Robert Francis Jones
AuthID: R-001-FHB
31
TITLE: Local vibrations on hydrogen dimers in dilute SiGe crystalline solutions Full Text
AUTHORS: Coutinho, J ; Torres, VJB ; Pereira, RN ; Jones, R; Oberg, S; Briddon, PR;
PUBLISHED: 2005, SOURCE: Symposium on Materials Science and Device Issues for Futrue Si-Based Technologies held at the 2005 EMRS Meeting in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 124, ISSUE: SUPPL.
AUTHORS: Coutinho, J ; Torres, VJB ; Pereira, RN ; Jones, R; Oberg, S; Briddon, PR;
PUBLISHED: 2005, SOURCE: Symposium on Materials Science and Device Issues for Futrue Si-Based Technologies held at the 2005 EMRS Meeting in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 124, ISSUE: SUPPL.
32
TITLE: Density-functional study of small interstitial clusters in Si: Comparison with experiments
AUTHORS: Carvalho, A; Jones, R; Coutinho, J ; Briddon, PR;
PUBLISHED: 2005, SOURCE: PHYSICAL REVIEW B, VOLUME: 72, ISSUE: 15
AUTHORS: Carvalho, A; Jones, R; Coutinho, J ; Briddon, PR;
PUBLISHED: 2005, SOURCE: PHYSICAL REVIEW B, VOLUME: 72, ISSUE: 15
33
TITLE: Anharmonicity and lattice coupling of bond-centered hydrogen and interstitial oxygen defects in monoisotopic silicon crystals
AUTHORS: Pereira, RN ; Nielsen, BB; Coutinho, J ; Torres, VJB ; Jones, R; Ohya, T; Itoh, KM; Briddon, PR;
PUBLISHED: 2005, SOURCE: PHYSICAL REVIEW B, VOLUME: 72, ISSUE: 11
AUTHORS: Pereira, RN ; Nielsen, BB; Coutinho, J ; Torres, VJB ; Jones, R; Ohya, T; Itoh, KM; Briddon, PR;
PUBLISHED: 2005, SOURCE: PHYSICAL REVIEW B, VOLUME: 72, ISSUE: 11
34
TITLE: Vibrational properties of elemental hydrogen centres in Si, Ge and dilute SiGe alloys Full Text
AUTHORS: Balsas, A ; Torres, VJB ; Coutinho, J ; Jones, R; Hourahine, B; Briddon, PR; Barroso, M ;
PUBLISHED: 2005, SOURCE: 1st International Workshop on Coordination Action on Defects Relevent to Engineering Silicon-Based Devices in JOURNAL OF PHYSICS-CONDENSED MATTER, VOLUME: 17, ISSUE: 22
AUTHORS: Balsas, A ; Torres, VJB ; Coutinho, J ; Jones, R; Hourahine, B; Briddon, PR; Barroso, M ;
PUBLISHED: 2005, SOURCE: 1st International Workshop on Coordination Action on Defects Relevent to Engineering Silicon-Based Devices in JOURNAL OF PHYSICS-CONDENSED MATTER, VOLUME: 17, ISSUE: 22
INDEXED IN: 
WOS
WOS35
TITLE: Electrical activity of Er and Er-O centers in silicon
AUTHORS: Prezzi, D; Eberlein, TAG; Jones, R; Filhol, JS; Coutinho, J ; Shaw, MJ; Briddon, PR;
PUBLISHED: 2005, SOURCE: PHYSICAL REVIEW B, VOLUME: 71, ISSUE: 24
AUTHORS: Prezzi, D; Eberlein, TAG; Jones, R; Filhol, JS; Coutinho, J ; Shaw, MJ; Briddon, PR;
PUBLISHED: 2005, SOURCE: PHYSICAL REVIEW B, VOLUME: 71, ISSUE: 24
36
TITLE: Ab initio calculation of the local vibrational modes of the interstitial boron-interstitial oxygen defect in Si Full Text
AUTHORS: Carvalho, A; Jones, R; Coutinho, J ; Briddon, PR;
PUBLISHED: 2005, SOURCE: JOURNAL OF PHYSICS-CONDENSED MATTER, VOLUME: 17, ISSUE: 17
AUTHORS: Carvalho, A; Jones, R; Coutinho, J ; Briddon, PR;
PUBLISHED: 2005, SOURCE: JOURNAL OF PHYSICS-CONDENSED MATTER, VOLUME: 17, ISSUE: 17
37
TITLE: Metastable VO2 complexes in silicon: experimental and theoretical modeling studies
AUTHORS: Murin, LI; Lindstrom, J; Markevich, VP; Medvedeva, IF; Torres, VJB ; Coutinho, J ; Jones, R; Briddon, PR;
PUBLISHED: 2005, SOURCE: 11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2005) in GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XI, VOLUME: 108-109
AUTHORS: Murin, LI; Lindstrom, J; Markevich, VP; Medvedeva, IF; Torres, VJB ; Coutinho, J ; Jones, R; Briddon, PR;
PUBLISHED: 2005, SOURCE: 11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2005) in GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XI, VOLUME: 108-109
INDEXED IN: 
Scopus WOS
Scopus WOS38
TITLE: Lattice isotope effects on optical transitions in silicon
AUTHORS: Hayama, S; Davies, G; Tan, J; Coutinho, J ; Jones, R; Itoh, KM;
PUBLISHED: 2004, SOURCE: PHYSICAL REVIEW B, VOLUME: 70, ISSUE: 3
AUTHORS: Hayama, S; Davies, G; Tan, J; Coutinho, J ; Jones, R; Itoh, KM;
PUBLISHED: 2004, SOURCE: PHYSICAL REVIEW B, VOLUME: 70, ISSUE: 3
39
TITLE: Optically active erbium-oxygen complexes in GaAs Full Text
AUTHORS: Coutinho, J ; Jones, R; Shaw, MJ; Briddon, PR; Oberg, S;
PUBLISHED: 2004, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 84, ISSUE: 10
AUTHORS: Coutinho, J ; Jones, R; Shaw, MJ; Briddon, PR; Oberg, S;
PUBLISHED: 2004, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 84, ISSUE: 10
40
TITLE: Structure and properties of vacancy-oxygen complexes in Si1-xGex alloys
AUTHORS: Markevich, VP; Peaker, AR; Coutinho, J ; Jones, R; Torres, VJB ; Oberg, S; Briddon, PR; Murin, LI; Dobaczewski, L; Abrosimov, NV;
PUBLISHED: 2004, SOURCE: PHYSICAL REVIEW B, VOLUME: 69, ISSUE: 12
AUTHORS: Markevich, VP; Peaker, AR; Coutinho, J ; Jones, R; Torres, VJB ; Oberg, S; Briddon, PR; Murin, LI; Dobaczewski, L; Abrosimov, NV;
PUBLISHED: 2004, SOURCE: PHYSICAL REVIEW B, VOLUME: 69, ISSUE: 12
