Sérgio Manuel de Sousa Pereira
AuthID: R-000-GF5
61
TITLE: Investigations of p-type signal for ZnO thin films grown on (100) GaAs substrates by pulsed laser deposition Full Text
AUTHORS: Rogers, DJ; Teherani, FH; Monteiro, T; Soares, M ; Neves, A ; Carmo, M; Pereira, S; Correia, MR ; Lusson, A; Alves, E ; Barradas, NP ; Morrod, JK; Prior, KA; Kung, P; Yasan, A; Razeghi, M;
PUBLISHED: 2006, SOURCE: 12th International Conference on II-VI Compounds in Physica Status Solidi C - Current Topics in Solid State Physics, Vol 3, No 4, VOLUME: 3, ISSUE: 4
AUTHORS: Rogers, DJ; Teherani, FH; Monteiro, T; Soares, M ; Neves, A ; Carmo, M; Pereira, S; Correia, MR ; Lusson, A; Alves, E ; Barradas, NP ; Morrod, JK; Prior, KA; Kung, P; Yasan, A; Razeghi, M;
PUBLISHED: 2006, SOURCE: 12th International Conference on II-VI Compounds in Physica Status Solidi C - Current Topics in Solid State Physics, Vol 3, No 4, VOLUME: 3, ISSUE: 4
62
TITLE: Comment on "Direct evidence of nanocluster-induced luminescence in InGaN epifilms" [Appl. Phys. Lett. 86, 021911 (2005)] Full Text
AUTHORS: Pereira, S; Correia, MR ; Alves, E ; O'Donnell, KP; Chang, HJ; Chen, CH; Chen, YF; Lin, TY; Chen, LC; Chen, KH; Lan, ZH;
PUBLISHED: 2005, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 87, ISSUE: 13
AUTHORS: Pereira, S; Correia, MR ; Alves, E ; O'Donnell, KP; Chang, HJ; Chen, CH; Chen, YF; Lin, TY; Chen, LC; Chen, KH; Lan, ZH;
PUBLISHED: 2005, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 87, ISSUE: 13
63
TITLE: Role of annealing environment on the performances of large area ITO films produced by rf magnetron sputtering Full Text
AUTHORS: Canhola, P; Martins, N; Raniero, L; Pereira, S; Fortunato, E ; Ferreira, I ; Martins, R ;
PUBLISHED: 2005, SOURCE: 8th International Conference on Polycrystalline Semiconductors in THIN SOLID FILMS, VOLUME: 487, ISSUE: 1-2
AUTHORS: Canhola, P; Martins, N; Raniero, L; Pereira, S; Fortunato, E ; Ferreira, I ; Martins, R ;
PUBLISHED: 2005, SOURCE: 8th International Conference on Polycrystalline Semiconductors in THIN SOLID FILMS, VOLUME: 487, ISSUE: 1-2
64
TITLE: Spectral response of large area amorphous silicon solar cells
AUTHORS: Raniero, L; Martins, N; Canhola, P; Pereira, S; Ferreira, I ; Fortunato, E ; Martins, R ;
PUBLISHED: 2004, SOURCE: HIGH TEMPERATURE MATERIAL PROCESSES, VOLUME: 8, ISSUE: 2
AUTHORS: Raniero, L; Martins, N; Canhola, P; Pereira, S; Ferreira, I ; Fortunato, E ; Martins, R ;
PUBLISHED: 2004, SOURCE: HIGH TEMPERATURE MATERIAL PROCESSES, VOLUME: 8, ISSUE: 2
65
TITLE: Occurrence of 'accidental' InN quantum dots in indium gallium nitride/gallium nitride heterostructures
AUTHORS: O'Donnell, KP; Martin, RW; White, ME; Pereira, S; Mosselmans, JFW; Tobin, MJ; Grandjean, N; Damilano, B;
PUBLISHED: 2003, SOURCE: Quantum Confined Semiconductor Nanostructures in Materials Research Society Symposium - Proceedings, VOLUME: 737
AUTHORS: O'Donnell, KP; Martin, RW; White, ME; Pereira, S; Mosselmans, JFW; Tobin, MJ; Grandjean, N; Damilano, B;
PUBLISHED: 2003, SOURCE: Quantum Confined Semiconductor Nanostructures in Materials Research Society Symposium - Proceedings, VOLUME: 737
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ORCID66
TITLE: In K-edge extended X-ray absorption fine structure of InGaN epilayers and quantum boxes Full Text
AUTHORS: O'Donnell, KP; White, ME; Pereira, S; Mosselmans, JFW; Grandjean, N; Damilano, B; Massies, J;
PUBLISHED: 2002, SOURCE: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, VOLUME: 93, ISSUE: 1-3
AUTHORS: O'Donnell, KP; White, ME; Pereira, S; Mosselmans, JFW; Grandjean, N; Damilano, B; Massies, J;
PUBLISHED: 2002, SOURCE: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, VOLUME: 93, ISSUE: 1-3
67
TITLE: Comment on: Low Stokes shift in thick and homogeneous InGaN epilayers(Appl. Phys. Lett. (2002) 80 550))
AUTHORS: O'Donnell, KP; Martin, RW; Pereira, S;
PUBLISHED: 2002, SOURCE: Applied Physics Letters, VOLUME: 81, ISSUE: 7
AUTHORS: O'Donnell, KP; Martin, RW; Pereira, S;
PUBLISHED: 2002, SOURCE: Applied Physics Letters, VOLUME: 81, ISSUE: 7
INDEXED IN: Scopus
Scopus68
TITLE: Erratum: “Interpretation of double x-ray diffraction peaks from InGaN layers” [Appl. Phys. Lett. 79, 1432 (2001)] Full Text
AUTHORS: Pereira, S; Correia, MR; Pereira, E; O’Donnell, KP; Alves, E; Sequeira, AD; Franco, N;
PUBLISHED: 2002, SOURCE: Appl. Phys. Lett. - Applied Physics Letters, VOLUME: 80, ISSUE: 2
AUTHORS: Pereira, S; Correia, MR; Pereira, E; O’Donnell, KP; Alves, E; Sequeira, AD; Franco, N;
PUBLISHED: 2002, SOURCE: Appl. Phys. Lett. - Applied Physics Letters, VOLUME: 80, ISSUE: 2
69
TITLE: Comment on “Low Stokes shift in thick and homogeneous InGaN epilayers” [Appl. Phys. Lett. 80, 550 (2002)] Full Text
AUTHORS: O’Donnell, KP; Martin, RW; Pereira, S;
PUBLISHED: 2002, SOURCE: Appl. Phys. Lett. - Applied Physics Letters, VOLUME: 81, ISSUE: 7
AUTHORS: O’Donnell, KP; Martin, RW; Pereira, S;
PUBLISHED: 2002, SOURCE: Appl. Phys. Lett. - Applied Physics Letters, VOLUME: 81, ISSUE: 7
70
TITLE: Autoregulation allows Escherichia coli RNase E to adjust continuously its synthesis to that of its substrates. Synthesis of RNase E fits that of its substrates Full Text
AUTHORS: Sousa, S; Marchand, I; Dreyfus, M;
PUBLISHED: 2001, SOURCE: MOLECULAR MICROBIOLOGY, VOLUME: 42, ISSUE: 3
AUTHORS: Sousa, S; Marchand, I; Dreyfus, M;
PUBLISHED: 2001, SOURCE: MOLECULAR MICROBIOLOGY, VOLUME: 42, ISSUE: 3
