Patrick R. Briddon
AuthID: R-006-MRG
61
TITLE: Calculation of deep carrier traps in a divacancy in germanium crystals Full Text
AUTHORS: Coutinho, J ; Torres, VJB ; Jones, R; Carvalho, A; Oberg, S; Briddon, PR;
PUBLISHED: 2006, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 88, ISSUE: 9
AUTHORS: Coutinho, J ; Torres, VJB ; Jones, R; Carvalho, A; Oberg, S; Briddon, PR;
PUBLISHED: 2006, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 88, ISSUE: 9
62
TITLE: Local vibrations of substitutional carbon in SiGe alloys
AUTHORS: Khirunenko, L; Pomozov, Y; Sosnin, M; Torres, VJB ; Coutinho, J ; Jones, R; Abrosimov, NV; Riemann, H; Briddon, PR;
PUBLISHED: 2006, SOURCE: 3rd International Materials Symposium/12th Meeting of the Sociedad-Portuguesa-da-Materials (Materials 2005/SPM) in ADVANCED MATERIALS FORUM III, PTS 1 AND 2, VOLUME: 514-516, ISSUE: PART 1
AUTHORS: Khirunenko, L; Pomozov, Y; Sosnin, M; Torres, VJB ; Coutinho, J ; Jones, R; Abrosimov, NV; Riemann, H; Briddon, PR;
PUBLISHED: 2006, SOURCE: 3rd International Materials Symposium/12th Meeting of the Sociedad-Portuguesa-da-Materials (Materials 2005/SPM) in ADVANCED MATERIALS FORUM III, PTS 1 AND 2, VOLUME: 514-516, ISSUE: PART 1
INDEXED IN: 
Scopus 
WOS
Scopus WOS63
TITLE: Electronic structure and Jahn-Teller instabilities in a single vacancy in Ge Full Text
AUTHORS: Coutinho, J ; Jones, R; Torres, VJB ; Barroso, M ; Oberg, S; Briddon, PR;
PUBLISHED: 2005, SOURCE: JOURNAL OF PHYSICS-CONDENSED MATTER, VOLUME: 17, ISSUE: 48
AUTHORS: Coutinho, J ; Jones, R; Torres, VJB ; Barroso, M ; Oberg, S; Briddon, PR;
PUBLISHED: 2005, SOURCE: JOURNAL OF PHYSICS-CONDENSED MATTER, VOLUME: 17, ISSUE: 48
64
TITLE: Local vibrations on hydrogen dimers in dilute SiGe crystalline solutions Full Text
AUTHORS: Coutinho, J ; Torres, VJB ; Pereira, RN ; Jones, R; Oberg, S; Briddon, PR;
PUBLISHED: 2005, SOURCE: Symposium on Materials Science and Device Issues for Futrue Si-Based Technologies held at the 2005 EMRS Meeting in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 124, ISSUE: SUPPL.
AUTHORS: Coutinho, J ; Torres, VJB ; Pereira, RN ; Jones, R; Oberg, S; Briddon, PR;
PUBLISHED: 2005, SOURCE: Symposium on Materials Science and Device Issues for Futrue Si-Based Technologies held at the 2005 EMRS Meeting in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 124, ISSUE: SUPPL.
65
TITLE: Density-functional study of small interstitial clusters in Si: Comparison with experiments
AUTHORS: Carvalho, A; Jones, R; Coutinho, J ; Briddon, PR;
PUBLISHED: 2005, SOURCE: PHYSICAL REVIEW B, VOLUME: 72, ISSUE: 15
AUTHORS: Carvalho, A; Jones, R; Coutinho, J ; Briddon, PR;
PUBLISHED: 2005, SOURCE: PHYSICAL REVIEW B, VOLUME: 72, ISSUE: 15
66
TITLE: Anharmonicity and lattice coupling of bond-centered hydrogen and interstitial oxygen defects in monoisotopic silicon crystals
AUTHORS: Pereira, RN ; Nielsen, BB; Coutinho, J ; Torres, VJB ; Jones, R; Ohya, T; Itoh, KM; Briddon, PR;
PUBLISHED: 2005, SOURCE: PHYSICAL REVIEW B, VOLUME: 72, ISSUE: 11
AUTHORS: Pereira, RN ; Nielsen, BB; Coutinho, J ; Torres, VJB ; Jones, R; Ohya, T; Itoh, KM; Briddon, PR;
PUBLISHED: 2005, SOURCE: PHYSICAL REVIEW B, VOLUME: 72, ISSUE: 11
67
TITLE: Vibrational properties of elemental hydrogen centres in Si, Ge and dilute SiGe alloys Full Text
AUTHORS: Balsas, A ; Torres, VJB ; Coutinho, J ; Jones, R; Hourahine, B; Briddon, PR; Barroso, M ;
PUBLISHED: 2005, SOURCE: 1st International Workshop on Coordination Action on Defects Relevent to Engineering Silicon-Based Devices in JOURNAL OF PHYSICS-CONDENSED MATTER, VOLUME: 17, ISSUE: 22
AUTHORS: Balsas, A ; Torres, VJB ; Coutinho, J ; Jones, R; Hourahine, B; Briddon, PR; Barroso, M ;
PUBLISHED: 2005, SOURCE: 1st International Workshop on Coordination Action on Defects Relevent to Engineering Silicon-Based Devices in JOURNAL OF PHYSICS-CONDENSED MATTER, VOLUME: 17, ISSUE: 22
INDEXED IN: WOS
WOS68
TITLE: Electrical activity of Er and Er-O centers in silicon
AUTHORS: Prezzi, D; Eberlein, TAG; Jones, R; Filhol, JS; Coutinho, J ; Shaw, MJ; Briddon, PR;
PUBLISHED: 2005, SOURCE: PHYSICAL REVIEW B, VOLUME: 71, ISSUE: 24
AUTHORS: Prezzi, D; Eberlein, TAG; Jones, R; Filhol, JS; Coutinho, J ; Shaw, MJ; Briddon, PR;
PUBLISHED: 2005, SOURCE: PHYSICAL REVIEW B, VOLUME: 71, ISSUE: 24
69
TITLE: Ab initio calculation of the local vibrational modes of the interstitial boron-interstitial oxygen defect in Si Full Text
AUTHORS: Carvalho, A; Jones, R; Coutinho, J ; Briddon, PR;
PUBLISHED: 2005, SOURCE: JOURNAL OF PHYSICS-CONDENSED MATTER, VOLUME: 17, ISSUE: 17
AUTHORS: Carvalho, A; Jones, R; Coutinho, J ; Briddon, PR;
PUBLISHED: 2005, SOURCE: JOURNAL OF PHYSICS-CONDENSED MATTER, VOLUME: 17, ISSUE: 17
70
TITLE: Metastable VO2 complexes in silicon: experimental and theoretical modeling studies
AUTHORS: Murin, LI; Lindstrom, J; Markevich, VP; Medvedeva, IF; Torres, VJB ; Coutinho, J ; Jones, R; Briddon, PR;
PUBLISHED: 2005, SOURCE: 11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2005) in GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XI, VOLUME: 108-109
AUTHORS: Murin, LI; Lindstrom, J; Markevich, VP; Medvedeva, IF; Torres, VJB ; Coutinho, J ; Jones, R; Briddon, PR;
PUBLISHED: 2005, SOURCE: 11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2005) in GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XI, VOLUME: 108-109
INDEXED IN: Scopus WOS
Scopus WOS