ; Sven Oberg; Alexandra Carvalho; Colin Janke; Robert Jones; Patrick R Briddon;
PUBLISHED: 2007, SOURCE: 2nd International Workshop on Coordination Action on Defects Relevant to Engineering Silicon-Based Devices in JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, VOLUME: 18, ISSUE: 7
INDEXED IN: Scopus WOS CrossRef: 17
IN MY: ORCID
38
TITLE: Identification of stable and metastable forms of VO2 centers in germanium  Full Text
AUTHORS: Carvalho, A; Torres, VJB ; Markevich, VP; Coutinho, J ; Litvinov, VV; Peaker, AR; Jones, R; Briddon, PR;
PUBLISHED: 2007, SOURCE: 24th International Conference on Defects in Semiconductors in PHYSICA B-CONDENSED MATTER, VOLUME: 401
INDEXED IN: Scopus WOS CrossRef: 3
IN MY: ORCID
39
TITLE: Interstitial carbon-related defects in Si1-xGex alloys  Full Text
AUTHORS: Khirunenko, LI; Yu V Pomozov; Sosnin, MG; Duvanskii, A; Torres, VJB ; Coutinho, J ; Jones, R; Briddon, PR; Abrosimov, NV; Riemann, H;
PUBLISHED: 2007, SOURCE: Physica B: Condensed Matter, VOLUME: 401-402
INDEXED IN: Scopus CrossRef
40
TITLE: Interstitial carbon-related defects in Si1-xGex alloys  Full Text
AUTHORS: Khirunenko, LI; Yu. V Pomozov; Sosnin, MG; Duvanskii, A; Torres, VJB ; Coutinho, J ; Jones, R; Briddon, PR; Abrosimov, NV; Riemann, H;
PUBLISHED: 2007, SOURCE: 24th International Conference on Defects in Semiconductors in PHYSICA B-CONDENSED MATTER, VOLUME: 401
INDEXED IN: WOS
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