Sérgio Manuel de Sousa Pereira
AuthID: R-000-GF5
61
TITLE: Plasmonic Enhancement in InGaN/GaN MQW System with Au Nanoparticles
AUTHORS: Llopis, A; Lin, J; Neogi, A; Pereira, SMS;
PUBLISHED: 2009, SOURCE: Nanotech 2009 Conference in NANOTECH CONFERENCE & EXPO 2009, VOL 1, TECHNICAL PROCEEDINGS: NANOTECHNOLOGY 2009: FABRICATION, PARTICLES, CHARACTERIZATION, MEMS, ELECTRONICS AND PHOTONICS, VOLUME: 1
AUTHORS: Llopis, A; Lin, J; Neogi, A; Pereira, SMS;
PUBLISHED: 2009, SOURCE: Nanotech 2009 Conference in NANOTECH CONFERENCE & EXPO 2009, VOL 1, TECHNICAL PROCEEDINGS: NANOTECHNOLOGY 2009: FABRICATION, PARTICLES, CHARACTERIZATION, MEMS, ELECTRONICS AND PHOTONICS, VOLUME: 1
INDEXED IN: 
Scopus 
WOS
Scopus WOS IN MY: 
ORCID
ORCID62
TITLE: Efficient dipole-dipole coupling of Mott-Wannier and Frenkel excitons in (Ga,In)N quantum well/polyfluorene semiconductor heterostructures (vol 76, art no 035344, 2007)
AUTHORS: Itskos, G; Heliotis, G; Lagoudakis, PG; Lupton, J; Barradas, NP; Alves, E; Pereira, S; Watson, IM; Dawson, MD; Feldmann, J; Murray, R; Bradley, DDC;
PUBLISHED: 2008, SOURCE: PHYSICAL REVIEW B, VOLUME: 77, ISSUE: 7
AUTHORS: Itskos, G; Heliotis, G; Lagoudakis, PG; Lupton, J; Barradas, NP; Alves, E; Pereira, S; Watson, IM; Dawson, MD; Feldmann, J; Murray, R; Bradley, DDC;
PUBLISHED: 2008, SOURCE: PHYSICAL REVIEW B, VOLUME: 77, ISSUE: 7
63
TITLE: Erratum: Efficient dipole-dipole coupling of Mott-Wannier and Frenkel excitons in (Ga,In)N quantum well/polyfluorene semiconductor heterostructures (Physical Review B - Condensed Matter and Materials Physics (2007) 76, (035344))
AUTHORS: Itskos, G; Heliotis, G; Lagoudakis, PG; Lupton, J; Barradas, NP ; Alves, E ; Pereira, S; Watson, IM; Dawson, MD; Feldmann, J; Murray, R; Bradley, DDC;
PUBLISHED: 2008, SOURCE: Physical Review B - Condensed Matter and Materials Physics, VOLUME: 77, ISSUE: 7
AUTHORS: Itskos, G; Heliotis, G; Lagoudakis, PG; Lupton, J; Barradas, NP ; Alves, E ; Pereira, S; Watson, IM; Dawson, MD; Feldmann, J; Murray, R; Bradley, DDC;
PUBLISHED: 2008, SOURCE: Physical Review B - Condensed Matter and Materials Physics, VOLUME: 77, ISSUE: 7
INDEXED IN: Scopus
Scopus64
TITLE: Investigations of p-type signal for ZnO thin films grown on (100) GaAs substrates by pulsed laser deposition Full Text
AUTHORS: Rogers, DJ; Teherani, FH; Monteiro, T; Soares, M ; Neves, A ; Carmo, M; Pereira, S; Correia, MR ; Lusson, A; Alves, E ; Barradas, NP ; Morrod, JK; Prior, KA; Kung, P; Yasan, A; Razeghi, M;
PUBLISHED: 2006, SOURCE: 12th International Conference on II-VI Compounds in Physica Status Solidi C - Current Topics in Solid State Physics, Vol 3, No 4, VOLUME: 3, ISSUE: 4
AUTHORS: Rogers, DJ; Teherani, FH; Monteiro, T; Soares, M ; Neves, A ; Carmo, M; Pereira, S; Correia, MR ; Lusson, A; Alves, E ; Barradas, NP ; Morrod, JK; Prior, KA; Kung, P; Yasan, A; Razeghi, M;
PUBLISHED: 2006, SOURCE: 12th International Conference on II-VI Compounds in Physica Status Solidi C - Current Topics in Solid State Physics, Vol 3, No 4, VOLUME: 3, ISSUE: 4
65
TITLE: Comment on "Direct evidence of nanocluster-induced luminescence in InGaN epifilms" [Appl. Phys. Lett. 86, 021911 (2005)] Full Text
AUTHORS: Pereira, S; Correia, MR ; Alves, E ; O'Donnell, KP; Chang, HJ; Chen, CH; Chen, YF; Lin, TY; Chen, LC; Chen, KH; Lan, ZH;
PUBLISHED: 2005, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 87, ISSUE: 13
AUTHORS: Pereira, S; Correia, MR ; Alves, E ; O'Donnell, KP; Chang, HJ; Chen, CH; Chen, YF; Lin, TY; Chen, LC; Chen, KH; Lan, ZH;
PUBLISHED: 2005, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 87, ISSUE: 13
66
TITLE: Role of annealing environment on the performances of large area ITO films produced by rf magnetron sputtering Full Text
AUTHORS: Canhola, P; Martins, N; Raniero, L; Pereira, S; Fortunato, E ; Ferreira, I ; Martins, R ;
PUBLISHED: 2005, SOURCE: 8th International Conference on Polycrystalline Semiconductors in THIN SOLID FILMS, VOLUME: 487, ISSUE: 1-2
AUTHORS: Canhola, P; Martins, N; Raniero, L; Pereira, S; Fortunato, E ; Ferreira, I ; Martins, R ;
PUBLISHED: 2005, SOURCE: 8th International Conference on Polycrystalline Semiconductors in THIN SOLID FILMS, VOLUME: 487, ISSUE: 1-2
67
TITLE: Spectral response of large area amorphous silicon solar cells
AUTHORS: Raniero, L; Martins, N; Canhola, P; Pereira, S; Ferreira, I ; Fortunato, E ; Martins, R ;
PUBLISHED: 2004, SOURCE: HIGH TEMPERATURE MATERIAL PROCESSES, VOLUME: 8, ISSUE: 2
AUTHORS: Raniero, L; Martins, N; Canhola, P; Pereira, S; Ferreira, I ; Fortunato, E ; Martins, R ;
PUBLISHED: 2004, SOURCE: HIGH TEMPERATURE MATERIAL PROCESSES, VOLUME: 8, ISSUE: 2
68
TITLE: Occurrence of 'accidental' InN quantum dots in indium gallium nitride/gallium nitride heterostructures
AUTHORS: O'Donnell, KP; Martin, RW; White, ME; Pereira, S; Mosselmans, JFW; Tobin, MJ; Grandjean, N; Damilano, B;
PUBLISHED: 2003, SOURCE: Quantum Confined Semiconductor Nanostructures in Materials Research Society Symposium - Proceedings, VOLUME: 737
AUTHORS: O'Donnell, KP; Martin, RW; White, ME; Pereira, S; Mosselmans, JFW; Tobin, MJ; Grandjean, N; Damilano, B;
PUBLISHED: 2003, SOURCE: Quantum Confined Semiconductor Nanostructures in Materials Research Society Symposium - Proceedings, VOLUME: 737
INDEXED IN: Scopus
Scopus IN MY: ORCID
ORCID69
TITLE: In K-edge extended X-ray absorption fine structure of InGaN epilayers and quantum boxes Full Text
AUTHORS: O'Donnell, KP; White, ME; Pereira, S; Mosselmans, JFW; Grandjean, N; Damilano, B; Massies, J;
PUBLISHED: 2002, SOURCE: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, VOLUME: 93, ISSUE: 1-3
AUTHORS: O'Donnell, KP; White, ME; Pereira, S; Mosselmans, JFW; Grandjean, N; Damilano, B; Massies, J;
PUBLISHED: 2002, SOURCE: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, VOLUME: 93, ISSUE: 1-3
70
TITLE: Comment on: Low Stokes shift in thick and homogeneous InGaN epilayers(Appl. Phys. Lett. (2002) 80 550))
AUTHORS: O'Donnell, KP; Martin, RW; Pereira, S;
PUBLISHED: 2002, SOURCE: Applied Physics Letters, VOLUME: 81, ISSUE: 7
AUTHORS: O'Donnell, KP; Martin, RW; Pereira, S;
PUBLISHED: 2002, SOURCE: Applied Physics Letters, VOLUME: 81, ISSUE: 7
INDEXED IN: Scopus
Scopus