José Pedro de Abreu Coutinho


AuthID: R-000-8V3

Confirmed Publications: 105



81
TITLE: Vibrational properties of elemental hydrogen centres in Si, Ge and dilute SiGe alloys  Full Text
AUTHORS: Balsas, A ; Torres, VJB ; Coutinho, J ; Jones, R; Hourahine, B; Briddon, PR; Barroso, M ;
PUBLISHED: 2005, SOURCE: 1st International Workshop on Coordination Action on Defects Relevent to Engineering Silicon-Based Devices in JOURNAL OF PHYSICS-CONDENSED MATTER, VOLUME: 17, ISSUE: 22
INDEXED IN: WOS
82
TITLE: Vibrational properties of elemental hydrogen centres in Si, Ge and dilute SiGe alloys  Full Text
AUTHORS: Balsas, A ; Torres, VJB ; Coutinho, J ; Jones, R; Hourahine, B; Briddon, PR; Barroso, M ;
PUBLISHED: 2005, SOURCE: Journal of Physics Condensed Matter, VOLUME: 17, ISSUE: 22
INDEXED IN: Scopus CrossRef
IN MY: ORCID
83
TITLE: Calculation of deep states in SiGe alloys: Interstitial carbon-oxygen complexes
AUTHORS: Balsas, A ; Coutinho, J ; Torres, VJB ; Briddon, PR; Barroso, M ;
PUBLISHED: 2004, SOURCE: PHYSICAL REVIEW B, VOLUME: 70, ISSUE: 8
INDEXED IN: Scopus WOS CrossRef: 19
IN MY: ORCID
84
TITLE: Electronic levels of interstitial carbon and carbon-oxygen centers in SiGe alloys  Full Text
AUTHORS: Coutinho, J ; Balsas, A ; Torres, VJB ; Briddom, PR; Barroso, M ;
PUBLISHED: 2004, SOURCE: Symposium on Material Science Issues in Advanced CMOS Source-Drain Engineeing held at the E-MRS 2004 Spring Meeting in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 114, ISSUE: SPEC. ISS.
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID
85
TITLE: Lattice isotope effects on optical transitions in silicon
AUTHORS: Hayama, S; Davies, G; Tan, J; Coutinho, J ; Jones, R; Itoh, KM;
PUBLISHED: 2004, SOURCE: PHYSICAL REVIEW B, VOLUME: 70, ISSUE: 3
INDEXED IN: Scopus WOS CrossRef: 15
IN MY: ORCID
86
TITLE: Optically active erbium-oxygen complexes in GaAs  Full Text
AUTHORS: Coutinho, J ; Jones, R; Shaw, MJ; Briddon, PR; Oberg, S;
PUBLISHED: 2004, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 84, ISSUE: 10
INDEXED IN: Scopus WOS CrossRef: 9
IN MY: ORCID
87
TITLE: Structure and properties of vacancy-oxygen complexes in Si1-xGex alloys
AUTHORS: Markevich, VP; Peaker, AR; Coutinho, J ; Jones, R; Torres, VJB ; Oberg, S; Briddon, PR; Murin, LI; Dobaczewski, L; Abrosimov, NV;
PUBLISHED: 2004, SOURCE: PHYSICAL REVIEW B, VOLUME: 69, ISSUE: 12
INDEXED IN: Scopus WOS CrossRef: 31
IN MY: ORCID
88
TITLE: Ab initio modeling of Be-H and Zn-H complexes in Si  Full Text
AUTHORS: Coutinho, J ; Torres, VJB ; Briddon, PR;
PUBLISHED: 2003, SOURCE: 22nd International Conference on Defects in Semiconductors (ICDS-22) in PHYSICA B-CONDENSED MATTER, VOLUME: 340
INDEXED IN: Scopus WOS CrossRef: 2
IN MY: ORCID
89
TITLE: Ab initio modeling of N-H, P-H and As-H defects in ZnSe  Full Text
AUTHORS: Torres, VJB ; Coutinho, J ; Briddon, PR;
PUBLISHED: 2003, SOURCE: 22nd International Conference on Defects in Semiconductors (ICDS-22) in PHYSICA B-CONDENSED MATTER, VOLUME: 340
INDEXED IN: Scopus WOS CrossRef: 1
IN MY: ORCID
90
TITLE: Effect of stress on the energy levels of the vacancy-oxygen-hydrogen complex in Si
AUTHORS: Coutinho, J ; Andersen, O; Dobaczewski, L; Nielsen, KB; Peaker, AR; Jones, R; Oberg, S; Briddon, PR;
PUBLISHED: 2003, SOURCE: PHYSICAL REVIEW B, VOLUME: 68, ISSUE: 18
INDEXED IN: Scopus WOS CrossRef: 20
IN MY: ORCID
Page 9 of 11. Total results: 105.

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