Maria do Rosário Pimenta Correia
AuthID: R-000-B8B
71
TITLE: Photoluminescence and Raman study of a tensilely strained Si type-II quantum well on a relaxed SiGe graded buffer Full Text
AUTHORS: Santos, NM; Leitao, JP ; Sobolev, NA; Correia, MR; Carmo, MC; Soares, MR; Kasper, E; Werner, J;
PUBLISHED: 2009, SOURCE: Symposium K on Semiconductor Nanostructures Towards Electronic and Optoelectronic Device Applications II at the E-MRS Spring Meeting in SEMICONDUCTOR NANOSTRUCTURES TOWARDS ELECTRONIC AND OPTOELECTRONIC DEVICE APPLICATIONS II (SYMPOSIUM K, E-MRS 2009 SPRING MEETING), VOLUME: 6
AUTHORS: Santos, NM; Leitao, JP ; Sobolev, NA; Correia, MR; Carmo, MC; Soares, MR; Kasper, E; Werner, J;
PUBLISHED: 2009, SOURCE: Symposium K on Semiconductor Nanostructures Towards Electronic and Optoelectronic Device Applications II at the E-MRS Spring Meeting in SEMICONDUCTOR NANOSTRUCTURES TOWARDS ELECTRONIC AND OPTOELECTRONIC DEVICE APPLICATIONS II (SYMPOSIUM K, E-MRS 2009 SPRING MEETING), VOLUME: 6
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TITLE: Raman gain characterization in standard single mode optical fibres for optical simulation purposes
AUTHORS: Andre, PS ; Correia, R; Borghesi, LM; Teixeira, ALJ ; Nogueira, RN ; Lima, MJN; Kalinowski, HJ; Da Rocha, F; Pinto, JL ;
PUBLISHED: 2003, SOURCE: OPTICA APPLICATA, VOLUME: 33, ISSUE: 4
AUTHORS: Andre, PS ; Correia, R; Borghesi, LM; Teixeira, ALJ ; Nogueira, RN ; Lima, MJN; Kalinowski, HJ; Da Rocha, F; Pinto, JL ;
PUBLISHED: 2003, SOURCE: OPTICA APPLICATA, VOLUME: 33, ISSUE: 4
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ORCID73
TITLE: Ion beam studies of MBE grown GaN films on (111) silicon substrates Full Text
AUTHORS: Alves, E ; Barradas, NP ; Monteiro, T ; Correia, R; Kreissig, U;
PUBLISHED: 2002, SOURCE: 7th European Conference on Accelerators in Applied Research and Technology in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 188, ISSUE: 1-4
AUTHORS: Alves, E ; Barradas, NP ; Monteiro, T ; Correia, R; Kreissig, U;
PUBLISHED: 2002, SOURCE: 7th European Conference on Accelerators in Applied Research and Technology in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 188, ISSUE: 1-4
74
TITLE: Erratum: “Interpretation of double x-ray diffraction peaks from InGaN layers” [Appl. Phys. Lett. 79, 1432 (2001)] Full Text
AUTHORS: Pereira, S; Correia, MR; Pereira, E; O’Donnell, KP; Alves, E; Sequeira, AD; Franco, N;
PUBLISHED: 2002, SOURCE: Appl. Phys. Lett. - Applied Physics Letters, VOLUME: 80, ISSUE: 2
AUTHORS: Pereira, S; Correia, MR; Pereira, E; O’Donnell, KP; Alves, E; Sequeira, AD; Franco, N;
PUBLISHED: 2002, SOURCE: Appl. Phys. Lett. - Applied Physics Letters, VOLUME: 80, ISSUE: 2
75
TITLE: Indium distribution within InxGa1-xN epitaxial layers: A combined resonant Raman scattering and Rutherford backscattering study Full Text
AUTHORS: Correia, R; Pereira, S ; Pereira, E; Alves, E ; Gleize, J; Frandon, J; Renucci, MA;
PUBLISHED: 2001, SOURCE: 4th International Conference on Nitride Semiconductors (ICNS-4) in PHYSICA STATUS SOLIDI B-BASIC RESEARCH, VOLUME: 228, ISSUE: 1
AUTHORS: Correia, R; Pereira, S ; Pereira, E; Alves, E ; Gleize, J; Frandon, J; Renucci, MA;
PUBLISHED: 2001, SOURCE: 4th International Conference on Nitride Semiconductors (ICNS-4) in PHYSICA STATUS SOLIDI B-BASIC RESEARCH, VOLUME: 228, ISSUE: 1
76
TITLE: Doping of GaN by ion implantation
AUTHORS: Alves, EJ ; Liu, C; Da Silva, MF; Soares, JC ; Correia, R; Monteiro, T;
PUBLISHED: 2001, SOURCE: Microstructural Processes in Irradiated Materials-2000 in Materials Research Society Symposium - Proceedings, VOLUME: 650
AUTHORS: Alves, EJ ; Liu, C; Da Silva, MF; Soares, JC ; Correia, R; Monteiro, T;
PUBLISHED: 2001, SOURCE: Microstructural Processes in Irradiated Materials-2000 in Materials Research Society Symposium - Proceedings, VOLUME: 650
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ORCID77
TITLE: Optical and structural changes of fe implanted sapphire
AUTHORS: Marques, CP; Alves, EJ; McHargue, CJ; Da Silva, MF; Soares, JC; Correia, R; Soares, MJ; Monteiro, T;
PUBLISHED: 2001, SOURCE: Materials Research Society Symposium - Proceedings, VOLUME: 647
AUTHORS: Marques, CP; Alves, EJ; McHargue, CJ; Da Silva, MF; Soares, JC; Correia, R; Soares, MJ; Monteiro, T;
PUBLISHED: 2001, SOURCE: Materials Research Society Symposium - Proceedings, VOLUME: 647
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ORCID78
TITLE: Strain and compositional analysis of InGaN/GaN layers
AUTHORS: Pereira, S; Correia, MR; Pereira, E; Trager Cowan, C; Sweeney, F; Edwards, PR; O'Donnell, KP; Alves, E; Sequeira, AD; Franco, N;
PUBLISHED: 2001, SOURCE: Materials Research Society Symposium - Proceedings, VOLUME: 639
AUTHORS: Pereira, S; Correia, MR; Pereira, E; Trager Cowan, C; Sweeney, F; Edwards, PR; O'Donnell, KP; Alves, E; Sequeira, AD; Franco, N;
PUBLISHED: 2001, SOURCE: Materials Research Society Symposium - Proceedings, VOLUME: 639
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ORCID79
TITLE: Compositional pulling effects in (formula presented) layers: A combined depth-resolved cathodoluminescence and Rutherford backscattering/channeling study
AUTHORS: Pereira S.; Correia M.R.; Pereira E.; O’Donnell K.P.; Trager-Cowan C.; Sweeney F.; Alves E.;
PUBLISHED: 2001, SOURCE: Physical Review B - Condensed Matter and Materials Physics, VOLUME: 64, ISSUE: 20
AUTHORS: Pereira S.; Correia M.R.; Pereira E.; O’Donnell K.P.; Trager-Cowan C.; Sweeney F.; Alves E.;
PUBLISHED: 2001, SOURCE: Physical Review B - Condensed Matter and Materials Physics, VOLUME: 64, ISSUE: 20
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ORCID80
TITLE: Crystalline quality of InxGa1-xN samples assessed by SEM, Raman and PL
AUTHORS: Correia, R; Seitz, R; Gaspar, C; Monteiro, T; Pereira, E; Heuken, M; Schoen, O; Protzmann, H;
PUBLISHED: 1999, SOURCE: Conference on Microscopy of Semiconducting Materials in MICROSCOPY OF SEMICONDUCTING MATERIALS 1999, PROCEEDINGS, ISSUE: 164
AUTHORS: Correia, R; Seitz, R; Gaspar, C; Monteiro, T; Pereira, E; Heuken, M; Schoen, O; Protzmann, H;
PUBLISHED: 1999, SOURCE: Conference on Microscopy of Semiconducting Materials in MICROSCOPY OF SEMICONDUCTING MATERIALS 1999, PROCEEDINGS, ISSUE: 164
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