Maria Eduarda da Cunha Pereira
AuthID: R-000-B9J
271
TITLE: Microelectrical characterisation of diamond films: an attempt to understand the structural influence on electrical transport phenomena Full Text
AUTHORS: Pereira, L; Pereira, E; Gomes, H ; Rodrigues, A ; Rees, A; Cremades, A; Piqueras, J;
PUBLISHED: 2000, SOURCE: 10th European Conference on Diamond, Diamond-Like Materials, Nitrides and Silicon Carbide (Diamond 1999) in DIAMOND AND RELATED MATERIALS, VOLUME: 9, ISSUE: 3-6
AUTHORS: Pereira, L; Pereira, E; Gomes, H ; Rodrigues, A ; Rees, A; Cremades, A; Piqueras, J;
PUBLISHED: 2000, SOURCE: 10th European Conference on Diamond, Diamond-Like Materials, Nitrides and Silicon Carbide (Diamond 1999) in DIAMOND AND RELATED MATERIALS, VOLUME: 9, ISSUE: 3-6
272
TITLE: Evaluation of residual stresses in chemical-vapor-deposited diamond films Full Text
AUTHORS: Fan, QH; Gracio, J ; Pereira, E;
PUBLISHED: 2000, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 87, ISSUE: 6
AUTHORS: Fan, QH; Gracio, J ; Pereira, E;
PUBLISHED: 2000, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 87, ISSUE: 6
273
TITLE: A comparative study of n-p GaN/SiC heterojunction and p-n 6H-SiC homojunction diodes
AUTHORS: Vacas, J; Lahreche, H; Monteiro, T ; Gaspar, C; Pereira, E; Brylinski, C; di Forte Poisson, MA;
PUBLISHED: 2000, SOURCE: International Conference on Silicon Carbide and Related Materials in SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, VOLUME: 338-3
AUTHORS: Vacas, J; Lahreche, H; Monteiro, T ; Gaspar, C; Pereira, E; Brylinski, C; di Forte Poisson, MA;
PUBLISHED: 2000, SOURCE: International Conference on Silicon Carbide and Related Materials in SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, VOLUME: 338-3
INDEXED IN: 
Scopus 
WOS
Scopus WOS274
TITLE: Polycrystalline diamond thin film as wide bandgap material: the optoelectronic behaviour and the relationship with the structure
AUTHORS: Pereira, L; Pereira, E; Rodrigues, A; Gomes, H ;
PUBLISHED: 2000, SOURCE: 11th International Semiconducting and Insulating Materials Conference (SIMC-XI) in SIMC-XI: 2000 INTERNATIONAL SEMICONDUCTING AND INSULATING MATERIALS CONFERENCE, PROCEEDINGS
AUTHORS: Pereira, L; Pereira, E; Rodrigues, A; Gomes, H ;
PUBLISHED: 2000, SOURCE: 11th International Semiconducting and Insulating Materials Conference (SIMC-XI) in SIMC-XI: 2000 INTERNATIONAL SEMICONDUCTING AND INSULATING MATERIALS CONFERENCE, PROCEEDINGS
INDEXED IN: WOS
WOS275
TITLE: Polycrystalline diamond thin film as wide bandgap material: The optoelectronic behaviour and the relationship with the structure
AUTHORS: Pereira, L; Pereira, E; Rodrigues, A; Gomes, H;
PUBLISHED: 2000, SOURCE: 11th International Semiconducting and Insulating Materials Conference, SIMC 2000 in IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC, VOLUME: 2000-January
AUTHORS: Pereira, L; Pereira, E; Rodrigues, A; Gomes, H;
PUBLISHED: 2000, SOURCE: 11th International Semiconducting and Insulating Materials Conference, SIMC 2000 in IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC, VOLUME: 2000-January
INDEXED IN: Scopus 
CrossRef
Scopus CrossRef276
TITLE: A new surface pretreatment approach for enhancing diamond nucleation
AUTHORS: Fan, QH; Fernandes, A; Pereira, E; Gracio, J;
PUBLISHED: 1999, SOURCE: JOURNAL OF MATERIALS RESEARCH, VOLUME: 14, ISSUE: 12
AUTHORS: Fan, QH; Fernandes, A; Pereira, E; Gracio, J;
PUBLISHED: 1999, SOURCE: JOURNAL OF MATERIALS RESEARCH, VOLUME: 14, ISSUE: 12
INDEXED IN: WOS CrossRef
WOS CrossRef277
TITLE: Electrical and photoelectronic properties of hexagonal GaN Full Text
AUTHORS: Seitz, R; Gaspar, C; Monteiro, T ; Pereira, L; Pereira, E; Schon, O; Heuken, M;
PUBLISHED: 1999, SOURCE: 3rd International Conference on Nitride Semiconductors (ICNS 99) in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, VOLUME: 176, ISSUE: 1
AUTHORS: Seitz, R; Gaspar, C; Monteiro, T ; Pereira, L; Pereira, E; Schon, O; Heuken, M;
PUBLISHED: 1999, SOURCE: 3rd International Conference on Nitride Semiconductors (ICNS 99) in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, VOLUME: 176, ISSUE: 1
278
TITLE: Strain relaxation in GaN films as a function of growth direction and buffer layer measured by Raman spectroscopy Full Text
AUTHORS: Seitz, R; Monteiro, T ; Pereira, E; Di Forte Poisson, M;
PUBLISHED: 1999, SOURCE: 3rd International Conference on Nitride Semiconductors (ICNS 99) in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, VOLUME: 176, ISSUE: 1
AUTHORS: Seitz, R; Monteiro, T ; Pereira, E; Di Forte Poisson, M;
PUBLISHED: 1999, SOURCE: 3rd International Conference on Nitride Semiconductors (ICNS 99) in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, VOLUME: 176, ISSUE: 1
INDEXED IN: WOS CrossRef
WOS CrossRef279
TITLE: Comparison of the adhesion of diamond coatings using indentation tests and micro-Raman spectroscopy Full Text
AUTHORS: Fan, QH; Gracio, J ; Pereira, E;
PUBLISHED: 1999, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 86, ISSUE: 10
AUTHORS: Fan, QH; Gracio, J ; Pereira, E;
PUBLISHED: 1999, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 86, ISSUE: 10
280
TITLE: Adhesion of diamond coatings on steel and copper with a titanium interlayer Full Text
AUTHORS: Fan, QH; Fernandes, A; Pereira, E; Gracio, J ;
PUBLISHED: 1999, SOURCE: 6th International Conference on New Diamond Science and Technology (ICNDST-6) in DIAMOND AND RELATED MATERIALS, VOLUME: 8, ISSUE: 8-9
AUTHORS: Fan, QH; Fernandes, A; Pereira, E; Gracio, J ;
PUBLISHED: 1999, SOURCE: 6th International Conference on New Diamond Science and Technology (ICNDST-6) in DIAMOND AND RELATED MATERIALS, VOLUME: 8, ISSUE: 8-9
