61
TITLE: Effect of AlN content on the lattice site location of terbium ions in AlxGa1-xN compounds  Full Text
AUTHORS: Fialho, M; Rodrigues, J; Magalhaes, S; Correia, MR; Monteiro, T; Lorenz, K; Alves, E;
PUBLISHED: 2016, SOURCE: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, VOLUME: 31, ISSUE: 3
INDEXED IN: Scopus WOS CrossRef: 4
IN MY: ORCID
62
TITLE: Niobium oxides and niobates physical properties: Review and prospects  Full Text
AUTHORS: Nico, C; Monteiro, T; Graca, MPF;
PUBLISHED: 2016, SOURCE: PROGRESS IN MATERIALS SCIENCE, VOLUME: 80
INDEXED IN: Scopus WOS CrossRef: 62
IN MY: ORCID
64
TITLE: Exploring the potential of laser assisted flow deposition grown ZnO for photovoltaic applications  Full Text
AUTHORS: Rodrigues, J; Cerqueira, AFR; Sousa, MG; Santos, NF; Pimentel, A; Fortunato, E; da Cunha, AF; Monteiro, T; Costa, FM;
PUBLISHED: 2016, SOURCE: MATERIALS CHEMISTRY AND PHYSICS, VOLUME: 177
INDEXED IN: Scopus WOS CrossRef: 7
IN MY: ORCID
65
TITLE: Analysis of the Tb3+ recombination in ion implanted AlxGa1-xN (0 <= x <= 1) layers  Full Text
AUTHORS: Rodrigues, J; Fialho, M; Magalhaes, S; Correia, MR; Rino, L; Alves, E; Neves, AJ; Lorenz, K; Monteiro, T;
PUBLISHED: 2016, SOURCE: JOURNAL OF LUMINESCENCE, VOLUME: 178
INDEXED IN: Scopus WOS CrossRef: 3
IN MY: ORCID
66
TITLE: Study of damage formation and annealing of implanted III-nitride semiconductors for optoelectronic devices  Full Text
AUTHORS: Faye, DN; Fialho, M; Magalhaes, S; Alves, E; Ben Sedrine, N; Rodrigues, J; Correia, MR; Monteiro, T; Bockowski, M; Hoffmann, V; Weyers, M; Lorenz, K;
PUBLISHED: 2016, SOURCE: 18th International Conference on Radiation Effects in Insulators (REI) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 379
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID
68
TITLE: Structural, optical, and electrical properties of SmNbO4  Full Text
AUTHORS: Nico, C; Soares, MRN; Costa, FM; Monteiro, T; Graca, MPF;
PUBLISHED: 2016, SOURCE: 6th International Conference on Advanced Nanomaterials (ANM) in JOURNAL OF APPLIED PHYSICS, VOLUME: 120, ISSUE: 5
INDEXED IN: Scopus WOS CrossRef: 3
IN MY: ORCID
69
TITLE: Quantum Well Intermixing and Radiation Effects in InGaN/GaN Multi Quantum Wells
AUTHORS: Lorenz, K; Redondo Cubero, A; Lourenco, MB; Sequeira, MC; Peres, M; Freitas, A; Alves, LC; Alves, E; Leitao, MP; Rodrigues, J; Ben Sedrine, N; Correia, MR; Monteiro, T;
PUBLISHED: 2016, SOURCE: Conference on Gallium Nitride Materials and Devices XI in GALLIUM NITRIDE MATERIALS AND DEVICES XI, VOLUME: 9748
INDEXED IN: Scopus WOS CrossRef: 1
IN MY: ORCID
70
TITLE: Spectroscopic analysis of the NIR emission in Tm implanted AlxGa1-xN layers  Full Text
AUTHORS: Rodrigues, J; Fialho, M; Esteves, TC; Santos, NF; Ben Sedrine, N; Rino, L; Neves, AJ; Lorenz, K; Alves, E; Monteiro, T;
PUBLISHED: 2016, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 120, ISSUE: 8
INDEXED IN: Scopus WOS CrossRef: 2
IN MY: ORCID
Page 7 of 16. Total results: 157.