Ulrich Wahl
AuthID: R-000-HB1
51
TITLE: Emission channeling studies of defect annealing in the wide band gap semiconductors ZnTe and ZnSe Full Text
AUTHORS: Bharuth-Ram, K; Hofsäss, H; Restle, M; Wahl, U;
PUBLISHED: 1999, SOURCE: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, VOLUME: 156, ISSUE: 1-4
AUTHORS: Bharuth-Ram, K; Hofsäss, H; Restle, M; Wahl, U;
PUBLISHED: 1999, SOURCE: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, VOLUME: 156, ISSUE: 1-4
52
TITLE: Lattice location of implanted Cu in Si Full Text
AUTHORS: Wahl, U; J.G Correia; Vantomme, A; Langouche, G;
PUBLISHED: 1999, SOURCE: Physica B: Condensed Matter, VOLUME: 273-274
AUTHORS: Wahl, U; J.G Correia; Vantomme, A; Langouche, G;
PUBLISHED: 1999, SOURCE: Physica B: Condensed Matter, VOLUME: 273-274
53
TITLE: Lattice site and diffusion of ion-implanted Li in as-grown and Se-rich ZnSe Full Text
AUTHORS: Bharuth-Ram, K; Restle, M; Hofsäss, H; Ronning, C; Wahl, U;
PUBLISHED: 1999, SOURCE: Physica B: Condensed Matter, VOLUME: 273-274
AUTHORS: Bharuth-Ram, K; Restle, M; Hofsäss, H; Ronning, C; Wahl, U;
PUBLISHED: 1999, SOURCE: Physica B: Condensed Matter, VOLUME: 273-274
54
TITLE: Lattice sites and stability of implanted Er in FZ and CZ Si
AUTHORS: Wahl, U; Correia, JG ; Langouche, G; Vantomme, A;
PUBLISHED: 1998, SOURCE: Symposium on Materials and Devices for Silicon-Based Optoelectronics, at the 1997 MRS Fall Meeting in MATERIALS AND DEVICES FOR SILICON-BASED OPTOELECTRONICS, VOLUME: 486
AUTHORS: Wahl, U; Correia, JG ; Langouche, G; Vantomme, A;
PUBLISHED: 1998, SOURCE: Symposium on Materials and Devices for Silicon-Based Optoelectronics, at the 1997 MRS Fall Meeting in MATERIALS AND DEVICES FOR SILICON-BASED OPTOELECTRONICS, VOLUME: 486
INDEXED IN: 
Scopus 
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Scopus WOS IN MY: 
ORCID | ResearcherID
ORCID | ResearcherID55
TITLE: The influence of oxygen on the lattice sites of rare earths in silicon Full Text
AUTHORS: Wahl, U; Vantomme, A; Langouche, G; Correia, JG ;
PUBLISHED: 1998, SOURCE: Symposium on Light Emission from Silicon - Procress Towards Si-based Optoelectronics at the Spring Meeting of the European-Materials-Research-Society in JOURNAL OF LUMINESCENCE, VOLUME: 80, ISSUE: 1-4
AUTHORS: Wahl, U; Vantomme, A; Langouche, G; Correia, JG ;
PUBLISHED: 1998, SOURCE: Symposium on Light Emission from Silicon - Procress Towards Si-based Optoelectronics at the Spring Meeting of the European-Materials-Research-Society in JOURNAL OF LUMINESCENCE, VOLUME: 80, ISSUE: 1-4
IN MY: ORCID | ResearcherID
ORCID | ResearcherID56
TITLE: Direct determination of atomic positions on the Cu(110)-(1×2)-H surface
AUTHORS: Mijiritskii, AV; Wahl, U; Langelaar, MH; Boerma, DO;
PUBLISHED: 1998, SOURCE: Physical Review B - Condensed Matter and Materials Physics, VOLUME: 57, ISSUE: 15
AUTHORS: Mijiritskii, AV; Wahl, U; Langelaar, MH; Boerma, DO;
PUBLISHED: 1998, SOURCE: Physical Review B - Condensed Matter and Materials Physics, VOLUME: 57, ISSUE: 15
INDEXED IN: Scopus
Scopus IN MY: ORCID
ORCID57
TITLE: Backscattering/channeling study of high-dose rare-earth implants into Si Full Text
AUTHORS: Vantomme, A; Wahl, U; Wu, MF; Hogg, S; Pattyn, H; Langouche, G; Bender, H;
PUBLISHED: 1998, SOURCE: 13th International Conference on Ion Beam Analysis (IBA-13) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 136
AUTHORS: Vantomme, A; Wahl, U; Wu, MF; Hogg, S; Pattyn, H; Langouche, G; Bender, H;
PUBLISHED: 1998, SOURCE: 13th International Conference on Ion Beam Analysis (IBA-13) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 136
IN MY: ORCID | ResearcherID
ORCID | ResearcherID58
TITLE: Direct determination of the lattice site of H atoms on the (1 x 2) reconstructed Cu (110) surface Full Text
AUTHORS: Mijiritskii, AV; Wahl, U; Langelaar, MH; Boerma, DO;
PUBLISHED: 1998, SOURCE: 13th International Conference on Ion Beam Analysis (IBA-13) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 136
AUTHORS: Mijiritskii, AV; Wahl, U; Langelaar, MH; Boerma, DO;
PUBLISHED: 1998, SOURCE: 13th International Conference on Ion Beam Analysis (IBA-13) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 136
IN MY: ORCID | ResearcherID
ORCID | ResearcherID59
TITLE: Lattice site location studies of ion implanted Li-8 in GaN Full Text
AUTHORS: Dalmer, M; Restle, M; Sebastian, M; Vetter, U; Hofsass, H; Bremser, MD; Ronning, C; Davis, RF; Wahl, U; Bharuth Ram, K;
PUBLISHED: 1998, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 84, ISSUE: 6
AUTHORS: Dalmer, M; Restle, M; Sebastian, M; Vetter, U; Hofsass, H; Bremser, MD; Ronning, C; Davis, RF; Wahl, U; Bharuth Ram, K;
PUBLISHED: 1998, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 84, ISSUE: 6
INDEXED IN: Scopus WOS
Scopus WOS IN MY: ORCID | ResearcherID
ORCID | ResearcherID60
TITLE: Lattice sites and damage annealing of implanted Tm and Er in Si
AUTHORS: Wahl, U; Correia, JG ; De Wachter, J; Langouche, G; Marques, JG ; Moons, R; Vantomme, A;
PUBLISHED: 1997, SOURCE: Symposium on Defects and Diffusion in Silicon Processing in DEFECTS AND DIFFUSION IN SILICON PROCESSING, VOLUME: 469
AUTHORS: Wahl, U; Correia, JG ; De Wachter, J; Langouche, G; Marques, JG ; Moons, R; Vantomme, A;
PUBLISHED: 1997, SOURCE: Symposium on Defects and Diffusion in Silicon Processing in DEFECTS AND DIFFUSION IN SILICON PROCESSING, VOLUME: 469
