21
TITLE: Energy levels of atomic hydrogen in germanium from ab-initio calculations  Full Text
AUTHORS: Almeida, LM; Coutinho, J ; Torres, VJB ; Jones, R; Briddon, PR;
PUBLISHED: 2006, SOURCE: Symposium on Germanium-Based Semiconductors from Materials to Devices held at the 2006 EMRS Spring Meeting in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 9, ISSUE: 4-5
INDEXED IN: Scopus WOS CrossRef: 3
22
TITLE: Vacancy-dioxygen centers in Si-rich SiGe alloys  Full Text
AUTHORS: Khirunenko, LI; Yu. V Pomozov; Sosnin, MG; Trypachko, MO; Torres, VJB ; Coutinho, J ; Jones, R; Briddon, PR; Abrosimov, NV; Riemann, H;
PUBLISHED: 2006, SOURCE: Symposium on Germanium-Based Semiconductors from Materials to Devices held at the 2006 EMRS Spring Meeting in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 9, ISSUE: 4-5
INDEXED IN: Scopus WOS CrossRef
23
TITLE: Ab initio study of CsI and its surface
AUTHORS: Ribeiro, RM; Coutinho, J ; Torres, VJB ; Jones, R; Sque, SJ; Oberg, S; Shaw, MJ; Briddon, PR;
PUBLISHED: 2006, SOURCE: PHYSICAL REVIEW B, VOLUME: 74, ISSUE: 3
INDEXED IN: Scopus WOS CrossRef: 9
24
TITLE: First-principles investigation of a bistable boron-oxygen interstitial pair in Si
AUTHORS: Carvalho, A; Jones, R; Sanati, M; Estreicher, SK; Coutinho, J ; Briddon, PR;
PUBLISHED: 2006, SOURCE: PHYSICAL REVIEW B, VOLUME: 73, ISSUE: 24
INDEXED IN: Scopus WOS CrossRef: 18
25
TITLE: Donor-vacancy complexes in Ge: Cluster and supercell calculations
AUTHORS: Coutinho, J ; Oberg, S; Torres, VJB ; Barroso, M ; Jones, R; Briddon, PR;
PUBLISHED: 2006, SOURCE: PHYSICAL REVIEW B, VOLUME: 73, ISSUE: 23
INDEXED IN: Scopus WOS CrossRef: 51
26
TITLE: Early SiO2 precipitates in Si: Vacancy-oxygen versus interstitial-oxygen clusters  Full Text
AUTHORS: Torres, VJB ; Coutinho, J ; Jones, R; Barroso, M ; Oberg, S; Briddon, PR;
PUBLISHED: 2006, SOURCE: 23rd International Conference on Defects in Semiconductors in PHYSICA B-CONDENSED MATTER, VOLUME: 376, ISSUE: 1
INDEXED IN: Scopus WOS CrossRef: 11
27
TITLE: Theory of anharmonicity on bond-centered hydrogen oscillators in silicon  Full Text
AUTHORS: Coutinho, J ; Torres, VJB ; Pereira, RN ; Nielsen, BB; Jones, R; Briddon, PR;
PUBLISHED: 2006, SOURCE: 23rd International Conference on Defects in Semiconductors in PHYSICA B-CONDENSED MATTER, VOLUME: 376, ISSUE: 1
INDEXED IN: Scopus WOS CrossRef: 1
28
TITLE: Calculation of deep carrier traps in a divacancy in germanium crystals  Full Text
AUTHORS: Coutinho, J ; Torres, VJB ; Jones, R; Carvalho, A; Oberg, S; Briddon, PR;
PUBLISHED: 2006, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 88, ISSUE: 9
INDEXED IN: Scopus WOS CrossRef: 18
29
TITLE: Local vibrations of substitutional carbon in SiGe alloys
AUTHORS: Khirunenko, L; Pomozov, Y; Sosnin, M; Torres, VJB ; Coutinho, J ; Jones, R; Abrosimov, NV; Riemann, H; Briddon, PR;
PUBLISHED: 2006, SOURCE: 3rd International Materials Symposium/12th Meeting of the Sociedad-Portuguesa-da-Materials (Materials 2005/SPM) in ADVANCED MATERIALS FORUM III, PTS 1 AND 2, VOLUME: 514-516, ISSUE: PART 1
INDEXED IN: Scopus WOS
30
TITLE: Electronic structure and Jahn-Teller instabilities in a single vacancy in Ge  Full Text
AUTHORS: Coutinho, J ; Jones, R; Torres, VJB ; Barroso, M ; Oberg, S; Briddon, PR;
PUBLISHED: 2005, SOURCE: JOURNAL OF PHYSICS-CONDENSED MATTER, VOLUME: 17, ISSUE: 48
INDEXED IN: Scopus WOS CrossRef: 54
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