121
TITLE: High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: Growth conditions, strain relaxation, and In incorporation kinetics  Full Text
AUTHORS: Valdueza Felip, S; Bellet Amalric, E; Nunez Cascajero, A; Wang, Y; P Chauvat; Ruterana, P; Pouget, S; Lorenz, K; Alves, E; Monroy, E;
PUBLISHED: 2014, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 116, ISSUE: 23
INDEXED IN: WOS
122
TITLE: Lattice location of Hf and its interaction with other impurities in LiNbO3: an integrated review
AUTHORS: Marques, JG; Lorenz, K;
PUBLISHED: 2014, SOURCE: Annual Conference on Oxide-Based Materials and Devices V held at SPIE Photonics West in OXIDE-BASED MATERIALS AND DEVICES V, VOLUME: 8987
INDEXED IN: Scopus WOS CrossRef
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124
TITLE: Lattice location of Hf and its interaction with other impurities in LiNbO<inf>3</inf>: A review
AUTHORS: Marques, JG; Lorenz, K;
PUBLISHED: 2014, SOURCE: Optical Engineering, VOLUME: 53, ISSUE: 6
INDEXED IN: Scopus
IN MY: ORCID
125
TITLE: High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: Growth conditions, strain relaxation, and In incorporation kinetics  Full Text
AUTHORS: Valdueza-Felip, S; Bellet-Amalric, E; Núñez-Cascajero, A; Wang, Y; M.-P Chauvat; Ruterana, P; Pouget, S; Lorenz, K; Alves, E; Monroy, E;
PUBLISHED: 2014, SOURCE: J. Appl. Phys. - Journal of Applied Physics, VOLUME: 116, ISSUE: 23
INDEXED IN: CrossRef
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126
TITLE: Errata: Lattice location of Hf and its interaction with other impurities in LiNbO3: a review
AUTHORS: José G Marques; Katharina Lorenz;
PUBLISHED: 2014, SOURCE: Optical Engineering - Opt. Eng, VOLUME: 53, ISSUE: 6
INDEXED IN: CrossRef
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127
TITLE: Functional nanowires: Synthesis, characterization and applications
AUTHORS: Bianchi Méndez; Katharina Lorenz; Beatrice Fraboni; Oliver Ambacher;
PUBLISHED: 2014, SOURCE: Physica Status Solidi (C) Current Topics in Solid State Physics, VOLUME: 11, ISSUE: 2
INDEXED IN: Scopus CrossRef
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128
TITLE: Composition and luminescence studies of InGaN epilayers grown at different hydrogen flow rates  Full Text
AUTHORS: Taylor, E; Fang, F; Oehler, F; Edwards, PR; Kappers, MJ; Lorenz, K; Alves, E ; McAleese, C; Humphreys, CJ; Martin, RW;
PUBLISHED: 2013, SOURCE: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, VOLUME: 28, ISSUE: 6
INDEXED IN: Scopus WOS CrossRef
129
TITLE: Enhanced red emission from praseodymium-doped GaN nanowires by defect engineering  Full Text
AUTHORS: Lorenz, K; Nogales, E; Miranda, SMC; Franco, N; Mendez, B; Alves, E ; Tourbot, G; Daudin, B;
PUBLISHED: 2013, SOURCE: ACTA MATERIALIA, VOLUME: 61, ISSUE: 9
INDEXED IN: Scopus WOS CrossRef
130
TITLE: Nanostructures and thin films of transparent conductive oxides studied by perturbed angular correlations  Full Text
AUTHORS: Barbosa, MB; Goncalves, JN ; Redondo Cubero, A ; Miranda, SMC; Simon, R; Kessler, P; Brandt, M; Henneberger, F; Nogales, E; Mendez, B; Johnston, K; Alves, E ; Vianden, R; Araujo, JP ; Lorenz, K; Correia, JG ;
PUBLISHED: 2013, SOURCE: PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, VOLUME: 250, ISSUE: 4
INDEXED IN: Scopus WOS CrossRef: 4
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