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TITLE: High temperature annealing of Europium implanted AlN Full Text
AUTHORS: Lorenz, K ; Magalhaes, S; Alves, E ; Peres, M; Monteiro, T ; Neves, AJ ; Bockowski, M;
PUBLISHED: 2010, SOURCE: 15th International Conference of the Radiation Effects in Insulators in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 268, ISSUE: 19

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TITLE: Hydrogen in InN: A ubiquitous phenomenon in molecular beam epitaxy grown material Full Text
AUTHORS: Darakchieva, V; Lorenz, K ; Barradas, NP ; Alves, E ; Monemar, B; Schubert, M; Franco, N; Hsiao, CL; Chen, LC; Schaff, WJ; Tu, LW; Yamaguchi, T; Nanishi, Y;
PUBLISHED: 2010, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 96, ISSUE: 8

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TITLE: Identification of the prime optical center in GaN:Eu3+
AUTHORS: Roqan, IS; O'Donnell, KP; Martin, RW; Edwards, PR; Song, SF; Vantomme, A; Lorenz, K ; Alves, E ; Bockowski, M;
PUBLISHED: 2010, SOURCE: PHYSICAL REVIEW B, VOLUME: 81, ISSUE: 8

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TITLE: Indium kinetics during the plasma-assisted molecular beam epitaxy of semipolar (11-22) InGaN layers Full Text
AUTHORS: Das, A; Magalhaes, S; Kotsar, Y; Kandaswamy, PK; Gayral, B; Lorenz, K ; Alves, E ; Ruterana, P; Monroy, E;
PUBLISHED: 2010, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 96, ISSUE: 18

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TITLE: Influence of thermal annealing on the structural and optical properties of GaN/AlN quantum dots Full Text
AUTHORS: Peres, M; Neves, AJ ; Monteiro, T ; Magalhaes, S; Alves, E ; Lorenz, K ; Okuno Vila, H; Fellmann, V; Bougerol, C; Daudin, B;
PUBLISHED: 2010, SOURCE: E-MRS Fall Meeting on Wide Band Gap II-VI and III-V Semiconductors in PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, VOLUME: 247, ISSUE: 7

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