Ulrich Wahl
AuthID: R-000-HB1
61
TITLE: Emission channeling studies of Li in semiconductors
AUTHORS: Wahl, U;
PUBLISHED: 1997, SOURCE: PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS, VOLUME: 280, ISSUE: 3-4
AUTHORS: Wahl, U;
PUBLISHED: 1997, SOURCE: PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS, VOLUME: 280, ISSUE: 3-4
62
TITLE: Channeled ion beam synthesis of erbium silicide: Comparison of experimental studies and binary collision simulations Full Text
AUTHORS: Wahl, U; Vantomme, A; Wu, MF; Pattyn, H; Langouche, G;
PUBLISHED: 1997, SOURCE: 10th International Conference on Ion Beam Modification of Materials (IBMM-96) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 127
AUTHORS: Wahl, U; Vantomme, A; Wu, MF; Pattyn, H; Langouche, G;
PUBLISHED: 1997, SOURCE: 10th International Conference on Ion Beam Modification of Materials (IBMM-96) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 127
IN MY: ORCID | ResearcherID
63
TITLE: Direct evidence for stability of tetrahedral interstitial Er in Si up to 900 degrees C
AUTHORS: Wahl, U; Correia, JG; Langouche, G; Marques, JG;
PUBLISHED: 1997, SOURCE: 19th International Conference on Defects in Semiconductors (ICDS-19) in DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3, VOLUME: 258-2
AUTHORS: Wahl, U; Correia, JG; Langouche, G; Marques, JG;
PUBLISHED: 1997, SOURCE: 19th International Conference on Defects in Semiconductors (ICDS-19) in DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3, VOLUME: 258-2
INDEXED IN: WOS
IN MY: ResearcherID
64
TITLE: alpha-emission channeling studies of the lattice site of oversized atoms implanted in Fe and Ni single crystals (Reprinted from Nuclear Instruments and Methods in Physics Research B, vol 106, pg 23-27, 1995)
AUTHORS: DeWachter, J; Blasser, S; Hofsass, H; Jahn, S; Lindroos, M; Moons, R; Pattyn, H; Restle, M; Vantomme, A; Wahl, U; VanDuppen, P; Langouche, G;
PUBLISHED: 1996, SOURCE: 9th International Conference on Ion Beam Modification of Materials (IBMM 95) in ION BEAM MODIFICATION OF MATERIALS
AUTHORS: DeWachter, J; Blasser, S; Hofsass, H; Jahn, S; Lindroos, M; Moons, R; Pattyn, H; Restle, M; Vantomme, A; Wahl, U; VanDuppen, P; Langouche, G;
PUBLISHED: 1996, SOURCE: 9th International Conference on Ion Beam Modification of Materials (IBMM 95) in ION BEAM MODIFICATION OF MATERIALS
INDEXED IN: WOS
IN MY: ResearcherID
65
TITLE: Thermal stability of substitutional ag in CdTe Full Text
AUTHORS: Jahn, SG; Hofsass, H; Restle, M; Ronning, C; Quintel, H; BharuthRam, K; Wahl, U;
PUBLISHED: 1996, SOURCE: Symposium D on Purification, Doping and Defects in II-VI Materials, at the 1995 E-MRS Spring Conference in JOURNAL OF CRYSTAL GROWTH, VOLUME: 161, ISSUE: 1-4
AUTHORS: Jahn, SG; Hofsass, H; Restle, M; Ronning, C; Quintel, H; BharuthRam, K; Wahl, U;
PUBLISHED: 1996, SOURCE: Symposium D on Purification, Doping and Defects in II-VI Materials, at the 1995 E-MRS Spring Conference in JOURNAL OF CRYSTAL GROWTH, VOLUME: 161, ISSUE: 1-4
IN MY: ORCID | ResearcherID
66
TITLE: Lattice sites of Li in CdTe Full Text
AUTHORS: Restle, M; BharuthRam, K; Quintel, H; Ronning, C; Hofsass, H; Wahl, U; Jahn, SG;
PUBLISHED: 1996, SOURCE: Symposium D on Purification, Doping and Defects in II-VI Materials, at the 1995 E-MRS Spring Conference in JOURNAL OF CRYSTAL GROWTH, VOLUME: 161, ISSUE: 1-4
AUTHORS: Restle, M; BharuthRam, K; Quintel, H; Ronning, C; Hofsass, H; Wahl, U; Jahn, SG;
PUBLISHED: 1996, SOURCE: Symposium D on Purification, Doping and Defects in II-VI Materials, at the 1995 E-MRS Spring Conference in JOURNAL OF CRYSTAL GROWTH, VOLUME: 161, ISSUE: 1-4
IN MY: ORCID | ResearcherID
67
TITLE: Alpha-emission channeling investigations of the lattice location of Li in Ge Full Text
AUTHORS: Wahl, U; Jahn, SG; Restle, M; Ronning, C; Quintel, H; BharuthRam, K; Hofsass, H;
PUBLISHED: 1996, SOURCE: 12th International Conference on Ion Beam Analysis (IBA-12) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 118, ISSUE: 1-4
AUTHORS: Wahl, U; Jahn, SG; Restle, M; Ronning, C; Quintel, H; BharuthRam, K; Hofsass, H;
PUBLISHED: 1996, SOURCE: 12th International Conference on Ion Beam Analysis (IBA-12) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 118, ISSUE: 1-4
IN MY: ORCID | ResearcherID
68
TITLE: Channeled ion beam synthesis: A new technique for forming high-quality rare-earth silicides Full Text
AUTHORS: Vantomme, A; Wu, MF; Wahl, U; DeWachter, J; Degroote, S; Pattyn, H; Langouche, G; Bender, H;
PUBLISHED: 1996, SOURCE: Symposium 1 on New Trends in Ion Beam Processing of Materials, at the E-MRS 96 Spring Meeting in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 120, ISSUE: 1-4
AUTHORS: Vantomme, A; Wu, MF; Wahl, U; DeWachter, J; Degroote, S; Pattyn, H; Langouche, G; Bender, H;
PUBLISHED: 1996, SOURCE: Symposium 1 on New Trends in Ion Beam Processing of Materials, at the E-MRS 96 Spring Meeting in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 120, ISSUE: 1-4
IN MY: ORCID | ResearcherID
69
TITLE: LATTICE SITE CHANGES OF ION-IMPLANTED LI IN ZNSE Full Text
AUTHORS: JAHN, SG; HOFSASS, H; RESTLE, M; RONNING, C; TROJAHN, I; WAHL, U; WIENECKE, M;
PUBLISHED: 1995, SOURCE: SOLID STATE COMMUNICATIONS, VOLUME: 93, ISSUE: 5
AUTHORS: JAHN, SG; HOFSASS, H; RESTLE, M; RONNING, C; TROJAHN, I; WAHL, U; WIENECKE, M;
PUBLISHED: 1995, SOURCE: SOLID STATE COMMUNICATIONS, VOLUME: 93, ISSUE: 5
INDEXED IN: WOS
IN MY: ResearcherID
70
TITLE: LATTICE SITES OF ION-IMPLANTED LI IN DIAMOND Full Text
AUTHORS: RESTLE, M; BHARUTHRAM, K; QUINTEL, H; RONNING, C; HOFSASS, H; JAHN, SG; WAHL, U;
PUBLISHED: 1995, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 66, ISSUE: 20
AUTHORS: RESTLE, M; BHARUTHRAM, K; QUINTEL, H; RONNING, C; HOFSASS, H; JAHN, SG; WAHL, U;
PUBLISHED: 1995, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 66, ISSUE: 20
INDEXED IN: Scopus WOS
IN MY: ORCID | ResearcherID