Vanya Georgieva Darakchieva
AuthID: R-000-TAH
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TITLE: Hydrogen in InN: A ubiquitous phenomenon in molecular beam epitaxy grown material Full Text
AUTHORS: Darakchieva, V; Lorenz, K ; Barradas, NP ; Alves, E ; Monemar, B; Schubert, M; Franco, N; Hsiao, CL; Chen, LC; Schaff, WJ; Tu, LW; Yamaguchi, T; Nanishi, Y;
PUBLISHED: 2010, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 96, ISSUE: 8
AUTHORS: Darakchieva, V; Lorenz, K ; Barradas, NP ; Alves, E ; Monemar, B; Schubert, M; Franco, N; Hsiao, CL; Chen, LC; Schaff, WJ; Tu, LW; Yamaguchi, T; Nanishi, Y;
PUBLISHED: 2010, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 96, ISSUE: 8
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TITLE: Role of impurities and dislocations for the unintentional n-type conductivity in InN Full Text
AUTHORS: Darakchieva, V; Barradas, NP ; Y Xie; Lorenz, K ; Alves, E ; Schubert, M; Persson, POA; Giuliani, F; Munnik, F; Hsiao, CL; Tu, LW; Schaff, WJ;
PUBLISHED: 2009, SOURCE: 3rd South African Conference on Photonic Materials in PHYSICA B-CONDENSED MATTER, VOLUME: 404, ISSUE: 22
AUTHORS: Darakchieva, V; Barradas, NP ; Y Xie; Lorenz, K ; Alves, E ; Schubert, M; Persson, POA; Giuliani, F; Munnik, F; Hsiao, CL; Tu, LW; Schaff, WJ;
PUBLISHED: 2009, SOURCE: 3rd South African Conference on Photonic Materials in PHYSICA B-CONDENSED MATTER, VOLUME: 404, ISSUE: 22
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TITLE: Electron accumulation at nonpolar and semipolar surfaces of wurtzite InN from generalized infrared ellipsometry Full Text
AUTHORS: Darakchieva, V; Schubert, M; Hofmann, T; Monemar, B; Ching Lien Hsiao; Ting Wei Liu; Li Chyong Chen; Schaff, WJ; Takagi, Y; Nanishi, Y;
PUBLISHED: 2009, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 95, ISSUE: 20
AUTHORS: Darakchieva, V; Schubert, M; Hofmann, T; Monemar, B; Ching Lien Hsiao; Ting Wei Liu; Li Chyong Chen; Schaff, WJ; Takagi, Y; Nanishi, Y;
PUBLISHED: 2009, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 95, ISSUE: 20
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TITLE: Europium doping of zincblende GaN by ion implantation Full Text
AUTHORS: Lorenz, K ; Roqan, IS; Franco, N; O'Donnell, KP; Darakchieva, V; Alves, E ; Trager Cowan, C; Martin, RW; As, DJ; Panfilova, M;
PUBLISHED: 2009, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 105, ISSUE: 11
AUTHORS: Lorenz, K ; Roqan, IS; Franco, N; O'Donnell, KP; Darakchieva, V; Alves, E ; Trager Cowan, C; Martin, RW; As, DJ; Panfilova, M;
PUBLISHED: 2009, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 105, ISSUE: 11
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TITLE: Free electron behavior in InN: On the role of dislocations and surface electron accumulation Full Text
AUTHORS: Darakchieva, V; Hofmann, T; Schubert, M; Sernelius, BE; Monemar, B; Persson, POA; Giuliani, F; Alves, E ; Lu, H; Schaff, WJ;
PUBLISHED: 2009, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 94, ISSUE: 2
AUTHORS: Darakchieva, V; Hofmann, T; Schubert, M; Sernelius, BE; Monemar, B; Persson, POA; Giuliani, F; Alves, E ; Lu, H; Schaff, WJ;
PUBLISHED: 2009, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 94, ISSUE: 2
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TITLE: Lattice parameters, deviations from Vegard's rule, and E-2 phonons in InAlN Full Text
AUTHORS: Darakchieva, V; Y Xie; Tasnadi, F; Abrikosov, IA; Hultman, L; Monemar, B; Kamimura, J; Kishino, K;
PUBLISHED: 2008, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 93, ISSUE: 26
AUTHORS: Darakchieva, V; Y Xie; Tasnadi, F; Abrikosov, IA; Hultman, L; Monemar, B; Kamimura, J; Kishino, K;
PUBLISHED: 2008, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 93, ISSUE: 26
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TITLE: Unravelling the free electron behavior in InN Full Text
AUTHORS: Darakchieva, V; Hofmann, T; Schubert, M; Sernelius, BE; Giuliani, F; Y Xie; Persson, POA; Monemar, B; Schaff, WJ; L Hsiao; C Chen; Nanishi, Y;
PUBLISHED: 2008, SOURCE: Conference on Optoelectronic and Microelectronic Materials and Devices in COMMAD: 2008 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS & DEVICES
AUTHORS: Darakchieva, V; Hofmann, T; Schubert, M; Sernelius, BE; Giuliani, F; Y Xie; Persson, POA; Monemar, B; Schaff, WJ; L Hsiao; C Chen; Nanishi, Y;
PUBLISHED: 2008, SOURCE: Conference on Optoelectronic and Microelectronic Materials and Devices in COMMAD: 2008 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS & DEVICES
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TITLE: Phonons and free-carrier properties of binary, ternary, and quaternary group-III nitride layers measured by infrared Spectroscopic Ellipsometry Full Text
AUTHORS: Kasic, A; Schubert, M; Off, J; Kuhn, B; Scholz, F; Einfeldt, S; Bottcher, T; Hommel, D; As, DJ; Kohler, U; Dadgar, A; Krost, A; Saito, Y; Nanishi, Y; Correia, MR ; Pereira, S ; Darakchieva, V; Monemar, B; Amano, H; Akasaki, I; ...More
PUBLISHED: 2003, SOURCE: Physica Status Solidi C: Conferences, ISSUE: 6 SPEC. ISS.
AUTHORS: Kasic, A; Schubert, M; Off, J; Kuhn, B; Scholz, F; Einfeldt, S; Bottcher, T; Hommel, D; As, DJ; Kohler, U; Dadgar, A; Krost, A; Saito, Y; Nanishi, Y; Correia, MR ; Pereira, S ; Darakchieva, V; Monemar, B; Amano, H; Akasaki, I; ...More
PUBLISHED: 2003, SOURCE: Physica Status Solidi C: Conferences, ISSUE: 6 SPEC. ISS.
