11
TITLE: Analysis of the Tb3+ recombination in ion implanted AlxGa1-xN (0 <= x <= 1) layers  Full Text
AUTHORS: Rodrigues, J; Fialho, M; Magalhaes, S; Correia, MR; Rino, L; Alves, E; Neves, AJ; Lorenz, K; Monteiro, T;
PUBLISHED: 2016, SOURCE: JOURNAL OF LUMINESCENCE, VOLUME: 178
INDEXED IN: Scopus WOS CrossRef: 3
12
TITLE: Composition, structure and morphology of Al1-xInxN thin films grown on Al1-yGayN templates with different GaN contents  Full Text
AUTHORS: Magalhaes, S; Watson, IM; Pereira, S; Franco, N; Tan, LT; Martin, RW; O'Donnell, KP; Alves, E; Araujo, JP ; Monteiro, T; Lorenz, K;
PUBLISHED: 2015, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 48, ISSUE: 1
INDEXED IN: Scopus WOS CrossRef: 7
13
TITLE: Determination of the Be-9(He-3,p(i))B-11 (i=0,1,2,3) cross section at 135 degrees in the energy range 1-2.5 MeV  Full Text
AUTHORS: Barradas, NP; Catarino, N; Mateus, R; Magalhaes, S; Alves, E; Siketic, Z; Bogdanovic B Radovic;
PUBLISHED: 2015, SOURCE: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 346
INDEXED IN: Scopus WOS CrossRef
14
TITLE: Analysis of the stability of InGaN/GaN multiquantum wells against ion beam intermixing  Full Text
AUTHORS: Redondo Cubero, A; Lorenz, K; Wendler, E; Magalhaes, S; Alves, E; Carvalho, D; Ben, T; Morales, FM; Garcia, R; O'Donnell, KP; Wetzel, C;
PUBLISHED: 2015, SOURCE: NANOTECHNOLOGY, VOLUME: 26, ISSUE: 42
INDEXED IN: Scopus WOS
15
TITLE: The Role of Edge Dislocations on the Red Luminescence of ZnO Films Deposited by RF-Sputtering
AUTHORS: Rocio Felix; Marco Peres; Sergio Magalhaes; Maria Rosario Correia; Armando Lourenco; Teresa Monteiro; Rafael Garcia; Francisco M Morales;
PUBLISHED: 2015, SOURCE: JOURNAL OF NANOMATERIALS
INDEXED IN: WOS
16
TITLE: Disorder induced violet/blue luminescence in rf-deposited ZnO films  Full Text
AUTHORS: Peres, M; Magalhaes, S; Soares, MR; Soares, MJ ; Rino, L; Alves, E ; Lorenz, K; Correia, MR ; Lourenco, AC; Monteiro, T ;
PUBLISHED: 2013, SOURCE: E-MRS ICAM IUMRS Spring Meeting / Symposium T on Physics and Applications of Novel Gain Materials Based on Nitrogen and Bismuth Containing III-V Compounds in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 4, VOLUME: 10, ISSUE: 4
INDEXED IN: Scopus WOS CrossRef: 9
17
TITLE: Wettability and Nanotribological Response of Silicon Surfaces Functionalized by Ion Implantation
AUTHORS: Bruno Nunes; Sergio Magalhaes; Nuno Franco; Eduardo Alves ; Ana Paula Serro ; Rogerio Colaco ;
PUBLISHED: 2013, SOURCE: 6th International Materials Symposium (MATERIALS 2011)/15th Meeting of SPM in ADVANCED MATERIALS FORUM VI, PTS 1 AND 2, VOLUME: 730-732
INDEXED IN: Scopus WOS CrossRef
18
TITLE: Microstructure and nanomechanical properties of Fe+ implanted silicon  Full Text
AUTHORS: Nunes, B; Magalhaes, S; Franco, N; Alves, E ; Colaco, R;
PUBLISHED: 2013, SOURCE: APPLIED SURFACE SCIENCE, VOLUME: 284
INDEXED IN: Scopus WOS CrossRef
19
TITLE: Lattice site location and luminescence studies of AlxGa1-xN alloys doped with thulium ions  Full Text
AUTHORS: Fialho, M; Lorenz, K ; Magalhaes, S; Rodrigues, J; Santos, NF; Monteiro, T; Alves, E ;
PUBLISHED: 2013, SOURCE: 18th International Conference on Ion Beam Modifications of Materials (IBMM) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 307
INDEXED IN: Scopus WOS CrossRef: 4
20
TITLE: AlN content influence on the properties of AlxGa1-xN doped with Pr ions  Full Text
AUTHORS: Fialho, M; Magalhaes, S; Alves, LC ; Marques, C; Maalej, R; Monteiro, T ; Lorenz, K ; Alves, E ;
PUBLISHED: 2012, SOURCE: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 273
INDEXED IN: Scopus WOS CrossRef: 3
Page 2 of 4. Total results: 36.