261
TITLE: Stopping power of H-1 and He-4 in lithium niobate  Full Text
AUTHORS: Barradas, NP; Marques, JG; Alves, E;
PUBLISHED: 2014, SOURCE: 21st International Conference on Ion Beam Analysis (IBA) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 332
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262
TITLE: IBA study of SiGe/SiO2 nanostructured multilayers
AUTHORS: Barradas, NP; Alves, E; Vieira, EMF; Parisini, A; Conde, O; Martin Sanchez, J; Rolo, AG; Chahboun, A ; Gomes, MJM ;
PUBLISHED: 2014, SOURCE: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 331
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263
TITLE: Modeling Evolution of Stains Caused by Collection of Dirt in Old Building Facades  Full Text
AUTHORS: Jorge Costa; Paulo, PV; Branco, FA ; de Brito, J ;
PUBLISHED: 2014, SOURCE: JOURNAL OF PERFORMANCE OF CONSTRUCTED FACILITIES, VOLUME: 28, ISSUE: 2
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264
TITLE: Performance of resistive-charge position sensitive detectors for RBS/Channeling applications  Full Text
AUTHORS: Miranda, PA; Wahl, U; Catarino, N; Ribeiro R da Silva; Alves, E;
PUBLISHED: 2014, SOURCE: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, VOLUME: 760
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265
TITLE: Determination of Ga auto-incorporation in nominal InAlN epilayers grown by MOCVD  Full Text
AUTHORS: Smith, MD; Taylor, E; Sadler, TC; Zubialevich, VZ; Lorenz, K; Li, HN; O'Connell, J; Alves, E; Holmes, JD; Martin, RW; Parbrook, PJ;
PUBLISHED: 2014, SOURCE: JOURNAL OF MATERIALS CHEMISTRY C, VOLUME: 2, ISSUE: 29
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266
TITLE: Thermal Properties of Holmium-Implanted Gold Films  Full Text
AUTHORS: Prasai, K; Alves, E; Bagliani, D; Basak B Yanardag; Biasotti, M; Galeazzi, M; Gatti, F; Ribeiro Gomes, MR; Rocha, J; Uprety, Y;
PUBLISHED: 2014, SOURCE: JOURNAL OF LOW TEMPERATURE PHYSICS, VOLUME: 176, ISSUE: 5-6
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267
TITLE: Intense luminescence emission from rare-earth-doped MoO3 nanoplates and lamellar crystals for optoelectronic applications  Full Text
AUTHORS: Vila, M; Diaz Guerra, C; Jerez, D; Lorenz, K; Piqueras, J; Alves, E;
PUBLISHED: 2014, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 47, ISSUE: 35
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268
TITLE: Structural and optical properties of Ga auto-incorporated InAlN epilayers  Full Text
AUTHORS: Taylor, E; Smith, MD; Sadler, TC; Lorenz, K; Li, HN; Alves, E; Parbrook, PJ; Martin, RW;
PUBLISHED: 2014, SOURCE: JOURNAL OF CRYSTAL GROWTH, VOLUME: 408
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269
TITLE: GaN:Pr3+ nanostructures for red solid state light emission
AUTHORS: Rodrigues, J; Ben Sedrine, N; Felizardo, M ; Soares, MJ; Alves, E; Neves, AJ; Fellmann, V; Tourbot, G; Auzelle, T; Daudin, B; Bockowski, M; Lorenz, K; Monteiro, T;
PUBLISHED: 2014, SOURCE: RSC ADVANCES, VOLUME: 4, ISSUE: 108
INDEXED IN: Scopus WOS CrossRef: 2
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270
TITLE: High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: Growth conditions, strain relaxation, and In incorporation kinetics  Full Text
AUTHORS: Valdueza Felip, S; Bellet Amalric, E; Nunez Cascajero, A; Wang, Y; P Chauvat; Ruterana, P; Pouget, S; Lorenz, K; Alves, E; Monroy, E;
PUBLISHED: 2014, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 116, ISSUE: 23
INDEXED IN: WOS
IN MY: ORCID
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