21
TITLE: Four-copper complexes in Si and the Cu-photoluminescence defect: A first-principles study
AUTHORS: Carvalho, A; Backlund, DJ; Estreicher, SK;
PUBLISHED: 2011, SOURCE: PHYSICAL REVIEW B, VOLUME: 84, ISSUE: 15
INDEXED IN: Scopus WOS CrossRef
22
TITLE: Influence of Ge content on the optical properties of X and W centers in dilute Si-Ge alloys
AUTHORS: Leitao, JP ; Carvalho, A; Coutinho, J ; Pereira, RN ; Santos, NM; Ankiewicz, AO; Sobolev, NA; Barroso, M ; Lundsgaard L Hansen; Nylandsted N Larsen; Briddon, PR;
PUBLISHED: 2011, SOURCE: PHYSICAL REVIEW B, VOLUME: 84, ISSUE: 16
INDEXED IN: Scopus WOS
23
TITLE: Electronic structure modification of Si nanocrystals with F-4-TCNQ
AUTHORS: Carvalho, A; Coutinho, J ; Barroso, M ; Silva, EL; Oberg, S; Rayson, M; Briddon, PR;
PUBLISHED: 2011, SOURCE: PHYSICAL REVIEW B, VOLUME: 84, ISSUE: 12
INDEXED IN: Scopus WOS CrossRef: 8
24
TITLE: The oxygen dimer in Si: Its relationship to the light-induced degradation of Si solar cells?  Full Text
AUTHORS: Murin, LI; Tolkacheva, EA; Markevich, VP; Peaker, AR; Hamilton, B; Monakhov, E; Svensson, BG; Lindstrom, JL; Santos, P; Coutinho, J ; Carvalho, A;
PUBLISHED: 2011, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 98, ISSUE: 18
INDEXED IN: Scopus WOS CrossRef: 35
25
TITLE: Tin-vacancy complex in germanium  Full Text
AUTHORS: Markevich, VP; Peaker, AR; Hamilton, B; Litvinov, VV; Yu. M Pokotilo; Lastovskii, SB; Coutinho, J ; Carvalho, A; Rayson, MJ; Briddon, PR;
PUBLISHED: 2011, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 109, ISSUE: 8
INDEXED IN: Scopus WOS CrossRef: 20
26
TITLE: Electronic structure of Zn, Cu and Ni impurities in germanium  Full Text
AUTHORS: Silva, EL; Coutinho, J ; Carvalho, A; Torres, VJB ; Barroso, M ; Jones, R; Briddon, PR;
PUBLISHED: 2011, SOURCE: JOURNAL OF PHYSICS-CONDENSED MATTER, VOLUME: 23, ISSUE: 6
INDEXED IN: Scopus WOS CrossRef
27
TITLE: Surface-phosphorus interaction in Si nanocrystals  Full Text
AUTHORS: Carvalho, A; Celikkol, B; Coutinho, J ; Briddon, PR;
PUBLISHED: 2011, SOURCE: International Conference on Extended Defects in Semiconductors, EDS 2010 in Journal of Physics: Conference Series, VOLUME: 281, ISSUE: 1
INDEXED IN: Scopus CrossRef: 4
28
TITLE: When technology prevails and pedagogy survives
AUTHORS: Carvalho, IS; Fonseca, JZ;
PUBLISHED: 2011, SOURCE: 2011 IEEE Global Engineering Education Conference, EDUCON 2011 in 2011 IEEE Global Engineering Education Conference, EDUCON 2011
INDEXED IN: Scopus CrossRef
29
TITLE: Electronic structural details of donor-vacancy complexes in Si-doped Ge and Ge-doped Si  Full Text
AUTHORS: Coutinho, J ; Castro, F; Torres, VJB ; Carvalho, A; Barroso, M ; Briddon, PR;
PUBLISHED: 2010, SOURCE: Symposium on Silicon and Germanium Issues for Future CMOS Devices held at the 2009 E-MRS Spring Meeting in THIN SOLID FILMS, VOLUME: 518, ISSUE: 9
INDEXED IN: Scopus WOS CrossRef: 2
30
TITLE: Density-functional theory study of interstitial iron and its complexes with B and Al in dilute SiGe alloys  Full Text
AUTHORS: Carvalho, A; Coutinho, J ; Jones, R; Barroso, M ; Goss, JP; Briddon, PR;
PUBLISHED: 2008, SOURCE: International Symposium on Beyond Silicon Technology held at the 2008 EMRS Spring Meeting in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 11, ISSUE: 5-6
INDEXED IN: Scopus WOS CrossRef: 1
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