Pedro Miguel Cândido Barquinha
AuthID: R-000-EY1
151
TITLE: Self-Rechargeable Paper Thin-Film Batteries: Performance and Applications Full Text
AUTHORS: Ferreira, I; Bras, B; Correia, N; Barquinha, P; Fortunato, E; Martins, R;
PUBLISHED: 2010, SOURCE: JOURNAL OF DISPLAY TECHNOLOGY, VOLUME: 6, ISSUE: 8
AUTHORS: Ferreira, I; Bras, B; Correia, N; Barquinha, P; Fortunato, E; Martins, R;
PUBLISHED: 2010, SOURCE: JOURNAL OF DISPLAY TECHNOLOGY, VOLUME: 6, ISSUE: 8
152
TITLE: Self-Rechargeable Paper Thin-Film Batteries: Performance and Applications Full Text
AUTHORS: Ferreira, I; Bras, B; Correia, N; Barquinha, P; Fortunato, E; Martins, R;
PUBLISHED: 2010, SOURCE: JOURNAL OF DISPLAY TECHNOLOGY, VOLUME: 6, ISSUE: 8
AUTHORS: Ferreira, I; Bras, B; Correia, N; Barquinha, P; Fortunato, E; Martins, R;
PUBLISHED: 2010, SOURCE: JOURNAL OF DISPLAY TECHNOLOGY, VOLUME: 6, ISSUE: 8
INDEXED IN: 
WOS
WOS IN MY: 
ORCID
ORCID153
TITLE: High Mobility a-IGO Films Produced at Room Temperature and Their Application in TFTs
AUTHORS: Goncalves, G; Barquinha, P; Pereira, L ; Franco, N; Alves, E ; Martins, R ; Fortunato, E ;
PUBLISHED: 2010, SOURCE: ELECTROCHEMICAL AND SOLID STATE LETTERS, VOLUME: 13, ISSUE: 1
AUTHORS: Goncalves, G; Barquinha, P; Pereira, L ; Franco, N; Alves, E ; Martins, R ; Fortunato, E ;
PUBLISHED: 2010, SOURCE: ELECTROCHEMICAL AND SOLID STATE LETTERS, VOLUME: 13, ISSUE: 1
INDEXED IN: WOS
WOS IN MY: ORCID
ORCID154
TITLE: P-202L: Late-news poster: Long-term stability of oxide semiconductor-based TFTs Full Text
AUTHORS: Barquinha, P; Pereira, L ; Goncalves, G; Martins, R ; Fortunato, E ;
PUBLISHED: 2010, SOURCE: 48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010 in 48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010, VOLUME: 3, ISSUE: 1
AUTHORS: Barquinha, P; Pereira, L ; Goncalves, G; Martins, R ; Fortunato, E ;
PUBLISHED: 2010, SOURCE: 48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010 in 48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010, VOLUME: 3, ISSUE: 1
155
TITLE: P-202L: Late-news poster: Long-term stability of oxide semiconductor-based TFTs
AUTHORS: Barquinha, P; Pereira, L; Goncalves, G; Martins, R; Fortunato, E;
PUBLISHED: 2010, SOURCE: Digest of Technical Papers - SID International Symposium, VOLUME: 41 1
AUTHORS: Barquinha, P; Pereira, L; Goncalves, G; Martins, R; Fortunato, E;
PUBLISHED: 2010, SOURCE: Digest of Technical Papers - SID International Symposium, VOLUME: 41 1
INDEXED IN: 
Scopus
Scopus IN MY: ORCID
ORCID156
TITLE: Erratum: “Thin-film transistors based on p-type Cu[sub 2]O thin films produced at room temperature” [Appl. Phys. Lett. 96, 192102 (2010)] Full Text
AUTHORS: Elvira Fortunato; Vitor Figueiredo; Pedro Barquinha; Elangovan Elamurugu; Raquel Barros; Gonçalo Gonçalves; Sang-Hee Ko Park; Chi-Sun Hwang; Rodrigo Martins;
PUBLISHED: 2010, SOURCE: Appl. Phys. Lett. - Applied Physics Letters, VOLUME: 96, ISSUE: 23
AUTHORS: Elvira Fortunato; Vitor Figueiredo; Pedro Barquinha; Elangovan Elamurugu; Raquel Barros; Gonçalo Gonçalves; Sang-Hee Ko Park; Chi-Sun Hwang; Rodrigo Martins;
PUBLISHED: 2010, SOURCE: Appl. Phys. Lett. - Applied Physics Letters, VOLUME: 96, ISSUE: 23
157
TITLE: <title>Floating gate memory paper transistor</title>
AUTHORS: Martins, R; Pereira, L; Barquinha, P; Correia, N; Gonçalves, G; Ferreira, I; Dias, C; Fortunato, E;
PUBLISHED: 2010, SOURCE: Oxide-based Materials and Devices
AUTHORS: Martins, R; Pereira, L; Barquinha, P; Correia, N; Gonçalves, G; Ferreira, I; Dias, C; Fortunato, E;
PUBLISHED: 2010, SOURCE: Oxide-based Materials and Devices
158
TITLE: High Mobility a-IGO Films Produced at Room Temperature and Their Application in TFTs
AUTHORS: Gonçalves, G; Barquinha, P; Pereira, L; Franco, N; Alves, E; Martins, R; Fortunato, E;
PUBLISHED: 2010, SOURCE: Electrochemical and Solid-State Letters - Electrochem. Solid-State Lett., VOLUME: 13, ISSUE: 1
AUTHORS: Gonçalves, G; Barquinha, P; Pereira, L; Franco, N; Alves, E; Martins, R; Fortunato, E;
PUBLISHED: 2010, SOURCE: Electrochemical and Solid-State Letters - Electrochem. Solid-State Lett., VOLUME: 13, ISSUE: 1
159
TITLE: Room-Temperature Cosputtered HfO2-Al2O3 Multicomponent Gate Dielectrics
AUTHORS: Pei, ZL; Pereira, L ; Goncalves, G; Barquinha, P; Franco, N; Alves, E ; Rego, AMB ; Martins, R; Fortunato, E ;
PUBLISHED: 2009, SOURCE: ELECTROCHEMICAL AND SOLID STATE LETTERS, VOLUME: 12, ISSUE: 10
AUTHORS: Pei, ZL; Pereira, L ; Goncalves, G; Barquinha, P; Franco, N; Alves, E ; Rego, AMB ; Martins, R; Fortunato, E ;
PUBLISHED: 2009, SOURCE: ELECTROCHEMICAL AND SOLID STATE LETTERS, VOLUME: 12, ISSUE: 10
160
TITLE: <title>Paper field effect transistor</title>
AUTHORS: Fortunato, E; Nuno Correia; Pedro Barquinha; Cláudia Costa; Luís Pereira; Gonçalo Gonçalves; Rodrigo Martins;
PUBLISHED: 2009, SOURCE: Zinc Oxide Materials and Devices IV
AUTHORS: Fortunato, E; Nuno Correia; Pedro Barquinha; Cláudia Costa; Luís Pereira; Gonçalo Gonçalves; Rodrigo Martins;
PUBLISHED: 2009, SOURCE: Zinc Oxide Materials and Devices IV
