Elvira Maria Correia Fortunato
AuthID: R-000-4M5
491
TITLE: Role of the i layer surface properties on the performance of a-Si:H Schottky barrier photodiodes Full Text
AUTHORS: Águas, H; Fortunato, E; Martins, R;
PUBLISHED: 2002, SOURCE: Sensors and Actuators A: Physical, VOLUME: 99, ISSUE: 1-2
AUTHORS: Águas, H; Fortunato, E; Martins, R;
PUBLISHED: 2002, SOURCE: Sensors and Actuators A: Physical, VOLUME: 99, ISSUE: 1-2
492
TITLE: Study of the Sensing Mechanism of SnO<sub>2</sub> Thin-Film Gas Sensors Using Hall Effect Measurements
AUTHORS: Lopes, A; Patrícia Nunes; Paula M Vilarinho; Regina da Conceição Corredeira Monteiro; Elvira Fortunato; Rodrigo Martins;
PUBLISHED: 2002, SOURCE: Key Engineering Materials, VOLUME: 230-232
AUTHORS: Lopes, A; Patrícia Nunes; Paula M Vilarinho; Regina da Conceição Corredeira Monteiro; Elvira Fortunato; Rodrigo Martins;
PUBLISHED: 2002, SOURCE: Key Engineering Materials, VOLUME: 230-232
493
TITLE: Thin film metal oxide semiconductors deposited on polymeric substrates
AUTHORS: Fortunato, E; Nunes, P; Marques, A; Costa, D; Aguas, H; Ferreira, I; Costa, MEV; Martins, R;
PUBLISHED: 2001, SOURCE: Transport and Microstructural Phenomena in Oxide Electronics in Materials Research Society Symposium - Proceedings, VOLUME: 666
AUTHORS: Fortunato, E; Nunes, P; Marques, A; Costa, D; Aguas, H; Ferreira, I; Costa, MEV; Martins, R;
PUBLISHED: 2001, SOURCE: Transport and Microstructural Phenomena in Oxide Electronics in Materials Research Society Symposium - Proceedings, VOLUME: 666
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ORCID494
TITLE: New Steps to Improve a-Si:H Device Stability by Design of the Interfaces Full Text
AUTHORS: Martins, R; Ferreira, I; Cabrita, A; Águas, H; Silva, V; Fortunato, E;
PUBLISHED: 2001, SOURCE: Advanced Engineering Materials - Adv. Eng. Mater., VOLUME: 3, ISSUE: 3
AUTHORS: Martins, R; Ferreira, I; Cabrita, A; Águas, H; Silva, V; Fortunato, E;
PUBLISHED: 2001, SOURCE: Advanced Engineering Materials - Adv. Eng. Mater., VOLUME: 3, ISSUE: 3
495
TITLE: Application of Amorphous Silicon Thin-Film Position-Sensitive Detector to Optical Rules Full Text
AUTHORS: Martins, R; Teodoro, P; Soares, F; Ferreira, I; Guimarães, N; Fortunato, E; Borges, J; José, G; Groth, A; Schultze, L; Berndt, D; Reichel, F; Stam, F;
PUBLISHED: 2001, SOURCE: Advanced Engineering Materials - Adv. Eng. Mater., VOLUME: 3, ISSUE: 3
AUTHORS: Martins, R; Teodoro, P; Soares, F; Ferreira, I; Guimarães, N; Fortunato, E; Borges, J; José, G; Groth, A; Schultze, L; Berndt, D; Reichel, F; Stam, F;
PUBLISHED: 2001, SOURCE: Advanced Engineering Materials - Adv. Eng. Mater., VOLUME: 3, ISSUE: 3
496
TITLE: Role of ion bombardment on the properties of a-Si:H films Full Text
AUTHORS: Hugo Águas; Martins, R; Fortunato, E;
PUBLISHED: 2001, SOURCE: Vacuum, VOLUME: 60, ISSUE: 1-2
AUTHORS: Hugo Águas; Martins, R; Fortunato, E;
PUBLISHED: 2001, SOURCE: Vacuum, VOLUME: 60, ISSUE: 1-2
497
TITLE: Fast and cheap method to qualitatively measure the thickness and uniformity of ZrO2 thin films Full Text
AUTHORS: Hugo Águas; António Marques; Rodrigo Martins; Elvira Fortunato;
PUBLISHED: 2001, SOURCE: Materials Science in Semiconductor Processing, VOLUME: 4, ISSUE: 1-3
AUTHORS: Hugo Águas; António Marques; Rodrigo Martins; Elvira Fortunato;
PUBLISHED: 2001, SOURCE: Materials Science in Semiconductor Processing, VOLUME: 4, ISSUE: 1-3
498
TITLE: Influence of the Plasma Regime on the Structural, Optical, Electrical and Morphological Properties of a-Si:H Thin Films
AUTHORS: Hugo Águas; Rodrigo Martins; Yuri Nunes ; Manuel J.P Maneira; Elvira Fortunato;
PUBLISHED: 2001, SOURCE: Materials Science Forum, VOLUME: 382
AUTHORS: Hugo Águas; Rodrigo Martins; Yuri Nunes ; Manuel J.P Maneira; Elvira Fortunato;
PUBLISHED: 2001, SOURCE: Materials Science Forum, VOLUME: 382
499
TITLE: Plasma diagnostics of a PECVD system using different R.F. electrode configurations Full Text
AUTHORS: Águas, H; Martins, R; Fortunato, E;
PUBLISHED: 2000, SOURCE: Vacuum, VOLUME: 56, ISSUE: 1
AUTHORS: Águas, H; Martins, R; Fortunato, E;
PUBLISHED: 2000, SOURCE: Vacuum, VOLUME: 56, ISSUE: 1
500
TITLE: Study of the effect of different plasma-enhanced chemical vapour deposition reactor configurations on the properties of hydrogenated amorphous silicon thin films Full Text
AUTHORS: águas H.; Silva V.; Ferreira I.; Fortunato E.; Martins R.;
PUBLISHED: 2000, SOURCE: Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties, VOLUME: 80, ISSUE: 4
AUTHORS: águas H.; Silva V.; Ferreira I.; Fortunato E.; Martins R.;
PUBLISHED: 2000, SOURCE: Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties, VOLUME: 80, ISSUE: 4
