Katharina Lorenz


AuthID: R-000-90E

Confirmed Publications: 129



51
TITLE: Optical doping and damage formation in AlN by Eu implantation  Full Text
AUTHORS: Lorenz, K ; Alves, E ; Gloux, F; Ruterana, P; Peres, M; Neves, AJ ; Monteiro, T ;
PUBLISHED: 2010, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 107, ISSUE: 2
INDEXED IN: Scopus WOS CrossRef: 27
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52
TITLE: RE Implantation and Annealing of III-Nitrides
AUTHORS: Katharina Lorenz ; Eduardo Alves ; Florence Gloux; Pierre Ruterana;
PUBLISHED: 2010, SOURCE: RARE EARTH DOPED III-NITRIDES FOR OPTOELECTRONIC AND SPINTRONIC APPLICATIONS, VOLUME: 124
INDEXED IN: Scopus WOS CrossRef
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53
TITLE: The Characterization of N Interstitials and Dangling Bond Point Defects on Ion-Implanted GaN Nanowires Studied by Photoluminescence and X-Ray Absorption Spectroscopy. Rapid Communications of the American Ceramic Society  Full Text
AUTHORS: Kuo Hao Lee; Jau Wern Chiou; Jin Ming Chen; Jyh Fu Lee; Alain Braud; Katharina Lorenz ; Eduardo Alves ; In Gann Chen;
PUBLISHED: 2010, SOURCE: JOURNAL OF THE AMERICAN CERAMIC SOCIETY, VOLUME: 93, ISSUE: 11
INDEXED IN: Scopus WOS CrossRef
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54
TITLE: Thin film depth profiling using simultaneous particle backscattering and nuclear resonance profiling  Full Text
AUTHORS: Barradas, NP ; Mateus, R ; Fonseca, M. ; Miguel A. Reis ; Lorenz, K ; Vickridge, I;
PUBLISHED: 2010, SOURCE: 19th International Conference on Ion Beam Analysis in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 268, ISSUE: 11-12
INDEXED IN: Scopus WOS CrossRef
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55
TITLE: Total reflectance and Raman studies in AlyInxGa1-x-yN epitaxial layers  Full Text
AUTHORS: Margarida M Bola; Correia, MR ; Pereira, S ; Gonzalez, JC; Lorenz, K ; Alves, E ; Barradas, N ;
PUBLISHED: 2010, SOURCE: Symposium on Group III Nitride Semiconductors held at the 2009 EMRS Spring Meeting in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 1, VOLUME: 7, ISSUE: 1
INDEXED IN: Scopus WOS CrossRef
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56
TITLE: Alloy and lattice disorder in Hf implanted AlxGa1-xN (0 <= x <= 1)  Full Text
AUTHORS: Thomas Geruschke; Katharina Lorenz ; Reiner Vianden;
PUBLISHED: 2009, SOURCE: 25th International Conference on Defects in Semiconductors in PHYSICA B-CONDENSED MATTER, VOLUME: 404, ISSUE: 23-24
INDEXED IN: Scopus WOS
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57
TITLE: Breakdown of anomalous channeling with ion energy for accurate strain determination in GaN-based heterostructures  Full Text
AUTHORS: Redondo Cubero, A ; Lorenz, K ; Gago, R; Franco, N; Fernandez Garrido, S; Smulders, PJM; Munoz, E; Calleja, E; Watson, IM; Alves, E ;
PUBLISHED: 2009, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 95, ISSUE: 5
INDEXED IN: Scopus WOS
IN MY: ORCID | ResearcherID
58
TITLE: Europium doping of zincblende GaN by ion implantation  Full Text
AUTHORS: Lorenz, K ; Roqan, IS; Franco, N; O'Donnell, KP; Darakchieva, V; Alves, E ; Trager Cowan, C; Martin, RW; As, DJ; Panfilova, M;
PUBLISHED: 2009, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 105, ISSUE: 11
INDEXED IN: Scopus WOS CrossRef
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59
TITLE: Influence of steering effects on strain detection in AlGaInN/GaN heterostructures by ion channelling  Full Text
AUTHORS: Redondo Cubero, A ; Lorenz, K ; Franco, N; Fernandez Garrido, S; Gago, R; Smulders, PJM; Munoz, E; Calleja, E; Alves, E ;
PUBLISHED: 2009, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 42, ISSUE: 6
INDEXED IN: Scopus WOS
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60
TITLE: Influence of the AlN molar fraction on the structural and optical properties of praseodymium-doped AlxGa1-xN (0 <= x <= 1) alloys  Full Text
AUTHORS: Peres, M; Magalhaes, S; Franco, N; Soares, MJ ; Neves, AJ ; Alves, E ; Lorenz, K ; Monteiro, T ;
PUBLISHED: 2009, SOURCE: Symposium on Wide Band Gap Semiconductor Nanostructures for Optoelectronic Applications held at the 2008 E-MRS Conference in MICROELECTRONICS JOURNAL, VOLUME: 40, ISSUE: 2
INDEXED IN: Scopus WOS CrossRef: 13
IN MY: ORCID | ResearcherID
Page 6 of 13. Total results: 129.

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