Sérgio Nuno Canteiro de Magalhães
AuthID: R-001-JX8
21
TITLE: Optical doping of AlxGa1-xN compounds by Ion Implantation of Tm ions Full Text
AUTHORS: Fialho, M; Lorenz, K; Magalhaes, S; Redondo Cubero, A; Rodrigues, J; Santos, NF; Monteiro, T ; Alves, E ;
PUBLISHED: 2012, SOURCE: 19th International Conference on Ion Implantation Technology (IIT) in ION IMPLANTATION TECHNOLOGY 2012, VOLUME: 1496
AUTHORS: Fialho, M; Lorenz, K; Magalhaes, S; Redondo Cubero, A; Rodrigues, J; Santos, NF; Monteiro, T ; Alves, E ;
PUBLISHED: 2012, SOURCE: 19th International Conference on Ion Implantation Technology (IIT) in ION IMPLANTATION TECHNOLOGY 2012, VOLUME: 1496
22
TITLE: The role of the annealing temperature on the optical and structural properties of Eu doped GaN/AlN QD Full Text
AUTHORS: Peres, M; Magalhaes, S; Rodrigues, J; Soares, MJ ; Fellmann, V; Neves, AJ ; Alves, E ; Daudin, B; Lorenz, K ; Monteiro, T ;
PUBLISHED: 2011, SOURCE: Spring Meeting of the European-Materials-Research-Society (E-MRS) in OPTICAL MATERIALS, VOLUME: 33, ISSUE: 7
AUTHORS: Peres, M; Magalhaes, S; Rodrigues, J; Soares, MJ ; Fellmann, V; Neves, AJ ; Alves, E ; Daudin, B; Lorenz, K ; Monteiro, T ;
PUBLISHED: 2011, SOURCE: Spring Meeting of the European-Materials-Research-Society (E-MRS) in OPTICAL MATERIALS, VOLUME: 33, ISSUE: 7
23
TITLE: Radiation damage formation and annealing in GaN and ZnO
AUTHORS: Lorenz, K ; Peres, M; Franco, N; Marques, JG ; Miranda, SMC; Magalhaes, S; Monteiro, T ; Wesch, W; Alves, E ; Wendler, E;
PUBLISHED: 2011, SOURCE: Conference on Oxide-based Materials and Devices II in OXIDE-BASED MATERIALS AND DEVICES II, VOLUME: 7940
AUTHORS: Lorenz, K ; Peres, M; Franco, N; Marques, JG ; Miranda, SMC; Magalhaes, S; Monteiro, T ; Wesch, W; Alves, E ; Wendler, E;
PUBLISHED: 2011, SOURCE: Conference on Oxide-based Materials and Devices II in OXIDE-BASED MATERIALS AND DEVICES II, VOLUME: 7940
INDEXED IN: 
Scopus 
WOS
Scopus WOS24
TITLE: Functionalizing self-assembled GaN quantum dot superlattices by Eu-implantation Full Text
AUTHORS: Magalhaes, S; Peres, M; Fellmann, V; Daudin, B; Neves, AJ ; Alves, E ; Monteiro, T ; Lorenz, K ;
PUBLISHED: 2010, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 108, ISSUE: 8
AUTHORS: Magalhaes, S; Peres, M; Fellmann, V; Daudin, B; Neves, AJ ; Alves, E ; Monteiro, T ; Lorenz, K ;
PUBLISHED: 2010, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 108, ISSUE: 8
INDEXED IN: Scopus WOS
Scopus WOS25
TITLE: High temperature annealing of Europium implanted AlN Full Text
AUTHORS: Lorenz, K ; Magalhaes, S; Alves, E ; Peres, M; Monteiro, T ; Neves, AJ ; Bockowski, M;
PUBLISHED: 2010, SOURCE: 15th International Conference of the Radiation Effects in Insulators in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 268, ISSUE: 19
AUTHORS: Lorenz, K ; Magalhaes, S; Alves, E ; Peres, M; Monteiro, T ; Neves, AJ ; Bockowski, M;
PUBLISHED: 2010, SOURCE: 15th International Conference of the Radiation Effects in Insulators in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 268, ISSUE: 19
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TITLE: Effect of annealing on AlN/GaN quantum dot heterostructures: Advanced ion beam characterization and X-ray study of low-dimensional structures Full Text
AUTHORS: Magalhaes, S; Lorenz, K ; Franco, N; Barradas, NP ; Alves, E ; Monteiro, T ; Amstatt, B; Fellmann, V; Daudin, B;
PUBLISHED: 2010, SOURCE: 7th International Symposium on Atomic Level Characterizations for New Materials and Devices in SURFACE AND INTERFACE ANALYSIS, VOLUME: 42, ISSUE: 10-11
AUTHORS: Magalhaes, S; Lorenz, K ; Franco, N; Barradas, NP ; Alves, E ; Monteiro, T ; Amstatt, B; Fellmann, V; Daudin, B;
PUBLISHED: 2010, SOURCE: 7th International Symposium on Atomic Level Characterizations for New Materials and Devices in SURFACE AND INTERFACE ANALYSIS, VOLUME: 42, ISSUE: 10-11
INDEXED IN: Scopus WOS
Scopus WOS27
TITLE: Influence of thermal annealing on the structural and optical properties of GaN/AlN quantum dots Full Text
AUTHORS: Peres, M; Neves, AJ ; Monteiro, T ; Magalhaes, S; Alves, E ; Lorenz, K ; Okuno Vila, H; Fellmann, V; Bougerol, C; Daudin, B;
PUBLISHED: 2010, SOURCE: E-MRS Fall Meeting on Wide Band Gap II-VI and III-V Semiconductors in PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, VOLUME: 247, ISSUE: 7
AUTHORS: Peres, M; Neves, AJ ; Monteiro, T ; Magalhaes, S; Alves, E ; Lorenz, K ; Okuno Vila, H; Fellmann, V; Bougerol, C; Daudin, B;
PUBLISHED: 2010, SOURCE: E-MRS Fall Meeting on Wide Band Gap II-VI and III-V Semiconductors in PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, VOLUME: 247, ISSUE: 7
28
TITLE: Al1-xInxN/GaN bilayers: Structure, morphology, and optical properties Full Text
AUTHORS: Lorenz, K ; Magalhaes, S; Franco, N; Barradas, NP ; Darakchieva, V; Alves, E ; Pereira, S ; Correia, MR ; Munnik, F; Martin, RW; O'Donnell, KP; Watson, IM;
PUBLISHED: 2010, SOURCE: E-MRS Fall Meeting on Wide Band Gap II-VI and III-V Semiconductors in PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, VOLUME: 247, ISSUE: 7
AUTHORS: Lorenz, K ; Magalhaes, S; Franco, N; Barradas, NP ; Darakchieva, V; Alves, E ; Pereira, S ; Correia, MR ; Munnik, F; Martin, RW; O'Donnell, KP; Watson, IM;
PUBLISHED: 2010, SOURCE: E-MRS Fall Meeting on Wide Band Gap II-VI and III-V Semiconductors in PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, VOLUME: 247, ISSUE: 7
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TITLE: Indium kinetics during the plasma-assisted molecular beam epitaxy of semipolar (11-22) InGaN layers Full Text
AUTHORS: Das, A; Magalhaes, S; Kotsar, Y; Kandaswamy, PK; Gayral, B; Lorenz, K ; Alves, E ; Ruterana, P; Monroy, E;
PUBLISHED: 2010, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 96, ISSUE: 18
AUTHORS: Das, A; Magalhaes, S; Kotsar, Y; Kandaswamy, PK; Gayral, B; Lorenz, K ; Alves, E ; Ruterana, P; Monroy, E;
PUBLISHED: 2010, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 96, ISSUE: 18
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TITLE: Optical and Structural Properties of an Eu Implanted Gallium Nitride Quantum Dots/Aluminium Nitride Superlattice
AUTHORS: Peres, M; Neves, AJ ; Monteiro, T ; Magalhaes, S; Franco, N; Lorenz, K ; Alves, E ; Damilano, B; Massies, J; Dussaigne, A; Grandjean, N;
PUBLISHED: 2010, SOURCE: 2nd International Conference on Advanced Nano Materials in JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, VOLUME: 10, ISSUE: 4
AUTHORS: Peres, M; Neves, AJ ; Monteiro, T ; Magalhaes, S; Franco, N; Lorenz, K ; Alves, E ; Damilano, B; Massies, J; Dussaigne, A; Grandjean, N;
PUBLISHED: 2010, SOURCE: 2nd International Conference on Advanced Nano Materials in JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, VOLUME: 10, ISSUE: 4
