Reinhard Horst Schwarz


AuthID: R-000-F9H

Publications Awaiting Confirmation

61
TITLE: Steady-state photocarrier grating technique applied to a-Si:H thin film transistors
AUTHORS: Wang, F; Reissner, M; Fischer, T; Grebner, S; Schwarz, R;
PUBLISHED: 1993, SOURCE: Proceedings of the MRS Spring Meeting in Materials Research Society Symposium Proceedings, VOLUME: 297
INDEXED IN: Scopus
IN MY: ORCID
62
TITLE: CPM-characterization of light and current stressed a-Si:H diodes with nin, pip, and pin structures  Full Text
AUTHORS: Ostendorf, HC; Schwarz, R; Kusian, W; Kruhler, W;
PUBLISHED: 1993, SOURCE: Proceedings of the 23rd IEEE Photovoltaic Specialists Conference in Conference Record of the IEEE Photovoltaic Specialists Conference
INDEXED IN: Scopus
IN MY: ORCID
63
TITLE: Change transport along and across a-Si:H/a-SiC:H multilayers  Full Text
AUTHORS: Arlauskas, K; Juska, G; Schwarz, R; Fischer, T;
PUBLISHED: 1993, SOURCE: Journal of Non-Crystalline Solids, VOLUME: 164-166, ISSUE: PART 2
INDEXED IN: Scopus
IN MY: ORCID
64
TITLE: Characterization of optoelectronic properties of a-Si1-xCx:H films  Full Text
AUTHORS: Wang, F; Schwarz, R;
PUBLISHED: 1993, SOURCE: Journal of Non-Crystalline Solids, VOLUME: 164-166, ISSUE: PART 2
INDEXED IN: Scopus
IN MY: ORCID
65
TITLE: Light and current degradation of a-Si:H pin, nin and pip diodes detected with CPM  Full Text
AUTHORS: Ostendorf, HC; Kusian, W; Kruhler, W; Schwarz, R;
PUBLISHED: 1993, SOURCE: Journal of Non-Crystalline Solids, VOLUME: 164-166, ISSUE: PART 2
INDEXED IN: Scopus
IN MY: ORCID
66
TITLE: Fermi level dependence of the ambipolar diffusion length in amorphous silicon thin film transistors  Full Text
AUTHORS: Schwarz, R; Wang, F; Reissner, M;
PUBLISHED: 1993, SOURCE: Applied Physics Letters, VOLUME: 63, ISSUE: 8
INDEXED IN: Scopus CrossRef
IN MY: ORCID
67
TITLE: Temperature dependence of radiative and non-radiative lifetimes in hydrogenated amorphous silicon  Full Text
AUTHORS: Muschik, T; Schwarz, R;
PUBLISHED: 1993, SOURCE: Journal of Non-Crystalline Solids, VOLUME: 164-166, ISSUE: PART 1
INDEXED IN: Scopus
IN MY: ORCID
68
TITLE: High-temperature annealing behavior of μτ products of electrons and holes in a-Si:H  Full Text
AUTHORS: Wang, F; Schwarz, R;
PUBLISHED: 1992, SOURCE: Journal of Applied Physics, VOLUME: 71, ISSUE: 2
INDEXED IN: Scopus CrossRef
IN MY: ORCID
69
TITLE: Interdiffusion in amorphous Si/SiC multilayers  Full Text
AUTHORS: Kolodzey, J; Hanesch, P; Fischer, T; Schwarz, R; Zorn, G; Gobel, H;
PUBLISHED: 1992, SOURCE: Materials Science and Engineering B, VOLUME: 11, ISSUE: 1-4
INDEXED IN: Scopus
IN MY: ORCID
70
TITLE: Electron and hole μτ-products in a-Si:H/a-SiNχ:H multilayers  Full Text
AUTHORS: Wang, F; Schwarz, R; Beaudoin, M; Meunier, M;
PUBLISHED: 1992, SOURCE: Superlattices and Microstructures, VOLUME: 12, ISSUE: 4
INDEXED IN: Scopus
IN MY: ORCID
Page 7 of 11. Total results: 106.

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