Radheshyam Rai
AuthID: R-000-NEM
181
TITLE: INFLUENCE OF SOLUTE DOPING ON THE HIGH-TEMPERATURE DEFORMATION-BEHAVIOR OF GAAS
AUTHORS: GURUSWAMY, S; RAI, RS; FABER, KT; HIRTH, JP; CLEMANS, JE; MCGUIGAN, S; THOMAS, RN; MITCHEL, W;
PUBLISHED: 1989, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 65, ISSUE: 6
AUTHORS: GURUSWAMY, S; RAI, RS; FABER, KT; HIRTH, JP; CLEMANS, JE; MCGUIGAN, S; THOMAS, RN; MITCHEL, W;
PUBLISHED: 1989, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 65, ISSUE: 6
182
TITLE: DISLOCATION-STRUCTURES IN IN-DOPED AND UNDOPED GAAS DEFORMED AT 700-1100-DEGREES-C
AUTHORS: RAI, RS; GURUSWAMY, S; FABER, KT; HIRTH, JP;
PUBLISHED: 1989, SOURCE: PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, VOLUME: 60, ISSUE: 3
AUTHORS: RAI, RS; GURUSWAMY, S; FABER, KT; HIRTH, JP;
PUBLISHED: 1989, SOURCE: PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, VOLUME: 60, ISSUE: 3
INDEXED IN: 
WOS
WOS IN MY: 
ORCID
ORCID183
TITLE: Dislocation structures in In-doped and undoped GaAs deformed at 700-1100°C
AUTHORS: Rai, RS; Guruswamy, S; Faber, KT; Hirth, JP;
PUBLISHED: 1989, SOURCE: Philosophical Magazine A, VOLUME: 60, ISSUE: 3
AUTHORS: Rai, RS; Guruswamy, S; Faber, KT; Hirth, JP;
PUBLISHED: 1989, SOURCE: Philosophical Magazine A, VOLUME: 60, ISSUE: 3
184
TITLE: CRYSTALLIZATION BEHAVIOR OF A GLASS IN THE Y2O3-SIO2-ALN SYSTEM
AUTHORS: DINGER, TR; RAI, RS; THOMAS, G;
PUBLISHED: 1988, SOURCE: JOURNAL OF THE AMERICAN CERAMIC SOCIETY, VOLUME: 71, ISSUE: 4
AUTHORS: DINGER, TR; RAI, RS; THOMAS, G;
PUBLISHED: 1988, SOURCE: JOURNAL OF THE AMERICAN CERAMIC SOCIETY, VOLUME: 71, ISSUE: 4
185
TITLE: EFFECT OF LEAD ACETATE IN THE PREPARATION OF THE LINDLAR CATALYST
AUTHORS: ULAN, JG; KUO, E; MAIER, WF; RAI, RS; THOMAS, G;
PUBLISHED: 1987, SOURCE: JOURNAL OF ORGANIC CHEMISTRY, VOLUME: 52, ISSUE: 14
AUTHORS: ULAN, JG; KUO, E; MAIER, WF; RAI, RS; THOMAS, G;
PUBLISHED: 1987, SOURCE: JOURNAL OF ORGANIC CHEMISTRY, VOLUME: 52, ISSUE: 14
186
TITLE: DEFORMATION-BEHAVIOR OF UNDOPED AND IN-DOPED GAAS IN THE TEMPERATURE-RANGE 700-100-DEGREES-C
AUTHORS: GURUSWAMY, S; RAI, RS; FABER, KT; HIRTH, JP;
PUBLISHED: 1987, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 62, ISSUE: 10
AUTHORS: GURUSWAMY, S; RAI, RS; FABER, KT; HIRTH, JP;
PUBLISHED: 1987, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 62, ISSUE: 10
INDEXED IN: WOS
WOS IN MY: ORCID
ORCID187
TITLE: Deformation behavior of undoped and In-doped GaAs in the temperature range 700–1100 °C
AUTHORS: Guruswamy, S; Rai, RS; Faber, KT; Hirth, JP;
PUBLISHED: 1987, SOURCE: Journal of Applied Physics, VOLUME: 62, ISSUE: 10
AUTHORS: Guruswamy, S; Rai, RS; Faber, KT; Hirth, JP;
PUBLISHED: 1987, SOURCE: Journal of Applied Physics, VOLUME: 62, ISSUE: 10
188
TITLE: LATTICE IMAGING STUDIES ON STRUCTURE AND DISORDER IN SIC POLYTYPES .1.
AUTHORS: RAI, RS; SINGH, SR; DUBEY, M; SINGH, G;
PUBLISHED: 1986, SOURCE: BULLETIN DE MINERALOGIE, VOLUME: 109, ISSUE: 5
AUTHORS: RAI, RS; SINGH, SR; DUBEY, M; SINGH, G;
PUBLISHED: 1986, SOURCE: BULLETIN DE MINERALOGIE, VOLUME: 109, ISSUE: 5
INDEXED IN: WOS
WOS IN MY: ORCID
ORCID189
TITLE: METAMORPHOSIS OF PALLADIUM AND ITS RELATION TO SELECTIVITY IN THE ROSENMUND REACTION
AUTHORS: MAIER, WF; CHETTLE, SJ; RAI, RS; THOMAS, G;
PUBLISHED: 1986, SOURCE: JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, VOLUME: 108, ISSUE: 10
AUTHORS: MAIER, WF; CHETTLE, SJ; RAI, RS; THOMAS, G;
PUBLISHED: 1986, SOURCE: JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, VOLUME: 108, ISSUE: 10
190
TITLE: LATTICE IMAGING STUDIES ON 201R POLYTYPE OF SILICON-CARBIDE
AUTHORS: RAI, RS; SINGH, G;
PUBLISHED: 1984, SOURCE: JOURNAL OF MATERIALS SCIENCE LETTERS, VOLUME: 3, ISSUE: 6
AUTHORS: RAI, RS; SINGH, G;
PUBLISHED: 1984, SOURCE: JOURNAL OF MATERIALS SCIENCE LETTERS, VOLUME: 3, ISSUE: 6
