Hugo Manuel Brito Águas
AuthID: R-000-61B
141
TITLE: Role of the i layer surface properties on the performance of a-Si:H Schottky barrier photodiodes Full Text
AUTHORS: Águas, H; Fortunato, E; Martins, R;
PUBLISHED: 2002, SOURCE: Sensors and Actuators A: Physical, VOLUME: 99, ISSUE: 1-2
AUTHORS: Águas, H; Fortunato, E; Martins, R;
PUBLISHED: 2002, SOURCE: Sensors and Actuators A: Physical, VOLUME: 99, ISSUE: 1-2
142
TITLE: Thin film metal oxide semiconductors deposited on polymeric substrates
AUTHORS: Fortunato, E; Nunes, P; Marques, A; Costa, D; Aguas, H; Ferreira, I; Costa, MEV; Martins, R;
PUBLISHED: 2001, SOURCE: Transport and Microstructural Phenomena in Oxide Electronics in Materials Research Society Symposium - Proceedings, VOLUME: 666
AUTHORS: Fortunato, E; Nunes, P; Marques, A; Costa, D; Aguas, H; Ferreira, I; Costa, MEV; Martins, R;
PUBLISHED: 2001, SOURCE: Transport and Microstructural Phenomena in Oxide Electronics in Materials Research Society Symposium - Proceedings, VOLUME: 666
INDEXED IN: Scopus
IN MY: ORCID
143
TITLE: Role of ion bombardment on the properties of a-Si:H films Full Text
AUTHORS: Hugo Águas; Martins, R; Fortunato, E;
PUBLISHED: 2001, SOURCE: Vacuum, VOLUME: 60, ISSUE: 1-2
AUTHORS: Hugo Águas; Martins, R; Fortunato, E;
PUBLISHED: 2001, SOURCE: Vacuum, VOLUME: 60, ISSUE: 1-2
144
TITLE: Fast and cheap method to qualitatively measure the thickness and uniformity of ZrO2 thin films Full Text
AUTHORS: Hugo Águas; António Marques; Rodrigo Martins; Elvira Fortunato;
PUBLISHED: 2001, SOURCE: Materials Science in Semiconductor Processing, VOLUME: 4, ISSUE: 1-3
AUTHORS: Hugo Águas; António Marques; Rodrigo Martins; Elvira Fortunato;
PUBLISHED: 2001, SOURCE: Materials Science in Semiconductor Processing, VOLUME: 4, ISSUE: 1-3
145
TITLE: Influence of the Plasma Regime on the Structural, Optical, Electrical and Morphological Properties of a-Si:H Thin Films
AUTHORS: Hugo Águas; Rodrigo Martins; Yuri Nunes ; Manuel J.P Maneira; Elvira Fortunato;
PUBLISHED: 2001, SOURCE: Materials Science Forum, VOLUME: 382
AUTHORS: Hugo Águas; Rodrigo Martins; Yuri Nunes ; Manuel J.P Maneira; Elvira Fortunato;
PUBLISHED: 2001, SOURCE: Materials Science Forum, VOLUME: 382
146
TITLE: Plasma diagnostics of a PECVD system using different R.F. electrode configurations Full Text
AUTHORS: Águas, H; Martins, R; Fortunato, E;
PUBLISHED: 2000, SOURCE: Vacuum, VOLUME: 56, ISSUE: 1
AUTHORS: Águas, H; Martins, R; Fortunato, E;
PUBLISHED: 2000, SOURCE: Vacuum, VOLUME: 56, ISSUE: 1
147
TITLE: Study of the effect of different plasma-enhanced chemical vapour deposition reactor configurations on the properties of hydrogenated amorphous silicon thin films Full Text
AUTHORS: Aguas, V. Silva, I. Ferreira, E. Fo, H;
PUBLISHED: 2000, SOURCE: Philosophical Magazine B, VOLUME: 80, ISSUE: 4
AUTHORS: Aguas, V. Silva, I. Ferreira, E. Fo, H;
PUBLISHED: 2000, SOURCE: Philosophical Magazine B, VOLUME: 80, ISSUE: 4
148
TITLE: Study of the effect of different plasma-enhanced chemical vapour deposition reactor configurations on the properties of hydrogenated amorphous silicon thin films Full Text
AUTHORS: águas H.; Silva V.; Ferreira I.; Fortunato E.; Martins R.;
PUBLISHED: 2000, SOURCE: Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties, VOLUME: 80, ISSUE: 4
AUTHORS: águas H.; Silva V.; Ferreira I.; Fortunato E.; Martins R.;
PUBLISHED: 2000, SOURCE: Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties, VOLUME: 80, ISSUE: 4
149
TITLE: Performances of nano/amorphous silicon films produced by hot wire plasma assisted technique
AUTHORS: Ferreira, I; Aguas, H; Mendes, L; Fernandes, F ; Fortunato, E; Martins, R;
PUBLISHED: 1998, SOURCE: Symposium on Amorphous and Microcrystalline Silicon Technology-1998, at the MRS Spring Meeting in AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY-1998, VOLUME: 507
AUTHORS: Ferreira, I; Aguas, H; Mendes, L; Fernandes, F ; Fortunato, E; Martins, R;
PUBLISHED: 1998, SOURCE: Symposium on Amorphous and Microcrystalline Silicon Technology-1998, at the MRS Spring Meeting in AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY-1998, VOLUME: 507
INDEXED IN: WOS
IN MY: ResearcherID
150
TITLE: Influence of the H-2 dilution and filament temperature on the properties of P doped silicon carbide thin films produced by hot-wire technique
AUTHORS: Ferreira, I; Aguas, H; Mendes, L; Fernandes, F; Fortunato, E; Cenimat, RM;
PUBLISHED: 1998, SOURCE: Symposium on Amorphous and Microcrystalline Silicon Technology-1998, at the MRS Spring Meeting in AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY-1998, VOLUME: 507
AUTHORS: Ferreira, I; Aguas, H; Mendes, L; Fernandes, F; Fortunato, E; Cenimat, RM;
PUBLISHED: 1998, SOURCE: Symposium on Amorphous and Microcrystalline Silicon Technology-1998, at the MRS Spring Meeting in AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY-1998, VOLUME: 507
INDEXED IN: WOS
IN MY: ResearcherID