Maria Eduarda da Cunha Pereira
AuthID: R-000-B9J
241
TITLE: Raman study of the A(1)(LO) phonon in relaxed and pseudomorphic InGaN epilayers Full Text
AUTHORS: Correia, MR ; Pereira, S ; Pereira, E; Frandon, J; Alves, E ;
PUBLISHED: 2003, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 83, ISSUE: 23
AUTHORS: Correia, MR ; Pereira, S ; Pereira, E; Frandon, J; Alves, E ;
PUBLISHED: 2003, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 83, ISSUE: 23
242
TITLE: Tribological behaviour of CVD diamond films on steel substrates Full Text
AUTHORS: Silva, FJG ; Fernandes, AJS; Costa, FM ; Teixeira, V ; Baptista, APM ; Pereira, E;
PUBLISHED: 2003, SOURCE: 14th International Conference on Wear of Materials in WEAR, VOLUME: 255, ISSUE: 7-12
AUTHORS: Silva, FJG ; Fernandes, AJS; Costa, FM ; Teixeira, V ; Baptista, APM ; Pereira, E;
PUBLISHED: 2003, SOURCE: 14th International Conference on Wear of Materials in WEAR, VOLUME: 255, ISSUE: 7-12
243
TITLE: Strain and composition distributions in wurtzite InGaN/GaN layers extracted from x-ray reciprocal space mapping (vol 80, pg 3913, 2002) Full Text
AUTHORS: Pereira, S ; Correia, MR ; Pereira, E; O'Donnell, KP; Alves, E ; Sequeira, AD; Franco, N; Watson, IM; Deatcher, CJ;
PUBLISHED: 2002, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 81, ISSUE: 18
AUTHORS: Pereira, S ; Correia, MR ; Pereira, E; O'Donnell, KP; Alves, E ; Sequeira, AD; Franco, N; Watson, IM; Deatcher, CJ;
PUBLISHED: 2002, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 81, ISSUE: 18
244
TITLE: Depth profiling InGaN/GaN multiple quantum wells by Rutherford backscattering: The role of intermixing Full Text
AUTHORS: Pereira, S ; Pereira, E; Alves, E ; Barradas, NP ; O'Donnell, KP; Liu, C; Deatcher, CJ; Watson, IM;
PUBLISHED: 2002, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 81, ISSUE: 16
AUTHORS: Pereira, S ; Pereira, E; Alves, E ; Barradas, NP ; O'Donnell, KP; Liu, C; Deatcher, CJ; Watson, IM;
PUBLISHED: 2002, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 81, ISSUE: 16
245
TITLE: Microwave plasma chemical vapour deposition diamond nucleation on ferrous substrates with Ti and Cr interlayers Full Text
AUTHORS: Silva, FJG ; Baptista, APM ; Pereira, E; Teixeira, V ; Fan, QH; Fernandes, AJS; Costa, FM ;
PUBLISHED: 2002, SOURCE: DIAMOND AND RELATED MATERIALS, VOLUME: 11, ISSUE: 9
AUTHORS: Silva, FJG ; Baptista, APM ; Pereira, E; Teixeira, V ; Fan, QH; Fernandes, AJS; Costa, FM ;
PUBLISHED: 2002, SOURCE: DIAMOND AND RELATED MATERIALS, VOLUME: 11, ISSUE: 9
246
TITLE: Structural and optical properties of InGaN/GaN layers close to the critical layer thickness Full Text
AUTHORS: Pereira, S ; Correia, MR ; Pereira, E; Trager Cowan, C; Sweeney, F; O'Donnell, KP; Alves, E ; Franco, N; Sequeira, AD;
PUBLISHED: 2002, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 81, ISSUE: 7
AUTHORS: Pereira, S ; Correia, MR ; Pereira, E; Trager Cowan, C; Sweeney, F; O'Donnell, KP; Alves, E ; Franco, N; Sequeira, AD;
PUBLISHED: 2002, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 81, ISSUE: 7
247
TITLE: Preliminary investigations of infrared Er-related photoluminescence in ion-implanted In0.07Ga0.93N Full Text
AUTHORS: Correia, MR ; Pereira, S ; Cavaco, A; Pereira, E; Alves, E ;
PUBLISHED: 2002, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 80, ISSUE: 24
AUTHORS: Correia, MR ; Pereira, S ; Cavaco, A; Pereira, E; Alves, E ;
PUBLISHED: 2002, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 80, ISSUE: 24
248
TITLE: Splitting of X-ray diffraction and photoluminescence peaks in InGaN/GaN layers Full Text
AUTHORS: Pereira, S ; Correia, MR ; Pereira, E; O'Donnell, KP; Martin, RW; White, ME; Alves, E ; Sequeira, AD; Franco, N;
PUBLISHED: 2002, SOURCE: Spring Meeting of the European-Materials-Research-Society in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 93, ISSUE: 1-3
AUTHORS: Pereira, S ; Correia, MR ; Pereira, E; O'Donnell, KP; Martin, RW; White, ME; Alves, E ; Sequeira, AD; Franco, N;
PUBLISHED: 2002, SOURCE: Spring Meeting of the European-Materials-Research-Society in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 93, ISSUE: 1-3
249
TITLE: Strain relaxation and compositional analysis of InGaN/GaN layers by Rutherford backscattering Full Text
AUTHORS: Alves, E ; Pereira, S ; Correia, MR ; Pereira, E; Sequeira, AD; Franco, N;
PUBLISHED: 2002, SOURCE: 15th International Conference on Ion-Beam Analysis (IBA-15) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 190, ISSUE: 1-4
AUTHORS: Alves, E ; Pereira, S ; Correia, MR ; Pereira, E; Sequeira, AD; Franco, N;
PUBLISHED: 2002, SOURCE: 15th International Conference on Ion-Beam Analysis (IBA-15) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 190, ISSUE: 1-4
250
TITLE: Interpretation of double x-ray diffraction peaks from InGaN layers (vol 79, pg 1432, 2001) Full Text
AUTHORS: Pereira, S ; Correia, MR ; Pereira, E; O'Donnell, KP; Alves, E ; Sequeira, AD; Franco, N;
PUBLISHED: 2002, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 80, ISSUE: 2
AUTHORS: Pereira, S ; Correia, MR ; Pereira, E; O'Donnell, KP; Alves, E ; Sequeira, AD; Franco, N;
PUBLISHED: 2002, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 80, ISSUE: 2
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