Katharina Lorenz


AuthID: R-000-90E

Confirmed Publications: 129



31
TITLE: Rapid thermal annealing of rare earth implanted ZnO epitaxial layers  Full Text
AUTHORS: Miranda, SMC; Peres, M; Monteiro, T ; Alves, E ; Sun, HD; Geruschke, T; Vianden, R; Lorenz, K ;
PUBLISHED: 2011, SOURCE: Spring Meeting of the European-Materials-Research-Society in OPTICAL MATERIALS, VOLUME: 33, ISSUE: 7
INDEXED IN: Scopus WOS CrossRef: 18
IN MY: ORCID | ResearcherID
32
TITLE: Structural and optical properties of Er implanted AlN thin films: Green and infrared photoluminescence at room temperature  Full Text
AUTHORS: Soares, MJ ; Leitao, JP ; da Silva, MIN; Gonzalez, JC; Matinaga, FM; Lorenz, K ; Alves, E ; Peres, M; Monteiro, T ;
PUBLISHED: 2011, SOURCE: Spring Meeting of the European-Materials-Research-Society in OPTICAL MATERIALS, VOLUME: 33, ISSUE: 7
INDEXED IN: Scopus WOS CrossRef: 5
IN MY: ORCID | ResearcherID
33
34
TITLE: The high sensitivity of InN under rare earth ion implantation at medium range energy  Full Text
AUTHORS: Lacroix, B; Chauvat, MP; Ruterana, P; Lorenz, K ; Alves, E ; Syrkin, A;
PUBLISHED: 2011, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 44, ISSUE: 29
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID | ResearcherID
35
TITLE: The photoluminescence/excitation (PL/E) spectroscopy of Eu-implanted GaN  Full Text
AUTHORS: O'Donnell, KP; Roqan, IS; Ke Wang; Lorenz, K ; Alves, E ; Bockowski, M;
PUBLISHED: 2011, SOURCE: Spring Meeting of the European-Materials-Research-Society in OPTICAL MATERIALS, VOLUME: 33, ISSUE: 7
INDEXED IN: Scopus WOS
IN MY: ORCID | ResearcherID
36
TITLE: The role of the annealing temperature on the optical and structural properties of Eu doped GaN/AlN QD  Full Text
AUTHORS: Peres, M; Magalhaes, S; Rodrigues, J; Soares, MJ ; Fellmann, V; Neves, AJ ; Alves, E ; Daudin, B; Lorenz, K ; Monteiro, T ;
PUBLISHED: 2011, SOURCE: Spring Meeting of the European-Materials-Research-Society (E-MRS) in OPTICAL MATERIALS, VOLUME: 33, ISSUE: 7
INDEXED IN: Scopus WOS CrossRef: 3
IN MY: ORCID | ResearcherID
37
TITLE: Unintentional incorporation of hydrogen in wurtzite InN with different surface orientations  Full Text
AUTHORS: Darakchieva, V; Lorenz, K ; Y Xie; Alves, E ; Hsiao, CL; Chen, LC; Tu, LW; Schaff, WJ; Yamaguchi, T; Nanishi, Y;
PUBLISHED: 2011, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 110, ISSUE: 6
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID | ResearcherID
38
TITLE: Al1-xInxN/GaN bilayers: Structure, morphology, and optical properties  Full Text
AUTHORS: Lorenz, K ; Magalhaes, S; Franco, N; Barradas, NP ; Darakchieva, V; Alves, E ; Pereira, S ; Correia, MR ; Munnik, F; Martin, RW; O'Donnell, KP; Watson, IM;
PUBLISHED: 2010, SOURCE: E-MRS Fall Meeting on Wide Band Gap II-VI and III-V Semiconductors in PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, VOLUME: 247, ISSUE: 7
INDEXED IN: Scopus WOS CrossRef: 7
IN MY: ORCID | ResearcherID
39
TITLE: An In-defect complex as a possible explanation for high luminous efficacy of InGaN and AlInN based devices  Full Text
AUTHORS: Kessler, P; Lorenz, K ; Miranda, SMC; Correia, JG ; Johnston, K; Vianden, R;
PUBLISHED: 2010, SOURCE: 3rd Joint International Conference on Hyperfine Interactions (HFI) / International Symposium on Nuclear Quadrupole Interactions (NQI) in HYPERFINE INTERACTIONS, VOLUME: 197, ISSUE: 1-3
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID
40
TITLE: Defect studies and optical activation of Yb doped GaN  Full Text
AUTHORS: Lorenz, K ; Alves, E ; Magalhes, S; Peres, M; Monteiro, T; Kozanecki, A; Valerio, MEG;
PUBLISHED: 2010, SOURCE: 16th International Conference on Defects in Insulating Materials, ICDIM2008 in Journal of Physics: Conference Series, VOLUME: 249
INDEXED IN: Scopus CrossRef: 2
IN MY: ORCID
Page 4 of 13. Total results: 129.

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