41
TITLE: Studies of the VO centre in Ge using first principles cluster calculations  Full Text
AUTHORS: Carvalho, A; Jones, R; Coutinho, J ; Shaw, M; Torres, VJB ; Oeberg, S; Briddon, PR;
PUBLISHED: 2006, SOURCE: Symposium on Germanium-Based Semiconductors from Materials to Devices held at the 2006 EMRS Spring Meeting in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 9, ISSUE: 4-5
INDEXED IN: Scopus WOS CrossRef: 3
42
TITLE: First-principles investigation of a bistable boron-oxygen interstitial pair in Si
AUTHORS: Carvalho, A; Jones, R; Sanati, M; Estreicher, SK; Coutinho, J ; Briddon, PR;
PUBLISHED: 2006, SOURCE: PHYSICAL REVIEW B, VOLUME: 73, ISSUE: 24
INDEXED IN: Scopus WOS CrossRef: 18
43
TITLE: Calculation of deep carrier traps in a divacancy in germanium crystals  Full Text
AUTHORS: Coutinho, J ; Torres, VJB ; Jones, R; Carvalho, A; Oberg, S; Briddon, PR;
PUBLISHED: 2006, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 88, ISSUE: 9
INDEXED IN: Scopus WOS CrossRef: 18
44
TITLE: Density-functional study of small interstitial clusters in Si: Comparison with experiments
AUTHORS: Carvalho, A; Jones, R; Coutinho, J ; Briddon, PR;
PUBLISHED: 2005, SOURCE: PHYSICAL REVIEW B, VOLUME: 72, ISSUE: 15
INDEXED IN: Scopus WOS CrossRef: 22
45
TITLE: Ab initio calculation of the local vibrational modes of the interstitial boron-interstitial oxygen defect in Si  Full Text
AUTHORS: Carvalho, A; Jones, R; Coutinho, J ; Briddon, PR;
PUBLISHED: 2005, SOURCE: JOURNAL OF PHYSICS-CONDENSED MATTER, VOLUME: 17, ISSUE: 17
INDEXED IN: Scopus WOS CrossRef: 6
46
TITLE: Ab-initio studies of local vibrations of small self-interstitial aggregates in silicon
AUTHORS: Carvalho, A; Jones, R; Coutinho, J ; Torres, VJB ; Briddon, PR;
PUBLISHED: 2005, SOURCE: 11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2005) in GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XI, VOLUME: 108-109
INDEXED IN: Scopus WOS
Page 5 of 5. Total results: 46.