291
TITLE: The photoluminescence/excitation (PL/E) spectroscopy of Eu-implanted GaN  Full Text
AUTHORS: K.P O’Donnell; I.S Roqan; Ke Wang; Lorenz, K; Alves, E; Boćkowski, M;
PUBLISHED: 2011, SOURCE: Optical Materials, VOLUME: 33, ISSUE: 7
INDEXED IN: CrossRef
IN MY: ORCID
292
TITLE: Optimization Of A Mass Spectrometry Process
AUTHORS: José Lopes ; Corre^a C Alegria; Luís Redondo; Barradas, NP; Alves, E; Jorge Rocha; Floyd D McDaniel; Barney L Doyle;
PUBLISHED: 2011
INDEXED IN: CrossRef
IN MY: ORCID
293
TITLE: <title>Radiation damage formation and annealing in GaN and ZnO</title>
AUTHORS: Lorenz, K; Peres, M; Franco, N; Marques, JG; Miranda, SMC; Magalhães, S; Monteiro, T; Wesch, W; Alves, E; Wendler, E;
PUBLISHED: 2011, SOURCE: Oxide-based Materials and Devices II
INDEXED IN: CrossRef: 30
IN MY: ORCID
295
TITLE: Effect of annealing on AlN/GaN quantum dot heterostructures: advanced ion beam characterization and X-ray study of low-dimensional structures  Full Text
AUTHORS: Magalhães, S; Lorenz, K; Franco, N; Barradas, NP; Alves, E; Monteiro, T; Amstatt, B; Fellmann, V; Daudin, B;
PUBLISHED: 2010, SOURCE: Surface and Interface Analysis - Surf. Interface Anal., VOLUME: 42, ISSUE: 10-11
INDEXED IN: CrossRef: 3
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296
TITLE: Stopping power of 11B in Si and TiO2 measured with a bulk sample method and Bayesian inference data analysis  Full Text
AUTHORS: Siketić, Z; Bogdanović Radović, I; Alves, E; N.P Barradas;
PUBLISHED: 2010, SOURCE: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, VOLUME: 268, ISSUE: 11-12
INDEXED IN: CrossRef
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297
TITLE: Effects of Mg-ion implantation in α-Al2O3 and α-Al2O3:Mg crystals: Electrical conductivity and electronic structure changes  Full Text
AUTHORS: Tardío, M; Colera, I; Ramírez, R; Alves, E;
PUBLISHED: 2010, SOURCE: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, VOLUME: 268, ISSUE: 19
INDEXED IN: CrossRef
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298
TITLE: Functionalizing self-assembled GaN quantum dot superlattices by Eu-implantation  Full Text
AUTHORS: Magalhães, S; Peres, M; Fellmann, V; Daudin, B; Neves, AJ; Alves, E; Monteiro, T; Lorenz, K;
PUBLISHED: 2010, SOURCE: J. Appl. Phys. - Journal of Applied Physics, VOLUME: 108, ISSUE: 8
INDEXED IN: CrossRef: 10
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299
TITLE: Depth-resolved analysis of spontaneous phase separation in the growth of lattice-matched AlInN  Full Text
AUTHORS: Redondo-Cubero, A; Lorenz, K; Gago, R; Franco, N; M-A di Forte Poisson; Alves, E; Muñoz, E;
PUBLISHED: 2010, SOURCE: Journal of Physics D: Applied Physics - J. Phys. D: Appl. Phys., VOLUME: 43, ISSUE: 5
INDEXED IN: CrossRef
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300
TITLE: High Mobility a-IGO Films Produced at Room Temperature and Their Application in TFTs
AUTHORS: Gonçalves, G; Barquinha, P; Pereira, L; Franco, N; Alves, E; Martins, R; Fortunato, E;
PUBLISHED: 2010, SOURCE: Electrochemical and Solid-State Letters - Electrochem. Solid-State Lett., VOLUME: 13, ISSUE: 1
INDEXED IN: CrossRef
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Page 30 of 36. Total results: 357.