S. Decoster
AuthID: R-006-QMY
11
TITLE: Diluted manganese on the bond-centered site in germanium Full Text
AUTHORS: Decoster, S; Cottenier, S; Wahl, U ; Correia, JG ; Pereira, LMC; Lacasta, C; Da Silva, MR ; Vantomme, A;
PUBLISHED: 2010, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 97, ISSUE: 15
AUTHORS: Decoster, S; Cottenier, S; Wahl, U ; Correia, JG ; Pereira, LMC; Lacasta, C; Da Silva, MR ; Vantomme, A;
PUBLISHED: 2010, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 97, ISSUE: 15
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TITLE: Lattice location study of ion implanted Sn and Sn-related defects in Ge
AUTHORS: Decoster, S; Cottenier, S; Wahl, U ; Correia, JG ; Vantomme, A;
PUBLISHED: 2010, SOURCE: PHYSICAL REVIEW B, VOLUME: 81, ISSUE: 15
AUTHORS: Decoster, S; Cottenier, S; Wahl, U ; Correia, JG ; Vantomme, A;
PUBLISHED: 2010, SOURCE: PHYSICAL REVIEW B, VOLUME: 81, ISSUE: 15
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TITLE: Lattice location of the group V elements Sb, As, and P in ZnO
AUTHORS: Ulrich Wahl ; Joao Guilherme Correia ; Tania Mendonca; Stefan Decoster;
PUBLISHED: 2010, SOURCE: Conference on Oxide-based Materials and Devices in OXIDE-BASED MATERIALS AND DEVICES, VOLUME: 7603
AUTHORS: Ulrich Wahl ; Joao Guilherme Correia ; Tania Mendonca; Stefan Decoster;
PUBLISHED: 2010, SOURCE: Conference on Oxide-based Materials and Devices in OXIDE-BASED MATERIALS AND DEVICES, VOLUME: 7603
INDEXED IN: Scopus WOS
14
TITLE: Effect of fluence on the lattice site of implanted Er and implantation induced strain in GaN Full Text
AUTHORS: Wahl, U ; De Vries, B; Decoster, S; Vantomme, A; Correia, JG ;
PUBLISHED: 2009, SOURCE: 16th International Conference on Ion Beam Modification of Materials in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 267, ISSUE: 8-9
AUTHORS: Wahl, U ; De Vries, B; Decoster, S; Vantomme, A; Correia, JG ;
PUBLISHED: 2009, SOURCE: 16th International Conference on Ion Beam Modification of Materials in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 267, ISSUE: 8-9
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TITLE: Lattice location study of implanted In in Ge Full Text
AUTHORS: Decoster, S; De Vries, B; Wahl, U ; Correia, JG ; Vantomme, A;
PUBLISHED: 2009, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 105, ISSUE: 8
AUTHORS: Decoster, S; De Vries, B; Wahl, U ; Correia, JG ; Vantomme, A;
PUBLISHED: 2009, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 105, ISSUE: 8
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TITLE: Transition Metal Impurities on the Bond-Centered Site in Germanium
AUTHORS: Decoster, S; Cottenier, S; De Vries, B; Emmerich, H; Wahl, U ; Correia, JG ; Vantomme, A;
PUBLISHED: 2009, SOURCE: PHYSICAL REVIEW LETTERS, VOLUME: 102, ISSUE: 6
AUTHORS: Decoster, S; Cottenier, S; De Vries, B; Emmerich, H; Wahl, U ; Correia, JG ; Vantomme, A;
PUBLISHED: 2009, SOURCE: PHYSICAL REVIEW LETTERS, VOLUME: 102, ISSUE: 6
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TITLE: Experimental evidence of tetrahedral interstitial and bond-centered Er in Ge Full Text
AUTHORS: Decoster, S; De Vries, B; Wahl, U ; Correia, JG ; Vantomme, A;
PUBLISHED: 2008, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 93, ISSUE: 14
AUTHORS: Decoster, S; De Vries, B; Wahl, U ; Correia, JG ; Vantomme, A;
PUBLISHED: 2008, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 93, ISSUE: 14