Robert Francis Jones
AuthID: R-001-FHB
41
TITLE: The formation, dissociation and electrical activity of divacancy-oxygen complexes in Si Full Text
AUTHORS: Coutinho, J ; Jones, R; Oberg, S; Briddon, PR;
PUBLISHED: 2003, SOURCE: 22nd International Conference on Defects in Semiconductors (ICDS-22) in PHYSICA B-CONDENSED MATTER, VOLUME: 340
AUTHORS: Coutinho, J ; Jones, R; Oberg, S; Briddon, PR;
PUBLISHED: 2003, SOURCE: 22nd International Conference on Defects in Semiconductors (ICDS-22) in PHYSICA B-CONDENSED MATTER, VOLUME: 340
42
TITLE: Interaction between oxygen and single self-interstitials in silicon Full Text
AUTHORS: Pinho, N; Coutinho, J ; Jones, R; Briddon, PR;
PUBLISHED: 2003, SOURCE: 22nd International Conference on Defects in Semiconductors (ICDS-22) in PHYSICA B-CONDENSED MATTER, VOLUME: 340
AUTHORS: Pinho, N; Coutinho, J ; Jones, R; Briddon, PR;
PUBLISHED: 2003, SOURCE: 22nd International Conference on Defects in Semiconductors (ICDS-22) in PHYSICA B-CONDENSED MATTER, VOLUME: 340
43
TITLE: Electronic properties of vacancy-oxygen complexes in SiGe alloys Full Text
AUTHORS: Markevich, VP; Peaker, AR; Murin, LI; Coutinho, J ; Torres, VJB ; Jones, R; Oberg, S; Briddon, PR; Auret, FD; Abrosimov, NV;
PUBLISHED: 2003, SOURCE: 22nd International Conference on Defects in Semiconductors (ICDS-22) in PHYSICA B-CONDENSED MATTER, VOLUME: 340
AUTHORS: Markevich, VP; Peaker, AR; Murin, LI; Coutinho, J ; Torres, VJB ; Jones, R; Oberg, S; Briddon, PR; Auret, FD; Abrosimov, NV;
PUBLISHED: 2003, SOURCE: 22nd International Conference on Defects in Semiconductors (ICDS-22) in PHYSICA B-CONDENSED MATTER, VOLUME: 340
44
TITLE: Effect of stress on the energy levels of the vacancy-oxygen-hydrogen complex in Si
AUTHORS: Coutinho, J ; Andersen, O; Dobaczewski, L; Nielsen, KB; Peaker, AR; Jones, R; Oberg, S; Briddon, PR;
PUBLISHED: 2003, SOURCE: PHYSICAL REVIEW B, VOLUME: 68, ISSUE: 18
AUTHORS: Coutinho, J ; Andersen, O; Dobaczewski, L; Nielsen, KB; Peaker, AR; Jones, R; Oberg, S; Briddon, PR;
PUBLISHED: 2003, SOURCE: PHYSICAL REVIEW B, VOLUME: 68, ISSUE: 18
45
TITLE: Electronic structure of divacancy-hydrogen complexes in silicon Full Text
AUTHORS: Coutinho, J ; Torres, VJB ; Jones, R; Oberg, S; Briddon, PR;
PUBLISHED: 2003, SOURCE: Workshop on the Physics of Group IV Materials in JOURNAL OF PHYSICS-CONDENSED MATTER, VOLUME: 15, ISSUE: 39
AUTHORS: Coutinho, J ; Torres, VJB ; Jones, R; Oberg, S; Briddon, PR;
PUBLISHED: 2003, SOURCE: Workshop on the Physics of Group IV Materials in JOURNAL OF PHYSICS-CONDENSED MATTER, VOLUME: 15, ISSUE: 39
46
TITLE: Vibrational modes of sulfur defects in GaP
AUTHORS: Leigh, RS; Sangster, MJL; Newman, RC; Goss, JP; Jones, R; Torres, VJB ; Oberg, S; Briddon, PR;
PUBLISHED: 2003, SOURCE: PHYSICAL REVIEW B, VOLUME: 68, ISSUE: 3
AUTHORS: Leigh, RS; Sangster, MJL; Newman, RC; Goss, JP; Jones, R; Torres, VJB ; Oberg, S; Briddon, PR;
PUBLISHED: 2003, SOURCE: PHYSICAL REVIEW B, VOLUME: 68, ISSUE: 3
47
TITLE: Electrical activity of chalcogen-hydrogen defects in silicon
AUTHORS: Coutinho, J ; Torres, VJB ; Jones, R; Briddon, PR;
PUBLISHED: 2003, SOURCE: PHYSICAL REVIEW B, VOLUME: 67, ISSUE: 3
AUTHORS: Coutinho, J ; Torres, VJB ; Jones, R; Briddon, PR;
PUBLISHED: 2003, SOURCE: PHYSICAL REVIEW B, VOLUME: 67, ISSUE: 3
48
TITLE: Shallow donor activity of S-H, Se-H, and Te-H complexes in silicon
AUTHORS: Coutinho, J; Torres, VJB; Jones, R; Resende, A; Briddon, PR;
PUBLISHED: 2003, SOURCE: Proceedings 10th International Conference on Shallow Level Centers in Semiconductors (SLCS-10) in Physica Status Solidi Conferences, ISSUE: 2
AUTHORS: Coutinho, J; Torres, VJB; Jones, R; Resende, A; Briddon, PR;
PUBLISHED: 2003, SOURCE: Proceedings 10th International Conference on Shallow Level Centers in Semiconductors (SLCS-10) in Physica Status Solidi Conferences, ISSUE: 2
INDEXED IN: 
Scopus
Scopus49
TITLE: Interstitial carbon-oxygen center and hydrogen related shallow thermal donors in Si
AUTHORS: Coutinho, J ; Jones, R; Briddon, PR; Oberg, S; Murin, LI; Markevich, VP; Lindstrom, JL;
PUBLISHED: 2002, SOURCE: Physical Review B - Condensed Matter and Materials Physics, VOLUME: 65, ISSUE: 1
AUTHORS: Coutinho, J ; Jones, R; Briddon, PR; Oberg, S; Murin, LI; Markevich, VP; Lindstrom, JL;
PUBLISHED: 2002, SOURCE: Physical Review B - Condensed Matter and Materials Physics, VOLUME: 65, ISSUE: 1
INDEXED IN: Scopus
Scopus50
TITLE: Mg-H and Be-H complexes in cubic boron nitride
AUTHORS: Pinho, NMC; Torres, VJB ; Jones, R; Briddon, PR; Oberg, S;
PUBLISHED: 2001, SOURCE: Conference on Doping Issues in Wide Band-Gap Semiconductors in JOURNAL OF PHYSICS-CONDENSED MATTER, VOLUME: 13, ISSUE: 40
AUTHORS: Pinho, NMC; Torres, VJB ; Jones, R; Briddon, PR; Oberg, S;
PUBLISHED: 2001, SOURCE: Conference on Doping Issues in Wide Band-Gap Semiconductors in JOURNAL OF PHYSICS-CONDENSED MATTER, VOLUME: 13, ISSUE: 40
