Robert Francis Jones
AuthID: R-001-FHB
51
TITLE: Isotopic effects on vibrational modes of thermal double donors in Si and Ge Full Text
AUTHORS: Murin, LI; Lindstrom, JL; Markevich, VP; Hallberg, T; Litvinov, VV; Coutinho, J ; Jones, R; Briddon, PR; Oberg, S;
PUBLISHED: 2001, SOURCE: Physica B: Condensed Matter, VOLUME: 308-310
AUTHORS: Murin, LI; Lindstrom, JL; Markevich, VP; Hallberg, T; Litvinov, VV; Coutinho, J ; Jones, R; Briddon, PR; Oberg, S;
PUBLISHED: 2001, SOURCE: Physica B: Condensed Matter, VOLUME: 308-310
52
TITLE: Over-coordinated oxygen in the interstitial carbon-oxygen complex Full Text
AUTHORS: Coutinho, J ; Jones, R; Briddon, PR; Oberg, S; Murin, LI; Markevich, VP; Lindstrom, JL;
PUBLISHED: 2001, SOURCE: Physica B: Condensed Matter, VOLUME: 308-310
AUTHORS: Coutinho, J ; Jones, R; Briddon, PR; Oberg, S; Murin, LI; Markevich, VP; Lindstrom, JL;
PUBLISHED: 2001, SOURCE: Physica B: Condensed Matter, VOLUME: 308-310
53
TITLE: Thermal double donors in Si and Ge Full Text
AUTHORS: Jones, R; Coutinho, J ; Oberg, S; Briddon, PR;
PUBLISHED: 2001, SOURCE: Physica B: Condensed Matter, VOLUME: 308-310
AUTHORS: Jones, R; Coutinho, J ; Oberg, S; Briddon, PR;
PUBLISHED: 2001, SOURCE: Physica B: Condensed Matter, VOLUME: 308-310
54
TITLE: Oxygen and dioxygen centers in Si and Ge: Density-functional calculations
AUTHORS: Coutinho, J ; Jones, R; Briddon, PR; Oberg, S;
PUBLISHED: 2000, SOURCE: Physical Review B - Condensed Matter and Materials Physics, VOLUME: 62, ISSUE: 16
AUTHORS: Coutinho, J ; Jones, R; Briddon, PR; Oberg, S;
PUBLISHED: 2000, SOURCE: Physical Review B - Condensed Matter and Materials Physics, VOLUME: 62, ISSUE: 16
55
TITLE: Local vibrational mode bands of V-O-H complexes in silicon Full Text
AUTHORS: Markevich, VP; Murin, LI; Suezawa, M; Lindstrom, JL; Coutinho, J ; Jones, R; Briddon, PR; Oberg, S;
PUBLISHED: 1999, SOURCE: Proceedings of the 1999 20th International Conference on Defects in Semiconductors (ICDS-20) in Physica B: Condensed Matter, VOLUME: 273-274
AUTHORS: Markevich, VP; Murin, LI; Suezawa, M; Lindstrom, JL; Coutinho, J ; Jones, R; Briddon, PR; Oberg, S;
PUBLISHED: 1999, SOURCE: Proceedings of the 1999 20th International Conference on Defects in Semiconductors (ICDS-20) in Physica B: Condensed Matter, VOLUME: 273-274
56
TITLE: Nitrogen-hydrogen defects in GaP Full Text
AUTHORS: Dixon, P; Richardson, D; Jones, R; Latham, CD; Oberg, S; Torres, VJB ; Briddon, PR;
PUBLISHED: 1998, SOURCE: 8th International Conference on Shallow-Level Centres in Semiconductors (SLCS-(*) in PHYSICA STATUS SOLIDI B-BASIC RESEARCH, VOLUME: 210, ISSUE: 2
AUTHORS: Dixon, P; Richardson, D; Jones, R; Latham, CD; Oberg, S; Torres, VJB ; Briddon, PR;
PUBLISHED: 1998, SOURCE: 8th International Conference on Shallow-Level Centres in Semiconductors (SLCS-(*) in PHYSICA STATUS SOLIDI B-BASIC RESEARCH, VOLUME: 210, ISSUE: 2
57
TITLE: Dynamic properties of interstitial carbon and carbon-carbon pair defects in silicon
AUTHORS: Leary, P; Jones, R; Oberg, S; Torres, VJB ;
PUBLISHED: 1997, SOURCE: PHYSICAL REVIEW B, VOLUME: 55, ISSUE: 4
AUTHORS: Leary, P; Jones, R; Oberg, S; Torres, VJB ;
PUBLISHED: 1997, SOURCE: PHYSICAL REVIEW B, VOLUME: 55, ISSUE: 4
58
TITLE: Theory of nitrogen-hydrogen complexes in GaP
AUTHORS: Torres, VJB ; Oberg, S; Jones, R;
PUBLISHED: 1997, SOURCE: 19th International Conference on Defects in Semiconductors (ICDS-19) in DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3, VOLUME: 258-2, ISSUE: PART 2
AUTHORS: Torres, VJB ; Oberg, S; Jones, R;
PUBLISHED: 1997, SOURCE: 19th International Conference on Defects in Semiconductors (ICDS-19) in DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3, VOLUME: 258-2, ISSUE: PART 2
INDEXED IN: 
Scopus 
WOS
Scopus WOS59
TITLE: Theory of nitrogen aggregates in diamond: The H3 and H4 defects
AUTHORS: Jones, R; Torres, VJB; Briddon, PR; Oberg, S;
PUBLISHED: 1994, SOURCE: Proceedings of the 17th International Conference on Defects in Semiconductors. Part 1 (of 3) in Materials Science Forum, VOLUME: 143-4, ISSUE: pt 1
AUTHORS: Jones, R; Torres, VJB; Briddon, PR; Oberg, S;
PUBLISHED: 1994, SOURCE: Proceedings of the 17th International Conference on Defects in Semiconductors. Part 1 (of 3) in Materials Science Forum, VOLUME: 143-4, ISSUE: pt 1
INDEXED IN: Scopus
Scopus