21
TITLE: Impact of the Input Baseband Terminations on the Efficiency of Wideband Power Amplifiers under Concurrent Band Operation
AUTHORS: Barros, DR; Nunes, LC; Cabral, PM; Pedro, JC ;
PUBLISHED: 2019, SOURCE: IEEE Transactions on Microwave Theory and Techniques, VOLUME: 67, ISSUE: 12
INDEXED IN: Scopus CrossRef: 10
IN MY: ORCID
22
TITLE: Theoretical Analysis of Nonlinear Amplification Effects in Massive MIMO Systems
AUTHORS: Teodoro, S; Silva, A; Dinis, R; Barradas, FM; Cabral, PM; Gameiro, A;
PUBLISHED: 2019, SOURCE: IEEE ACCESS, VOLUME: 7
INDEXED IN: Scopus WOS CrossRef: 28
IN MY: ORCID
23
TITLE: Magnetless RF Isolator Design Using Grounded Transistors
AUTHORS: Barradas, FM; Cunha, TR; Cabral, PM; Pedro, JC ;
PUBLISHED: 2018, SOURCE: IEEE/MTT-S International Microwave Symposium in 2018 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM - IMS, VOLUME: 2018-June
INDEXED IN: Scopus WOS CrossRef: 2
IN MY: ORCID
24
TITLE: Efficiency Degradation in Wideband Power Amplifiers
AUTHORS: Nunes, LC; Barros, DR; Cabral, PM; Pedro, JC ;
PUBLISHED: 2018, SOURCE: IEEE/MTT-S International Microwave Symposium in 2018 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM - IMS, VOLUME: 2018-June
INDEXED IN: Scopus WOS CrossRef: 2
IN MY: ORCID
25
TITLE: Pulsed I/V and S-parameters measurement system for isodynamic characterization of power GaN HEMT transistors
AUTHORS: Goncalves, CF; Nunes, LC; Cabral, PM; Pedro, JC ;
PUBLISHED: 2018, SOURCE: INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING, VOLUME: 28, ISSUE: 8
INDEXED IN: Scopus WOS CrossRef: 15
IN MY: ORCID
26
TITLE: A Simple Method to Extract Trapping Time Constants of GaN HEMTs
AUTHORS: Nunes, LC; Gomes, JL; Cabral, PM; Pedro, JC ;
PUBLISHED: 2018, SOURCE: IEEE/MTT-S International Microwave Symposium in 2018 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM - IMS, VOLUME: 2018-June
INDEXED IN: Scopus WOS CrossRef: 13
IN MY: ORCID
27
TITLE: Efficiency Degradation Analysis in Wideband Power Amplifiers
AUTHORS: Nunes, LC; Barros, DR; Cabral, PM; Pedro, JC ;
PUBLISHED: 2018, SOURCE: IEEE-MTT-Society International Microwave Symposium (IMS) in IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOLUME: 66, ISSUE: 12
INDEXED IN: Scopus WOS CrossRef: 13
IN MY: ORCID
28
TITLE: Trapping behavior of GaN HEMTs and its implications on class B PA bias point selection. Trapping Behavior of GaN HEMTs-Implications on Bias Point Selection  Full Text
AUTHORS: Cabral, PM; Nunes, LC; Ressurreicao, T; Pedro, JC ;
PUBLISHED: 2017, SOURCE: INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS, VOLUME: 30, ISSUE: 1
INDEXED IN: Scopus WOS CrossRef: 1
IN MY: ORCID
29
TITLE: Compensation of Long-Term Memory Effects on GaN HEMT-Based Power Amplifiers
AUTHORS: Barradas, FM; Nunes, LC; Cunha, TR; Lavrador, PM; Cabral, PM; Pedro, JC ;
PUBLISHED: 2017, SOURCE: IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOLUME: 65, ISSUE: 9
INDEXED IN: Scopus WOS CrossRef: 16
IN MY: ORCID
30
TITLE: Modeling PA linearity and efficiency in MIMO transmitters
AUTHORS: Barradas, FM; Cunha, TR; Cabral, PM; Pedro, JC ;
PUBLISHED: 2017, SOURCE: IEEE-Microwave-Theory-and-Techniques-Society International Microwave Symposium (IMS) / Session on Women in Microwaves (WIM) in 2017 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS)
INDEXED IN: Scopus WOS CrossRef: 3
IN MY: ORCID
Page 3 of 7. Total results: 63.