Ulrich Wahl
AuthID: R-000-HB1
71
TITLE: alpha-emission channeling studies of the lattice site of oversized atoms implanted in Fe and Ni single crystals Full Text
AUTHORS: DeWachter, J; Blasser, S; Hofsass, H; Jahn, S; Lindroos, M; Moons, R; Pattyn, H; Restle, M; Vantomme, A; Wahl, U; VanDuppen, P; Langouche, G;
PUBLISHED: 1995, SOURCE: 9th International Conference on Ion Beam Modification of Materials (IBMM 95) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 106, ISSUE: 1-4
AUTHORS: DeWachter, J; Blasser, S; Hofsass, H; Jahn, S; Lindroos, M; Moons, R; Pattyn, H; Restle, M; Vantomme, A; Wahl, U; VanDuppen, P; Langouche, G;
PUBLISHED: 1995, SOURCE: 9th International Conference on Ion Beam Modification of Materials (IBMM 95) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 106, ISSUE: 1-4
INDEXED IN: 
Scopus 
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ORCID | ResearcherID
ORCID | ResearcherID72
TITLE: Lattice sites of ion implanted Li in Zn-rich ZnSe
AUTHORS: Jahn, SG; Wahl, U; Restle, M; Quintel, H; Hofsass, H; Wienecke, M; Trojahn, I;
PUBLISHED: 1995, SOURCE: 18th International Conference on Defects in Semiconductors (ICDS-18) in ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, VOLUME: 196-2, ISSUE: pt 1
AUTHORS: Jahn, SG; Wahl, U; Restle, M; Quintel, H; Hofsass, H; Wienecke, M; Trojahn, I;
PUBLISHED: 1995, SOURCE: 18th International Conference on Defects in Semiconductors (ICDS-18) in ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, VOLUME: 196-2, ISSUE: pt 1
INDEXED IN: Scopus WOS
Scopus WOS IN MY: ORCID | ResearcherID
ORCID | ResearcherID73
TITLE: Lattice sites of Li in Si and Ge
AUTHORS: Wahl, U; Jahn, SG; Restle, M; Quintel, H; Hofsass, H;
PUBLISHED: 1995, SOURCE: 18th International Conference on Defects in Semiconductors (ICDS-18) in ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, VOLUME: 196-2, ISSUE: pt 1
AUTHORS: Wahl, U; Jahn, SG; Restle, M; Quintel, H; Hofsass, H;
PUBLISHED: 1995, SOURCE: 18th International Conference on Defects in Semiconductors (ICDS-18) in ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, VOLUME: 196-2, ISSUE: pt 1
INDEXED IN: Scopus WOS
Scopus WOS IN MY: ORCID | ResearcherID
ORCID | ResearcherID74
TITLE: Lattice site changes of ion implanted Li in ZnSe Full Text
AUTHORS: S.G Jahn; Hofsäss, H; Restle, M; Ronning, C; Trojahn, I; Wahl, U; Wienecke, M;
PUBLISHED: 1995, SOURCE: Solid State Communications, VOLUME: 93, ISSUE: 5
AUTHORS: S.G Jahn; Hofsäss, H; Restle, M; Ronning, C; Trojahn, I; Wahl, U; Wienecke, M;
PUBLISHED: 1995, SOURCE: Solid State Communications, VOLUME: 93, ISSUE: 5
75
TITLE: α-emission channeling studies of the lattice site of oversized atoms implanted in Fe and Ni single crystals Full Text
AUTHORS: De Wachter, J; Blässer, S; Hofsäss, H; Jahn, S; Lindroos, M; Moons, R; Pattyn, H; Restle, M; Vantomme, A; Wahl, U; Van Duppen, P; Langouche, G;
PUBLISHED: 1995, SOURCE: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, VOLUME: 106, ISSUE: 1-4
AUTHORS: De Wachter, J; Blässer, S; Hofsäss, H; Jahn, S; Lindroos, M; Moons, R; Pattyn, H; Restle, M; Vantomme, A; Wahl, U; Van Duppen, P; Langouche, G;
PUBLISHED: 1995, SOURCE: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, VOLUME: 106, ISSUE: 1-4
76
TITLE: Lattice sites of ion implanted Li in diamond Full Text
AUTHORS: Restle, M; Bharuth-Ram, K; Quintel, H; Ronning, C; Hofsäss, H; Jahn, SG; ISOLDE-Collaboration, ; Wahl, U;
PUBLISHED: 1995, SOURCE: Appl. Phys. Lett. - Applied Physics Letters, VOLUME: 66, ISSUE: 20
AUTHORS: Restle, M; Bharuth-Ram, K; Quintel, H; Ronning, C; Hofsäss, H; Jahn, SG; ISOLDE-Collaboration, ; Wahl, U;
PUBLISHED: 1995, SOURCE: Appl. Phys. Lett. - Applied Physics Letters, VOLUME: 66, ISSUE: 20
77
TITLE: IMPURITY LATTICE LOCATION AND RECOVERY OF STRUCTURAL DEFECTS IN SEMICONDUCTORS STUDIED BY EMISSION CHANNELING
AUTHORS: HOFSAS, H; WAHL, U; JAHN, SG;
PUBLISHED: 1994, SOURCE: HYPERFINE INTERACTIONS, VOLUME: 84, ISSUE: 1-4
AUTHORS: HOFSAS, H; WAHL, U; JAHN, SG;
PUBLISHED: 1994, SOURCE: HYPERFINE INTERACTIONS, VOLUME: 84, ISSUE: 1-4
INDEXED IN: Scopus WOS
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ResearcherID78
TITLE: LI ON BOND-CENTER SITES IN SI
AUTHORS: Wahl, U; Restle, M; Ronning, C; Hofsass, H; Jahn, SG;
PUBLISHED: 1994, SOURCE: PHYSICAL REVIEW B, VOLUME: 50, ISSUE: 4
AUTHORS: Wahl, U; Restle, M; Ronning, C; Hofsass, H; Jahn, SG;
PUBLISHED: 1994, SOURCE: PHYSICAL REVIEW B, VOLUME: 50, ISSUE: 4
INDEXED IN: Scopus WOS
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ResearcherID79
TITLE: LATTICE SITES OF ION-IMPLANTED LI IN INDIUM-ANTIMONIDE Full Text
AUTHORS: HOFSASS, H; WAHL, U; RESTLE, M; RONNING, C; RECKNAGEL, E; JAHN, SG;
PUBLISHED: 1994, SOURCE: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 85, ISSUE: 1-4
AUTHORS: HOFSASS, H; WAHL, U; RESTLE, M; RONNING, C; RECKNAGEL, E; JAHN, SG;
PUBLISHED: 1994, SOURCE: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 85, ISSUE: 1-4
INDEXED IN: Scopus WOS
Scopus WOS IN MY: ORCID | ResearcherID
ORCID | ResearcherID80
TITLE: Impurity lattice location and recovery of structural defects in semiconductors studied by emission channeling
AUTHORS: Hofsäss, H; Wahl, U; Jahn, SG;
PUBLISHED: 1994, SOURCE: Hyperfine Interact - Hyperfine Interactions, VOLUME: 84, ISSUE: 1
AUTHORS: Hofsäss, H; Wahl, U; Jahn, SG;
PUBLISHED: 1994, SOURCE: Hyperfine Interact - Hyperfine Interactions, VOLUME: 84, ISSUE: 1
